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T

Tibor Grasser

tu wien

59H-index
756Paper Count
1.7WCitation Count
Published Papers 76
Publication Date
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Author Correction: Industrial reliability testing of transistor gate dielectrics
errNature Electronics
IF40.9
err2026-07-30
err0
PREAI
errErnest Y. Wu; Tibor Grasser; Mario Lanza
errShare
errSave
An Efficient SPICE Framework for Simulation of BTI Effects at the Circuit Level
errIEEE Access
IF3.6
err2026-07-17
err0
errOAAI
errJosef Salzmann; Alexander Karl; Dominic Waldhör; Tibor Grasser; Michael Waltl
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errSave
Quantum tunnelling and leakage current across two-dimensional materials
errNature Materials
IF38.5
err2026-07-01
err0
PREAI
errYue Yuan; Francesco Maria Puglisi; Andrea Padovani; Christoph Reuter; Tingting Han; Daria Belotcerkovtceva; Iakov Reznikov; Alexey Berdyugin; Yaqing Shen; Mahdi Pourfath; Theresia Knobloch; Marco A. Villena; Lukas Völkel; Max C. Lemme; Tibor Grasser; Deji Akinwande; Mario Lanza
errShare
errSave
Industrial reliability testing of transistor gate dielectrics
errNature Electronics
IF40.9
err2026-06-24
err0
PREAI
errErnest Y. Wu; Tibor Grasser; Mario Lanza
errShare
errSave
Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
errScience
IF45.8
err2026-04-16
err0
PREAI
errMahdi Pourfath; Tibor Grasser
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errSave
Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability
errCommunications Materials
IF9.6
err2026-01-09
err0
errOAAI
errSeyed Mehdi Sattari-Esfahlan; Yury Illarionov; Fang Xu; Alexandros Provias; Saeed Mirzaei; Jan Michalička; Theresia Knobloch; Ondřej Man; Yangbo Zhou; Tibor Grasser
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errSave
Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs
errnpj 2D Materials and Applications
IF8.8
err2025-12-12
err0
errOAAI
errL. Panarella; B. Kaczer; Q. Smets; T. Nuytten; B. Van Troeye; S. Tyaginov; P. Saraza-Canflanca; T. Grasser; C. Lockhart de la Rosa; G. S. Kar; V. Afanas’ev
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errSave
Evaluation of the robustness of the defect-centric model for defect parameter extraction from RTN and BTI analysis using Comphy
errMicroelectronic Engineering
IF3.1
err2025-12-05
err0
errOAAI
errMartin E.M. Loesener; Tobias Zinsler; Bernhard Stampfer; Florian Wimmer; Eleftherios Ioannidis; Walter Pflanzl; Rainer Minixhofer; Tibor Grasser; Michael Waltl
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errSave
A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projection
errNature Communications
IF15.7
err2025-11-21
err0
errOAAI
errAlexander Karl; Axel Verdianu; Dominic Waldhoer; Theresia Knobloch; Joël Kurzweil; Mina Bahrami; Mohammad Rasool Davoudi; Pedram Khakbaz; Bernhard Stampfer; Seyed Mehdi Sattari-Esfahlan; Yury Illarionov; Aftab Nazir; Changze Liu; Yu Zheng; Lorenzo Pettorosso; Dmitry Polyushkin; Thomas Müller; Saptarshi Das; Xiao Renshaw Wang; Junchuan Tang; Yichi Zhang; Congwei Tan; Ye Li; Hailin Peng; Michael Waltl; Tibor Grasser
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errSave
Compact <italic>I</italic>–<italic>V</italic> Model for Double-Gated MoS<sub>2</sub> FETs Including Short-Channel Effects
errIEEE Transactions on Electron Devices
IF3.2
err2025-11-14
err0
PREAI
errAhmed Mounir; François Lime; Alexander Kloes; Alexandros Provias; Theresia Knobloch; K. P. O'Brien; Tibor Grasser; Benjamin Iñiguez
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errSave
Stability and Reliability of van der Waals High-κ SrTiO3 Field-Effect Transistors with Small Hysteresis
errACS NANO
IF16
err2025-03-19
err0
PREAI
errSattari-Esfahlan, SM; Yang, AJ; Ghosh, R; Zheng, WW; Rzepa, G; Knobloch, T; Lanza, M; Wang, XR; Grasser, T
errShare
errSave
Two-dimensional Bi2SeO2 and Its Native Insulators for Next-Generation Nanoelectronics
errACS NANO
IF16
err2025-03-05
err0
PREAI
errKhakbaz, P; Waldhoer, D; Bahrami, M; Knobloch, T; Pourfath, M; Davoudi, MR; Zhang, YC; Gao, XY; Peng, HL; Waltl, M; Grasser, T
errShare
errSave
Enormous Out-of-Plane Charge Rectification and Conductance through Two-Dimensional Monolayers
errACS NANO
IF16
err2025-01-15
err0
PREAI
errCabanillas, A; Shahi, S; Liu, MM; Jaiswal, HN; Wei, SC; Fu, Y; Chakravarty, A; Ahmed, A; Liu, XC; Sun, J; Yang, C; Yoo, WJ; Knobloch, T; Perebeinos, V; Di Bartolomeo, A; Grasser, T; Yao, F; Li, HM
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errSave
Comprehensive study of SrF2 growth on highly oriented pyrolytic graphite (HOPG): Temperature-dependent van der Waals epitaxy
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-01-01
err0
errOAAI
errBorghi, Mauro; Giovanelli, Giulia; Montecchi, Monica; Capelli, Raffaella; Mescola, Andrea; Paolicelli, Guido; D'Addato, Sergio; Grasser, Tibor; Pasquali, Luca
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Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits
errPHYSICAL REVIEW APPLIED
IF4.4
err2024-12-24
err0
PREAI
errCvitkovich, Lukas; Stano, Peter; Wilhelmer, Christoph; Waldhoer, Dominic; Loss, Daniel; Niquet, Yann-Michel; Grasser, Tibor
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errSave
A stochastic encoder using point defects in two-dimensional materials
errNATURE COMMUNICATIONS
IF15.7
err2024-12-04
err0
errOAAI
errRavichandran, Harikrishnan; Knobloch, Theresia; Subbulakshmi Radhakrishnan, Shiva; Wilhelmer, Christoph; Stepanoff, Sergei P.; Stampfer, Bernhard; Ghosh, Subir; Oberoi, Aaryan; Waldhoer, Dominic; Chen, Chen; Redwing, Joan M.; Wolfe, Douglas E.; Grasser, Tibor; Das, Saptarshi
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errSave
Photonic Neuron With on Frequency-Domain ReLU Activation Function
errJOURNAL OF LIGHTWAVE TECHNOLOGY
IF4.8
err2024-11-15
err0
PREAI
errStephanie, Margareta Vania; Pham, Lam; Schindler, Alexander; Grasser, Tibor; Waltl, Michael; Schrenk, Bernhard
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errSave
Machine learning force field for thermal oxidation of silicon
errJOURNAL OF CHEMICAL PHYSICS
IF3.1
err2024-10-10
err0
errOAAI
errCvitkovich, Lukas; Fehringer, Franz; Wilhelmer, Christoph; Milardovich, Diego; Waldhoer, Dominic; Grasser, Tibor
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errSave
Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs
errPHYSICAL REVIEW APPLIED
IF4.4
err2024-08-30
err0
errOAAI
errFeil, Maximilian W.; Weger, Magdalena; Reisinger, Hans; Aichinger, Thomas; Kabakow, Andre; Waldhoer, Dominic; Jakowetz, Andreas C.; Prigann, Sven; Pobegen, Gregor; Gustin, Wolfgang; Waltl, Michael; Bockstedte, Michel; Grasser, Tibor
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errSave
Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy
errNATURE ELECTRONICS
IF40.9
err2024-08-26
err2
PREAI
errShen, Yaqing; Zhu, Kaichen; Xiao, Yiping; Waldhoer, Dominic; Basher, Abdulrahman H.; Knobloch, Theresia; Pazos, Sebastian; Liang, Xianhu; Zheng, Wenwen; Yuan, Yue; Roldan, Juan B.; Schwingenschloegl, Udo; Tian, He; Wu, Huaqiang; Schranghamer, Thomas F.; Trainor, Nicholas; Redwing, Joan M.; Das, Saptarshi; Grasser, Tibor; Lanza, Mario
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errSave

Research Directions

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Co-authors
Cooperation Journals
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H-index: 198 · Papers: 5.5K
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H-index: 131 · Papers: 640
T
Thomas D. Anthopoulos
H-index: 105 · Papers: 660
D
Daniel Loss
H-index: 101 · Papers: 804
Z
Zdeněk Sofer
H-index: 98 · Papers: 1.1K
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