Takeo Ohno - Publications, H-index & Citations

Takeo Ohno

tohoku university

16H指数

110论文数

3.0K被引数

收录论文 17

发表时间

Film-Nanostructure-Controlled Inerasable-to-Erasable Switching Transition in ZnO-Based Transparent Memristor Devices: Sputtering-Pressure Dependency

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2019-10-31

PREAI

Simanjuntak, Firman Mangasa; Ohno, Takeo; Samukawa, Seiji

Atomic switches: atomic-movement-controlled nanodevices for new types of computing

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

IF6.9

2019-07-08

OAAI

Hino, Takami; Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru; Nayak, Alpana; Ohno, Takeo; Aono, Masakazu

Neutral Oxygen Beam Treated ZnO-Based Resistive Switching Memory Device

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2018-12-25

PREAI

Simanjuntak, Firman Mangasa; Ohno, Takeo; Samukawa, Seiji

Current-induced magnetization switching using an electrically insulating spin-torque generator

SCIENCE ADVANCES

IF12.5

2018-02-02

OAAI

An, Hongyu; Ohno, Takeo; Kanno, Yusuke; Kageyama, Yuito; Monnai, Yasuaki; Maki, Hideyuki; Shi, Ji; Ando, Kazuya

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

IF6.9

2016-01-12

OAAI

Ohno, Takeo; Oyama, Yutaka

Al and Ge simultaneous oxidation using neutral beam post-oxidation for formation of gate stack structures

APPLIED PHYSICS LETTERS

IF3.6

2015-09-30

PREAI

Ohno, Takeo; Nakayama, Daiki; Samukawa, Seiji

Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

APPLIED PHYSICS LETTERS

IF3.6

2015-04-30

PREAI

Ohno, Takeo; Samukawa, Seiji

Controlling the Synaptic Plasticity of a Cu2S Gap-Type Atomic Switch

ADVANCED FUNCTIONAL MATERIALS

IF19

2012-05-25

165

PREAI

Nayak, Alpana; Ohno, Takeo; Tsuruoka, Tohru; Terabe, Kazuya; Hasegawa, Tsuyoshi; Gimzewski, James K.; Aono, Masakazu

Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch

APPLIED PHYSICS LETTERS

IF3.6

2011-11-16

PREAI

Ohno, Takeo; Hasegawa, Tsuyoshi; Nayak, Alpana; Tsuruoka, Tohru; Gimzewski, James K.; Aono, Masakazu

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses 在单个无机突触中模拟的短期可塑性和长期增强

NATURE MATERIALS

IF38.5

2011-06-26

1.5K

PREAI

Ohno, Takeo; Hasegawa, Tsuyoshi; Tsuruoka, Tohru; Terabe, Kazuya; Gimzewski, James K.; Aono, Masakazu

Learning Abilities Achieved by a Single Solid-State Atomic Switch

ADVANCED MATERIALS

IF26.8

2010-04-21

267

OAAI

Hasegawa, Tsuyoshi; Ohno, Takeo; Terabe, Kazuya; Tsuruoka, Tohru; Nakayama, Tomonobu; Gimzewski, James K.; Aono, Masakazu

The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

APPLIED SURFACE SCIENCE

IF6.9

2006-07-01

PREAI

Ohno, Takeo; Oyama, Yutaka; Nishizawa, Jun-ichi

Effects of AsH3 surface treatment for the improvement of ultrashallow area-selective regrown GaAs sidewall tunnel junction

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2004-01-01

PREAI

Oyama, Y; Ohno, T; Suto, K; Nishizawa, J

Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2003-10-01

PREAI

Ohno, T; Oyama, Y; Suto, K; Nishizawa, J

Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2003-10-01

PREAI

Ohno, T; Oyama, Y; Suto, K; Nishizawa, J

Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions

APPLIED SURFACE SCIENCE

IF6.9

2003-06-01

PREAI

Ohno, T; Oyama, Y; Tezuka, K; Suto, K; Nishizawa, J

Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions

APPLIED PHYSICS LETTERS

IF3.6

2002-09-30

PREAI

Oyama, Y; Ohno, T; Tezuka, K; Suto, K; Nishizawa, J

研究方向