arrow
返回
B

B. Govoreanu

imec, leuven, belgium

42H指数
234论文数
6.2K被引数
收录论文 16
发表时间
Advances in gate stack development for p-type 2D channel FETs through sacrificial WSe2 bilayer oxidation通过牺牲性WSe2双层氧化实现p型二维通道FET栅堆叠发展的进展
err2026-08-07
err0
errOAAI
errTien Dat Ngo; Goutham Arutchelvan; Sui-An Chou; Zaoyang Lin; Robert K. Grubbs; Souvik Ghosh; Daire Cott; Kaustuv Banerjee; Xiangyu Wu; Ming-Yang Li; Mark J. H. van Dal; Cesar Javier Lockhart de la Rosa; Gouri Sankar Kar; Iuliana P. Radu; Bogdan Govoreanu
err分享
err收藏
err分享
err收藏
Low charge noise quantum dots with industrial CMOS manufacturing
err2024-07-19
err12
errOAAI
errElsayed, A.; Shehata, M. M. K.; Godfrin, C.; Kubicek, S.; Massar, S.; Canvel, Y.; Jussot, J.; Simion, G.; Mongillo, M.; Wan, D.; Govoreanu, B.; Radu, I. P.; Li, R.; Van Dorpe, P.; De Greve, K.
err分享
err收藏
Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification硅片上低损耗 α-钽共面波导谐振器的制备,表征和表面改性
err2024-05-31
err4
errOAAI
errLozano, D. P.; Mongillo, M.; Piao, X.; Couet, S.; Wan, D.; Canvel, Y.; Vadiraj, A. M.; Ivanov, Ts; Verjauw, J.; Acharya, R.; Van Damme, J.; Mohiyaddin, F. A.; Jussot, J.; Gowda, P. P.; Pacco, A.; Raes, B.; van de Vondel, J.; Radu, I. P.; Govoreanu, B.; Swerts, J.; Potocnik, A.; De Greve, K.
err分享
err收藏
Multiplexed superconducting qubit control at millikelvin temperatures with a low-power cryo-CMOS multiplexer
err2023-09-25
err8
PREAI
errAcharya, R.; Brebels, S.; Grill, A.; Verjauw, J.; Ivanov, Ts.; Lozano, D. Perez; Wan, D.; Van Damme, J.; Vadiraj, A. M.; Mongillo, M.; Govoreanu, B.; Craninckx, J.; Radu, I. P.; De Greve, K.; Gielen, G.; Catthoor, F.; Potocnik, A.
err分享
err收藏
Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
err2022-08-09
err25
errOAAI
errVerjauw, J.; Acharya, R.; Van Damme, J.; Ivanov, Ts; Lozano, D. Perez; Mohiyaddin, F. A.; Wan, D.; Jussot, J.; Vadiraj, A. M.; Mongillo, M.; Heyns, M.; Radu, I; Govoreanu, B.; Potocnik, A.
err分享
err收藏
High mobility SiMOSFETs fabricated in a full 300 mm CMOS process
err2021-12-27
err5
errOAAI
errCamenzind, T. N.; Elsayed, A.; Mohiyaddin, F. A.; Li, R.; Kubicek, S.; Jussot, J.; Van Dorpe, P.; Govoreanu, B.; Radu, I; Zumbuehl, D. M.
err分享
err收藏
Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation
err2021-10-29
err13
errOAAI
errPotocnik, Anton; Brebels, Steven; Verjauw, Jeroen; Acharya, Rohith; Grill, Alexander; Wan, Danny; Mongillo, Massimo; Li, Ruoyu; Ivanov, Tsvetan; Van Winckel, Steven; Mohiyaddin, Fahd A.; Govoreanu, Bogdan; Craninckx, Jan; Radu, Iuliana P.
err分享
err收藏
Low dephasing and robust micromagnet designs for silicon spin qubits
err2021-08-30
err15
errOAAI
errDumoulin Stuyck, N., I; Mohiyaddin, F. A.; Li, R.; Heyns, M.; Govoreanu, B.; Radu, I. P.
err分享
err收藏
Te-based chalcogenide materials for selector applications
err2017-08-14
err140
errOAAI
errVelea, A.; Opsomer, K.; Devulder, W.; Dumortier, J.; Fan, J.; Detavernier, C.; Jurczak, M.; Govoreanu, B.
err分享
err收藏
Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks
err2012-07-23
err16
PREAI
errPawlak, M. A.; Swerts, J.; Popovici, M.; Kaczer, B.; Kim, M. -S.; Wang, W. -C.; Tomida, K.; Govoreanu, B.; Delmotte, J.; Afanas'ev, V. V.; Schaekers, M.; Vandervorst, W.; Kittl, J. A.
err分享
err收藏
First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
err2012-03-26
err92
PREAI
errClima, S.; Chen, Y. Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G.
err分享
err收藏
Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device
err2012-03-16
err50
PREAI
errChen, Yang Yin; Pourtois, G.; Adelmann, C.; Goux, L.; Govoreanu, B.; Degreave, R.; Jurczak, M.; Kittl, J. A.; Groeseneken, G.; Wouters, D. J.
err分享
err收藏
Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors
err2011-05-02
err27
PREAI
errPawlak, M. A.; Kaczer, B.; Kim, M. -S.; Popovici, M.; Swerts, J.; Wang, W. -C.; Opsomer, K.; Favia, P.; Tomida, K.; Belmonte, A.; Govoreanu, B.; Vrancken, C.; Demeurisse, C.; Bender, H.; Afanas'ev, V. V.; Debusschere, I.; Altimime, L.; Kittl, J. A.
err分享
err收藏
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
err2010-12-16
err217
PREAI
errGoux, L.; Czarnecki, P.; Chen, Y. Y.; Pantisano, L.; Wang, X. P.; Degraeve, R.; Govoreanu, B.; Jurczak, M.; Wouters, D. J.; Altimime, L.
err分享
err收藏
Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique
err2006-12-01
err0
PREAI
errCrupi, Isodiana; Degraeve, Robin; Govoreanu, Bogdan; Brunco, David P.; Roussel, Philippe; Van Houdt, Jan
err分享
err收藏