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Threshold learning algorithm for memristive neural network with binary switching behavior

delete2024-08-01
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PRE
AI
S
Sangwook Youn
Y
Yeongjin Hwang
T
Tae‐Hyeon Kim
S
Sungjoon Kim
H
Hwiho Hwang
J
Jin‐Woo Park
H
Hyungjin Kim *
DOI:10.1016/j.neunet.2024.106355delete
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摘要

摘要

En 中文
On-chip learning is an effective method for adjusting artificial neural networks in neuromorphic computing systems by considering hardware intrinsic properties. However, it faces challenges due to hardware non-idealities, such as the nonlinearity of potentiation and depression and limitations on fine weight adjustment. In this study, we propose a threshold learning algorithm for a variation-tolerant ternary neural network in a memristor crossbar array. This algorithm utilizes two tightly separated resistance states in memristive devices to represent weight values. The high-resistance state (HRS) and low-resistance state (LRS) defined as read current of <0.1 mu A and > 1 mu A, respectively, were successfully programmed in a 32 x 32 crossbar array, and exhibited half-normal distributions due to the programming method. To validate our approach experimentally, a 64 x 10 single-layer fully connected network were trained in the fabricated crossbar for an 8 x 8 MNIST dataset using the threshold learning algorithm, where the weight value is updated when a gradient determined by backpropagation exceeds a threshold value. Thanks to the large margin between the two states of the memristor, we observed only a 0.42 % drop in classification accuracy compared to the baseline network results. The threshold learning algorithm is expected to alleviate the programming burden and be utilized in variation-tolerant neuromorphic architectures.
Keyword:
Neuromorphic system
Memristor crossbar array
Ternary neural network
Threshold learning algorithm

期刊

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Neural Networks
IF:
6.3
论文数:
8.2K
被引数:
3.0W

机构

K
Korea University
学者数:
3.6W
论文数: 3.8W
被引数: 4.4W
I
Inha University
学者数:
1.1W
论文数: 1.1W
被引数: 1.1W
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