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A Dynamic Current Sharing Method for Multichip SiC Power Modules Based on Mutual Couplings
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DOI：10.1109/TCPMT.2026.3652176.png)
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Abstract
En 中文
The dynamic current imbalance in multichip silicon carbide (SiC) power modules originates from parasitic inductance mismatches, creates localized chip overheating, and ultimately compromises the long-term reliability of the power module. The existing optimized method fails to consider the mutual couplings, thus proving inadequate for effectively guiding dynamic current sharing design. In this article, a novel dynamic current sharing method based on the proposed design guideline, which considers mutual inductances, is established to enhance the dynamic current sharing performance. Through response surface analysis, an optimal layout design is developed that reduces the dynamic current imbalance from 98% to merely 5%, achieving near-ideal current distribution. The effectiveness of the proposed approach is rigorously validated through the integrated simulation and experimental characterization.
Keywords:
Silicon carbide
Logic gates
MOSFET
Integrated circuit modeling
Mutual coupling
Inductance
Voltage
Multichip modules
Layout
Equivalent circuits
Dynamic current sharing
layout design
multichip silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)
mutual couplings
Journal
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3
Papers:
230
Citations:
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