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High-resolution X-ray diffraction to probe quantum dot asymmetry
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DOI：10.1016/j.measurement.2023.113451.png)
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Abstract
En 中文
The symmetry of nanostructures forming an active part of optoelectronic devices severely impacts their properties. It is crucial for the design of polarization-insensitive semiconductor optical amplifiers or sources of entangled photon pairs. We show how quantum dot symmetry can be measured, including atomic force microscopy and polarization-resolved spectroscopy. We discuss the drawbacks of the typical approaches for nanostructure symmetry detection and propose a way to determine quantum dot geometrical aspect ratio based on high-resolution X-ray diffraction. The offered method provides a non-destructive insight into crystal lattice disturbances reflecting in-plane quantum dot geometrical aspect ratio.
Keywords:
X-ray diffraction
XRD
Quantum dots
QDs
Geometrical aspect ratio
Edge scan
InAs
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