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Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application
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DOI：10.1002/smll.201800945.png)
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摘要
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Transient memristors are prospective candidates for both secure memory systems and biointegrated electronics, which are capable to physically disappear at a programmed time with a triggered operation. However, the sneak current issue has been a considerable obstacle to achieve high-density transient crossbar array of memristors. To solve this problem, it is necessary to develop a transient switch device to turn the memory device on and off controllably. Here, a dissolvable and flexible threshold switching (TS) device with a vertically crossed structure is introduced, which exhibits a high selectivity of 10(7), steep turn-on slope of <8 mV dec(-1), and fast ON/OFF switch speed within 50/25 ns. Triggered failure could be achieved after soaking the device in deionized water for 8 min at room temperature. Furthermore, a water-assisted transfer printing method is used to fabricate flexible and transient TS device arrays for bioresorbable systems, in which none of any significant degradation is observed under a bending radius of 2 mm. Integrating the selector with a transient memristor is capable of 10(7) Gb memory implementation, indicating that the transient TS device could provide great opportunities to achieve highly integrated transient memory arrays.
Keyword:
flexible electronics
memristors
physically transient
secure electronics
threshold switching (TS) devices
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