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Diffraction order enhanced multi-diffraction order utilization overlay error metrology method

delete2025-04-24
delete0
PRE
AI
S
Shaoyu Liu
Y
Yan Tang
X
Xiaolong Cheng
Y
Yuliang Long
J
Jinfeng Jiang
H
He Yu *
L
Lixin Zhao
DOI：10.1088/1361-6501/adce21delete
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摘要

摘要

En 中文
光刻中的套刻误差是指两次曝光图案之间的位置偏差，是评价光刻质量的关键指标之一。传统的套刻测量方法受高阶衍射能量强度的限制，主要依赖+/-1阶衍射光进行测量，因此易受标记结构变化的影响。本项目提出一种利用多阶衍射的衍射阶数增强型套刻误差测量方法。首先，采用标量衍射理论推导增强光栅衍射效率的方法，并解释高阶衍射的优势；随后，利用严格耦合波分析（RCWA）算法模拟优化的套刻（OVL）标记，验证设计的有效性。该方法能够弥补因测量误差过大而难以使用某些波长的问题，在实现亚纳米精度的同时降低对偏振方向的敏感性。通过采用共享多阶衍射的方法，可纠正仅使用+/-1阶时无法处理的情形，为基于多波长衍射的套刻技术提供更多工艺选项。本研究提出了一种巧妙的标记优化方法，使实践者能够针对不同产品批次进行更灵活的选择，从而提升套刻测量的准确性和稳健性。
Keyword:
lithography
diffraction-based overlay
optical metrology
OVL-mark optimization

期刊

Measurement Science and Technology 封面图
Measurement Science and Technology
IF:
3.4
论文数:
2.6K
被引数:
2.3W

机构

C
chinese acad sci
学者数:
1.8W
论文数: 1.1W
被引数: 4.6K
引用论文

引用论文

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