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Programmable Threshold Logic Implementations in a Memristor Crossbar Array

delete2024-03-12
delete7
PRE
AI
S
Sangwook Youn
J
Jungjin Lee
S
Sungjoon Kim
J
Jinwoo Park
K
Kyuree Kim
H
Hyungjin Kim *
DOI:10.1021/acs.nanolett.3c04073delete
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摘要

摘要

En 中文
In this study, we demonstrate the implementation of programmable threshold logics using a 32 x 32 memristor crossbar array. Thanks to forming-free characteristics obtained by the annealing process, its accurate programming characteristics are presented by a 256-level grayscale image. By simultaneous subtraction between weighted sum and threshold values with a differential pair in an opposite way, 3-input and 4-input Boolean logics are implemented in the crossbar without additional reference bias. Also, we verify a full-adder circuit and analyze its fidelity, depending on the device programming accuracy. Lastly, we successfully implement a 4-bit ripple carry adder in the crossbar and achieve reliable operations by read-based logic operations. Compared to stateful logic driven by device switching, a 4-bit ripple carry adder on a memristor crossbar array can perform more reliably in fewer steps thanks to its read-based parallel logic operation.
Keyword:
memristors
neuromorphic
computing-in-memory
threshold logic
full adder

期刊

Nano Letters 封面图
Nano Letters
IF:
9.1
论文数:
2.7W
被引数:
16.5W

机构

H
hanyang university
学者数:
2.9W
论文数: 2.7W
被引数: 36
I
Inha University
学者数:
1.1W
论文数: 1.1W
被引数: 1.1W
S
seoul national university (snu)
学者数:
7.2W
论文数: 6.6W
被引数: 86
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