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Learning Abilities Achieved by a Single Solid-State Atomic Switch
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DOI：10.1002/adma.200903680.png)
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摘要
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Learning abilities are demonstrated using a single solid-state atomic switch, wherein the formation and dissolution of a metal filament are controlled depending on the history of prior switching events. The strength of the memorization level gradually increases when the number of input signals is increased. Once the filament forms a bridge, electrons flow in a ballistic mode and long-term memorization is achieved (see figure).
Keyword:
ELECTROCHEMICAL REACTION
MEMORIES
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26.8
论文数:
3.4W
被引数:
46.0W
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