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Wavelength-selective 4H-SiC UV-sensor array
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DOI：10.1016/j.mssp.2018.10.019.png)
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In this work, monolithically integrated wavelength-selective 4H-SiC UV-sensor arrays were manufactured using two photolithography masks and only one implantation sequence demonstrating the potential of the advanced 4H-SiC process technology for the first time. The process technology is described in detail for the fabrication of a 2 x 2 wavelength-sensitive UV-sensor array including two variants with different thicknesses of the p-emitter. The maximum spectral responsivity is 92 mA/W for a wavelength of 300 nm and the devices with a thick p-emitter and 162 mA/W for a wavelength of 290 nm and devices with the thin p-emitter. The corresponding values of the external quantum efficiency are 38%, and 69%, respectively. Furthermore, another UV-sensor characteristic is found evaluating the current difference between both types with a maximum spectral responsivity of 80.2 mA/W at a wavelength of 270 nm.
Keyword:
UV sensor
4H-SiC pin-diode
Wavelength-selective
Photodiode
Ion implantation
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4.6
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1.0W
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2.2W
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