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Nb Texture Evolution and Interdiffusion in Nb/Si-Layered Systems
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DOI：10.1021/acsami.1c06210.png)
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Abstract
En 中文
In this paper, we present a detailed study on the microstructure evolution and interdiffusion in Nb/Si-layered systems. Interlayer formation during the early stages of growth in sputter-deposited Nb-on-Si and Si-on-Nb bilayer systems is studied in vacuo using a high-sensitivity low-energy ion-scattering technique. An asymmetric intermixing behavior is observed, where the Si-on-Nb interface is similar to 2x thinner than the Nb-on-Si interface, and it is explained by the surface-energy difference between Nb and Si. During Nb-on-Si growth, the crystallization of the Nb layer occurs around 2.1 nm as-deposited Nb thickness with a strong Nb(110)-preferred orientation, which is maintained up to 3.3 nm as-deposited Nb thickness. A further increase in the Nb layer thickness above 3.3 nm results in a polycrystalline microstructure with a reduced degree of texture. High-resolution cross-sectional transmission electron microscopy imaging is performed on Nb/Si multilayers to study the effect of the Nb layer texture on interdiffusion during low-temperature annealing. Nb/Si multilayers with amorphous 2 nm Nb layers and strongly textured 3 nm thick Nb layers, with limited grain-boundary pathways for diffusion, show no observable interdiffusion during annealing at 200 degrees C for 8 h, whereas in a Nb/Si multilayer with polycrystalline 4 nm thick Nb layers, a similar to 1 nm amorphous Nb/Si interlayer is formed at the Si-on-Nb interface during annealing.
Keywords:
metal-silicon interface
preferred orientation
interdiffusion
ion channeling
low-energy ion-scattering
thin film growth
sputter deposition
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