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Programmable Threshold Logic Implementations in a Memristor Crossbar Array
DOI:10.1021/acs.nanolett.3c04073.png)
摘要
En 中文
In this study, we demonstrate the implementation of programmable threshold logics using a 32 x 32 memristor crossbar array. Thanks to forming-free characteristics obtained by the annealing process, its accurate programming characteristics are presented by a 256-level grayscale image. By simultaneous subtraction between weighted sum and threshold values with a differential pair in an opposite way, 3-input and 4-input Boolean logics are implemented in the crossbar without additional reference bias. Also, we verify a full-adder circuit and analyze its fidelity, depending on the device programming accuracy. Lastly, we successfully implement a 4-bit ripple carry adder in the crossbar and achieve reliable operations by read-based logic operations. Compared to stateful logic driven by device switching, a 4-bit ripple carry adder on a memristor crossbar array can perform more reliably in fewer steps thanks to its read-based parallel logic operation.
Keyword:
memristors
neuromorphic
computing-in-memory
threshold logic
full adder
期刊
IF:
9.1
论文数:
2.7W
被引数:
16.5W
机构
引用论文
Resistive Random Access Memory (ReRAM) Based on Metal Oxides基于金属氧化物的电阻式随机存取存储器 (ReRAM)
PROCEEDINGS OF THE IEEE
IF25.9
Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits
ADVANCED MATERIALS
IF26.8
Memristor Crossbar Circuit for Ternary Content-Addressable Memory with Fine-Tuning Operation具有微调操作的三元内容可寻址存储器的忆阻器交叉电路

