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S

Sangwook Youn

hanyang university

13H指数
46论文数
344被引数
收录论文 16
发表时间
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Ultra-Low-Energy Physical Unclonable Function Enabled by Trap-Engineered Ferroelectric Tunnel Junction Crossbar基于陷阱工程铁电隧穿结交叉阵列的超低能耗物理不可克隆函数
errNano Energy
IF17.1
err2026-03-10
err0
PREAI
errSangwook Youn; Hwiho Hwang; Hyungjin Kim
err分享
err收藏
ZrO2 seed layer effects on switching characteristics and low-frequency noise in HZO ferroelectric tunnel junction arraysZrO2种子层对HZO铁电隧穿结阵列的开关特性及低频噪声的影响
errJournal of Alloys and Compounds
IF6.3
err2025-12-19
err0
PREAI
errSangwook Youn; Hwiho Hwang; Hyungjin Kim
err分享
err收藏
Ferroelectric Tunnel Junction Memristor Crossbar Array with Annealing Optimization for In-Memory Computing
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2025-12-01
err0
errOAAI
errYoun, Sangwook; Hwang, Hwiho; Kim, Hyungjin
err分享
err收藏
Organic electrolyte-gated synaptic transistors with finely tunable 14-bit states based on ion concentration tailoring基于离子浓度调整的具有精细可调14位状态的有机电解质门控突触晶体管
errDevice
IF8
err2025-12-01
err1
PREAI
errKim, Donguk; Pyo, Won Jun; Youn, Sangwook; So, Jaehee; Kim, Youngseok; Kim, Hyungjin; Kim, Felix Sunjoo
err分享
err收藏
Energy-Efficient Ising Solver Implementations in Forming-Free Memristor Crossbar Arrays for Combinatorial Optimization Problems用于组合优化问题的自形成免忆阻器交叉阵列中的节能伊辛求解器实现
errNano Energy
IF17.1
err2025-11-30
err0
PREAI
errSangwook Youn; Kyuree kim; Jinwoo Park; Hyungjin Kim
err分享
err收藏
Recent advances in ferroelectric materials, devices, and in-memory computing applications铁电材料、器件及存内计算应用的最新进展
errNano Convergence
IF11
err2025-11-06
err0
errOAAI
errHwiho Hwang; Sangwook Youn; Hyungjin Kim
err分享
err收藏
Step-Efficient Parallel Implementation of n-bit Full Adders Using Stateful Logic in Memristor Crossbar Arrays基于忆阻器交叉阵列的有状态逻辑n位全加器的步效并行实现
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2025-10-01
err0
errOAAI
errPark, Jinwoo; Lee, Jungjin; Youn, Sangwook; Kim, Hyungjin
err分享
err收藏
Configurable Kernel Map Implementation in Memristor Crossbar for Convolution Neural Network基于忆阻器交叉阵列的可配置核映射实现用于卷积神经网络
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2025-05-15
err0
errOAAI
errKim, G; Youn, S; Park, J; Kim, H
err分享
err收藏
2C-Ternary Content Addressable Memory in Memcapacitor Crossbar Array with NAND Flash Structure2C-三元内容寻址存储器在具有NAND闪存结构的忆容阵列中
errSMALL
IF12.1
err2025-02-05
err0
PREAI
errHwang, Hwiho; Yu, Junsu; Youn, Sangwook
err分享
err收藏
Threshold learning algorithm for memristive neural network with binary switching behavior
errNEURAL NETWORKS
IF6.3
err2024-08-01
err1
PREAI
errYoun, Sangwook; Hwang, Yeongjin; Kim, Tae-Hyeon; Kim, Sungjoon; Hwang, Hwiho; Park, Jinwoo; Kim, Hyungjin
err分享
err收藏
Memristor Crossbar Array with Enhanced Device Yield for In-Memory Vector-Matrix Multiplication具有增强的器件良率的忆阻器交叉阵列，用于内存中矢量矩阵乘法
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-05-30
err3
PREAI
errKim, Tae-Hyeon; Kim, Sungjoon; Park, Jinwoo; Youn, Sangwook; Kim, Hyungjin
err分享
err收藏
Overshoot-Suppressed Memristor Crossbar Array with High Yield by AlOx Oxidation for Neuromorphic System
errADVANCED MATERIALS TECHNOLOGIES
IF6.2
err2024-04-08
err2
PREAI
errKim, Sungjoon; Park, Kyungchul; Hong, Kyungho; Kim, Tae-Hyeon; Park, Jinwoo; Youn, Sangwook; Kim, Hyungjin; Choi, Woo Young
err分享
err收藏
Programmable Threshold Logic Implementations in a Memristor Crossbar Array忆阻器交叉阵列中的可编程阈值逻辑实现
errNANO LETTERS
IF9.1
err2024-03-12
err7
PREAI
errYoun, Sangwook; Lee, Jungjin; Kim, Sungjoon; Park, Jinwoo; Kim, Kyuree; Kim, Hyungjin
err分享
err收藏
Implementation of Convolutional Neural Networks in Memristor Crossbar Arrays with Binary Activation and Weight Quantization具有二进制激活和权重量化的忆阻器交叉阵列中卷积神经网络的实现
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-01-01
err15
PREAI
errPark, Jinwoo; Kim, Sungjoon; Song, Min Suk; Youn, Sangwook; Kim, Kyuree; Kim, Tae-Hyeon; Kim, Hyungjin
err分享
err收藏
Multibit, Lead-Free Cs2SnI6 Resistive Random Access Memory with Self-Compliance for Improved Accuracy in Binary Neural Network Application多位无铅Cs2SnI6电阻式随机存取存储器，具有自顺应性，可提高二进制神经网络应用的准确性
errADVANCED FUNCTIONAL MATERIALS
IF19
err2023-12-28
err3
PREAI
errKumar, Ajit; Krishnaiah, Mokurala; Park, Jinwoo; Mishra, Dhananjay; Dash, Bidyashakti; Jo, Hyeon-Bin; Lee, Geun; Youn, Sangwook; Kim, Hyungjin; Jin, Sung Hun
err分享
err收藏
Memristor Crossbar Circuit for Ternary Content-Addressable Memory with Fine-Tuning Operation具有微调操作的三元内容可寻址存储器的忆阻器交叉电路
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2023-01-19
err8
errOAAI
errYoun, Sangwook; Kim, Sungjoon; Kim, Tae-Hyeon; Park, Jinwoo; Kim, Hyungjin
err分享
err收藏

研究方向

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合作学者
合作期刊
F
Felix Sunjoo Kim
H 指数: 43 · 论文数: 126
H
Hyungjin Kim
H 指数: 40 · 论文数: 395
J
Jinwoo Park
H 指数: 38 · 论文数: 237
J
Jin‐Woo Park
H 指数: 34 · 论文数: 178
H
Hyungjin Kim
H 指数: 30 · 论文数: 134
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