.png){kind=icon}
.png){kind=icon}
Return
Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy
.png){kind=icon}
PRE
AI
DOI：10.1038/s41928-024-01233-w.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Two-dimensional (2D) semiconductors could potentially be used as channel materials in commercial field-effect transistors. However, the interface between 2D semiconductors and most gate dielectrics contains traps that degrade performance. Layered hexagonal boron nitride (h-BN) can form a defect-free interface with 2D semiconductors, but when prepared by industry-compatible methods-such as chemical vapour deposition (CVD)-the presence of native defects increases leakage current and reduces dielectric strength. Here we show that metal gate electrodes with a high cohesive energy-platinum and tungsten-can allow CVD-grown layered h-BN to be used as a gate dielectric in transistors. The electrodes can reduce the current across CVD-grown h-BN by a factor of around 500 compared to similar devices with gold electrodes and can provide a high dielectric strength of at least 25 MV cm-1. We examine the behaviour statistically across 867 devices, which includes a microchip based on complementary metal-oxide-semiconductor technology. Metal gate electrodes with a high cohesive energy-platinum and tungsten-can be used to mitigate leakage currents and premature dielectric breakdown across chemical vapour deposition-grown multilayer hexagonal boron nitride, allowing the material to be used as a gate dielectric in two-dimensional-materials-based transistors.
Keywords:
FIELD
RESISTANCE
FILMS
MOS2
Journal
IF:
40.9
Papers:
1.7K
Citations:
2.1W
View more organizations