Andreia Cathelin - Publications, H-index & Citations

Andreia Cathelin

st microelectronics

36H指数

296论文数

4.1K被引数

收录论文 15

发表时间

Theoretical Analysis and Design of a 22--44-GHz Quasi-Balanced Doherty Power Amplifier With Enhanced Wideband PAE Performance and 3:1 VSWR Tolerance in 28-nm FD-SOI CMOS 22-44 GHz准平衡杜赫蒂功率放大器的理论分析与设计，具有增强的宽带PAE性能和3:1 VSWR容限，采用28 nm FD-SOI CMOS工艺

IEEE Journal of Solid-State Circuits

IF5.6

2026-02-03

PREAI

Gwennaël Diverrez; Eric Kerhervé; Magali De Matos; Andreia Cathelin

A 220-GHz BiCMOS Wireless Coherent Transmitter Using Free-Running Oscillators and Kramers–Kronig Technique 一种基于自由运行振荡器和Kramers–Kronig技术的220-GHz BiCMOS无线相干发射机

IEEE Transactions on Microwave Theory and Techniques

IF4.5

2025-12-09

PREAI

James Gruber; Zainulabideen Khalifa; Morteza Tavakoli Taba; Lili Chen; Andreia Cathelin; Ehsan Afshari

Effect of PN passivation on MOSFETs performance in 28 nm FD-SOI☆PN钝化对28 nm FD-SOI MOSFETs性能的影响☆

SOLID-STATE ELECTRONICS

IF1.4

2025-11-01

PREAI

Vanbrabant, M.; Rack, M.; Cathelin, A.; Raskin, J. P.; Kilchytska, V.

Design-Oriented Single-Piece Explicit I-V DC Charge-Based Model for MOS Transistors in Nanometric Technologies

IEEE ACCESS

IF3.6

2024-01-01

OAAI

Poupon, Julien; Barragan, Manuel J.; Cathelin, Andreia; Bourdel, Sylvain

Design-Oriented Single-Piece 5-DC-Parameter MOSFET Model

IEEE ACCESS

IF3.6

2024-01-01

OAAI

Alves Neto, Deni Germano; Bouchoucha, Mohamed Khalil; Maranhao, Gabriel; Barragan, Manuel J.; Schneider, Marcio Cherem; Cathelin, Andreia; Bourdel, Sylvain; Galup-Montoro, Carlos

Integration of an ultra-fast active quenching circuit with a monolithic 3D SPAD pixel in a 28 nm FD-SOI CMOS technology 在28 nm fd-soi CMOS技术中将超快有源淬火电路与单片3D SPAD像素集成在一起

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2023-12-01

PREAI

Lakeh, Mohammadreza Dolatpoor; Kammerer, Jean-Baptiste; Schell, Jean-Baptiste; Issartel, Dylan; Gao, Shaochen; Cathelin, Andreia; Dartigues, Alexandre; Calmon, Francis; Uhring, Wilfried

Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge (vol 10, pg 86270, 2022)

IEEE ACCESS

IF3.6

2023-01-01

OAAI

Pino-Monroy, Dayana A.; Scheer, Patrick; Bouchoucha, Mohamed Khalil; Galup-Montoro, Carlos; Barragan, Manuel J.; Cathelin, Philippe; Fournier, Jean-Michel; Cathelin, Andreia; Bourdel, Sylvain

Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge

IEEE ACCESS

IF3.6

2022-01-01

OAAI

Pino-Monroy, Dayana A.; Scheer, Patrick; Bouchoucha, Mohamed Khalil; Galup-Montoro, Carlos; Barragan, Manuel J.; Cathelin, Philippe; Fournier, Jean-Michel; Cathelin, Andreia; Bourdel, Sylvain

Impact of Forward Body-Biasing on Ultra-Low Voltage Switched-Capacitor RF Power Amplifier in 28 nm FD-SOI

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2022-01-01