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Te-based chalcogenide materials for selector applications
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DOI：10.1038/s41598-017-08251-z.png)
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摘要
En 中文
The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory arrays, can be achieved with an appropriate selector for correct information storage and retrieval. Ovonic threshold switches (OTS) based on chalcogenide materials are a strong candidate, but their low thermal stability is one of the key factors that prevents rapid adoption by emerging resistive switching memory technologies. A previously developed map for phase change materials is expanded and improved for OTS materials. Selected materials from different areas of the map, belonging to binary Ge-Te and Si-Te systems, are explored. Several routes, including Si doping and reduction of Te amount, are used to increase the crystallization temperature. Selector devices, with areas as small as 55 x 55 nm(2), were electrically assessed. Sub-threshold conduction models, based on Poole-Frenkel conduction mechanism, are applied to fresh samples in order to extract as-processed material parameters, such as trap height and density of defects, tailoring of which could be an important element for designing a suitable OTS material. Finally, a glass transition temperature estimation model is applied to Te-based materials in order to predict materials that might have the required thermal stability. A lower average number of p-electrons is correlated with a good thermal stability.
Keyword:
GLASS-TRANSITION TEMPERATURES
BIPOLAR RRAM SELECTOR
CRYSTALLIZATION BEHAVIOR
AMORPHOUS-CHALCOGENIDE
THRESHOLD
ALLOYS
SWITCHES
DEVICE
DIODE
FILMS
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期刊
IF:
3.9
论文数:
27.8W
被引数:
83.5W
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Complementary resistive switches for passive nanocrossbar memories用于无源nanocrossbar存储器的互补电阻开关.png)
NATURE MATERIALS
NATURE MATERIALSIF38.5
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