Karl Opsomer - Publications, H-index & Citations

Karl Opsomer

imec, 3001 leuven, belgium

28H指数

173论文数

3.5K被引数

收录论文 33

发表时间

Study of the temperature dependent trap-dominated conduction in GeSe and GeSe2 Ovonic threshold switching selectors 研究GeSe和GeSe2奥弗休斯阈值开关选择器的温度依赖性陷阱主导传导

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-10-07

OAAI

Keukelier, Jonas; Van Dyck, Seppe; Devulder, Wouter; Opsomer, Karl; Detavernier, Christophe

Study of SiGeAsTe and SiGeAsSe chalcogenide thin films by Raman spectroscopy and understanding of their OTS properties

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2024-11-01

PREAI

Keukelier, Jonas; Devulder, Wouter; Sergeant, Stefanie; Nuytten, Thomas; Meersschaut, Johan; Opsomer, Karl; Detavernier, Christophe

Properties of ultrathin molybdenum films for interconnect applications

MATERIALIA

IF2.9

2022-08-01

OAAI

Founta, Valeria; Soulie, Jean-Philippe; Sankaran, Kiroubanand; Vanstreels, Kris; Opsomer, Karl; Morin, Pierre; Lagrain, Pieter; Franquet, Alexis; Vanhaeren, Danielle; Conard, Thierry; Meersschaut, Johan; Detavernier, Christophe; Van de Vondel, Joris; De Wolf, Ingrid; Pourtois, Geoffrey; Tokei, Zsolt; Swerts, Johan; Adelmann, Christoph

Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2 (vol 35, pg 151, 2020)

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-01

OAAI

Keukelier, Jonas; Opsomer, Karl; Nuytten, Thomas; Sergeant, Stefanie; Devulder, Wouter; Clima, Sergiu; Goux, Ludovic; Kar, Gouri Sankar; Detavernier, Christophe

Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-01

OAAI

Keukelier, Jonas; Opsomer, Karl; Nuytten, Thomas; Sergeant, Stefanie; Devulder, Wouter; Clima, Sergiu; Goux, Ludovic; Kar, Gouri Sankar; Detavernier, Christophe

Selective electroless deposition of cobalt using amino-terminated SAMs

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2019-01-01

PREAI

Zyulkov, Ivan; Armini, Silvia; Opsomer, Karl; Detavernier, Christophe; De Gendt, Stefan

Influence of the Chalcogen Element on the Filament Stability in Culn(Te,Se,S)2/Al2O3 Filamentary Switching Devices

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-04-13

PREAI

Ahmad, Tareq; Devulder, Wouter; Opsomer, Karl; Minjauw, Matthias; Celano, Umberto; Hantschel, Thomas; Vandervorst, Wilfried; Goux, Ludovic; Kar, Gouri Sankar; Detavernier, Christophe

Te-based chalcogenide materials for selector applications

SCIENTIFIC REPORTS

IF3.9

2017-08-14

140

OAAI

Velea, A.; Opsomer, K.; Devulder, W.; Dumortier, J.; Fan, J.; Detavernier, C.; Jurczak, M.; Govoreanu, B.

Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-09-21

105

PREAI

Wen, Liang Gong; Roussel, Philippe; Pedreira, Olalla Varela; Briggs, Basoene; Groven, Benjamin; Dutta, Shibesh; Popovici, Mihaela I.; Heylen, Nancy; Ciofi, Ivan; Vanstreels, Kris; Osterberg, Frederik W.; Hansen, Ole; Petersen, Dirch H.; Opsomer, Karl; Detavernie, Christophe; Wilson, Christopher J.; Van Elshocht, Sven; Croes, Kristof; Bommels, Jurgen; Tokei, Zsolt; Adelmann, Christoph

Electronic properties of manganese impurities in germanium

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2015-03-25

OAAI

Lauwaert, J.; Segers, S. H.; Moens, F.; Opsomer, K.; Clauws, P.; Callens, F.; Simoen, E.; Vrielinck, H.

Improved thermal stability and retention properties of Cu-Te based CBRAM by Ge alloying

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2015-01-01

PREAI

Devulder, Wouter; Opsomer, Karl; Rampelberg, Geert; De Schutter, Bob; Devloo-Casier, Kilian; Jurczak, Malgorzata; Goux, Ludovic; Detavernier, Christophe

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices 纳米尺度电阻式存储器件中导电细丝的三维观察

NANO LETTERS

IF9.1

2014-04-10

303

PREAI

Celano, Umberto; Goux, Ludovic; Belmonte, Attilio; Opsomer, Karl; Franquet, Alexis; Schulze, Andreas; Detavernier, Christophe; Richard, Olivier; Bender, Hugo; Jurczak, Malgorzata; Vandervorst, Wilfried

Growth evolution and characterization of ultra-thin CoGe2 films synthesized via a catalytic solid-vapour reaction technique

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2014-01-01

PREAI

Peter, Antony Premkumar; Opsomer, Karl; Adelmann, Christoph; van Ammel, Annemie; Meersschaut, Johan; Moussa, Alain; Schaekers, Marc; Wen, Liang Gong; Zsolt, Tokei; Van Elshocht, Sven

Ultrathin NiGe Films Prepared via Catalytic Solid-Vapor Reaction of Ni with GeH4

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2013-09-19

PREAI

Peter, Antony P.; Opsomer, Karl; Adelmann, Christoph; Schaekers, Marc; Meersschaut, Johan; Richard, Olivier; Vaesen, Inge; Moussa, Alain; Franquet, Alexis; Zsolt, Tokei; Van Elshocht, Sven

Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2013-07-17

OAAI

Devulder, Wouter; Opsomer, Karl; Seidel, Felix; Belmonte, Attilio; Muller, Robert; De Schutter, Bob; Bender, Hugo; Vandervorst, Wilfried; Van Elshocht, Sven; Jurczak, Malgorzata; Goux, Ludovic; Detavernier, Christophe

Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2013-01-01

PREAI

Han, Jeong Hwan; Ungur, Elisaveta; Franquet, Alexis; Opsomer, Karl; Conard, Thierry; Moussa, Alain; De Gendt, Stefan; Van Elshocht, Sven; Adelmann, Christoph

Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices

NANOSCALE

IF5.1

2013-01-01

PREAI

Celano, Umberto; Goux, Ludovic; Opsomer, Karl; Belmonte, Attilio; Iapichino, Martina; Detavernier, Christophe; Jurczak, Malgorzata; Vandervorst, Wilfried

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

APPLIED PHYSICS LETTERS

IF3.6

2011-08-01

100

OAAI

Goux, L.; Opsomer, K.; Degraeve, R.; Muller, R.; Detavernier, C.; Wouters, D. J.; Jurczak, M.; Altimime, L.; Kittl, J. A.

Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2011-06-09

PREAI

Adelmann, C.; Swerts, J.; Richard, O.; Conard, T.; Popovici, M.; Meersschaut, J.; Afanas'ev, V. V.; Breuil, L.; Cacciato, A.; Opsomer, K.; Brijs, B.; Tielens, H.; Pourtois, G.; Bender, H.; Jurczak, M.; Van Houdt, J.; Van Elshocht, S.; Kittl, J. A.

Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors

APPLIED PHYSICS LETTERS

IF3.6

2011-05-02

PREAI

Pawlak, M. A.; Kaczer, B.; Kim, M. -S.; Popovici, M.; Swerts, J.; Wang, W. -C.; Opsomer, K.; Favia, P.; Tomida, K.; Belmonte, A.; Govoreanu, B.; Vrancken, C.; Demeurisse, C.; Bender, H.; Afanas'ev, V. V.; Debusschere, I.; Altimime, L.; Kittl, J. A.

研究方向