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Erlbacher, Tobias

fraunhofer gesellschaft

0H指数
1论文数
0被引数
收录论文 15
发表时间
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Adjustable Current Limiting Function With a Monolithically Integrated SiC Circuit Breaker Device
err2023-09-01
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errOAAI
errTakamori, Taro; Wada, Keiji; Boettcher, Norman; Erlbacher, Tobias; Saito, Wataru; Nishizawa, Shin-ichi
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Microfabricated albedo insensitive sun position sensor system in silicon carbide with integrated 3D optics and CMOS electronics
err2023-05-01
err6
errOAAI
errRomijn, Joost; Vollebregt, Sten; de Bie, Vincent G.; Middelburg, Luke M.; El Mansouri, Brahim; van Zeijl, Henk W.; May, Alexander; Erlbacher, Tobias; Leijtens, Johan; Zhang, Guoqi; Sarro, Pasqualina M.
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Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology
err2022-10-25
err19
errOAAI
errRomijn, Joost; Vollebregt, Sten; Middelburg, Luke M.; El Mansouri, Brahim; van Zeijl, Henk W.; May, Alexander; Erlbacher, Tobias; Leijtens, Johan; Zhang, Guoqi; Sarro, Pasqualina M.
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Defect reduction in SiC epilayers by different substrate cleaning methods
err2022-03-01
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PREAI
errBaierhofer, D.; Thomas, B.; Staiger, F.; Marchetti, B.; Foerster, C.; Erlbacher, T.
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Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC
err2021-12-22
err1
errOAAI
errKocher, Matthias; Rommel, Mathias; Michalowski, Pawel Piotr; Erlbacher, Tobias
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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
err2020-10-14
err42
errOAAI
errBesendoerfer, Sven; Meissner, Elke; Medjdoub, Farid; Derluyn, Joff; Friedrich, Jochen; Erlbacher, Tobias
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Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K4H-SiC p-i-n二极管用于20.5 K至802 K敏感温度测量的可行性
err2019-04-15
err19
PREAI
errMatthus, Christian D.; Di Benedetto, Luigi; Kocher, Matthias; Bauer, Anton J.; Licciardo, Gian Domenico; Rubino, Alfredo; Erlbacher, Tobias
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Wavelength-selective 4H-SiC UV-sensor array
err2019-02-01
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PREAI
errMatthus, Christian D.; Bauer, Anton J.; Frey, Lothar; Erlbacher, Tobias
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The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM具有浮岛的GaN沟槽栅MOSFET: 高击穿电压和改进的BFOM
err2018-02-01
err7
PREAI
errShen, Lingyan; Mueller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias
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Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation
err2016-06-01
err16
PREAI
errBurenkov, Alex; Matthus, Christian D.; Erlbacher, Tobias
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Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
err2008-06-27
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errOAAI
errYanev, Vasil; Rommel, Mathias; Lemberger, Martin; Petersen, Silke; Amon, Brigitte; Erlbacher, Tobias; Bauer, Anton J.; Ryssel, Heiner; Paskaleva, Albena; Weinreich, Wenke; Fachmann, Christian; Heitmann, Johannes; Schroeder, Uwe
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Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition
err2008-01-01
err7
errOAAI
errErlbacher, Tobias; Jank, Michael P. M.; Ryssel, Heiner; Frey, Lothar; Engl, Reimund; Walter, Andreas; Sezi, Recai; Dehm, Christine
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