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J.B. Roldán

University of Granada

38H-index
259Paper Count
6.6KCitation Count
Published Papers 41
Publication Date
Enabling Quantum-Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2-Based RRAM From 300 to 1.5 K
err2026-08-14
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errOAAI
errEmilio Pérez-Bosch Quesada; Alberto Mistroni; Ruolan Jia; Keerthi Dorai Swamy Reddy; Markus Fritscher; Felix Reichmann; Oliver Skibitzki; Juan Bautista Roldán; Helena Castán; Salvador Dueñas; Christian Wenger; Eduardo Pérez
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Analytical Solution for the Potential Distribution in the Channel of A Graphene Field-Effect Transistor Validated with a Custom-Fabricated Test Platform
err2026-04-30
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errOAAI
errAntonio Cantudo; Francisco Pasadas; Anibal Pacheco-Sánchez; Rem Elnahas; Miguel Muñoz Rojo; Juan Bautista Roldán
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Conductance quantization in memristive devices with electrodeposited Prussian blue-based dielectrics
err2025-11-12
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errOAAI
errA. Cantudo; L.B. Avila; M.A. Villena; F. Jiménez-Molinos; C. Ducarme; A. Lopes Temporao; A. Moureaux; F. Abreu Araujo; C.K. Müller; J.B. Roldán
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Life cycle assessment of digital memories: The memristor’s environmental footprint
err2025-10-10
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errOAAI
errNerea Benito; Jose Carlos Pérez-Martínez; Juan B. Roldán; Ángela Lao; Antonio Urbina; Lucía Serrano-Luján
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Statistical, simulation and modeling analysis of variability in memristors with single and bilayer dielectrics of HfO2 and Al2O3, a comparison
err2025-07-01
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PREAI
errCantudo, A.; Jimenez-Molinos, F.; Ruiz, P. Q.; Lopez, A.; Villena, M. A.; Gonzalez, M. B.; Campabadal, F.; Roldan, J. B.
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Variability analysis in memristors based on electrodeposited prussian blue
err2025-06-19
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PREAI
errL.B. Avila; A. Cantudo; M.A. Villena; D. Maldonado; F. Abreu Araujo; C.K. Müller; J.B. Roldán
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Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis
err2024-11-01
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errOAAI
errMaldonado, David; Cantudo, Antonio; Reddy, Keerthi Dorai Swamy; Pechmann, Stefan; Uhlmann, Max; Wenger, Christian; Roldan, Juan Bautista; Perez, Eduardo
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Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy
err2024-08-26
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PREAI
errShen, Yaqing; Zhu, Kaichen; Xiao, Yiping; Waldhoer, Dominic; Basher, Abdulrahman H.; Knobloch, Theresia; Pazos, Sebastian; Liang, Xianhu; Zheng, Wenwen; Yuan, Yue; Roldan, Juan B.; Schwingenschloegl, Udo; Tian, He; Wu, Huaqiang; Schranghamer, Thomas F.; Trainor, Nicholas; Redwing, Joan M.; Das, Saptarshi; Grasser, Tibor; Lanza, Mario
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Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states
err2024-08-01
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errOAAI
errJimenez-Molinos, F.; Vinuesa, G.; Garcia, H.; Duenas, S.; Castan, H.; Gonzalez, M. B.; Campabadal, F.; Roldan, J. B.
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Hardware implementation of memristor-based artificial neural networks
err2024-03-04
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errOAAI
errAguirre, Fernando; Sebastian, Abu; Le Gallo, Manuel; Song, Wenhao; Wang, Tong; Yang, J. Joshua; Lu, Wei; Chang, Meng-Fan; Ielmini, Daniele; Yang, Yuchao; Mehonic, Adnan; Kenyon, Anthony; Villena, Marco A.; Roldan, Juan B.; Wu, Yuting; Hsu, Hung-Hsi; Raghavan, Nagarajan; Sune, Jordi; Miranda, Enrique; Eltawil, Ahmed; Setti, Gianluca; Smagulova, Kamilya; Salama, Khaled N.; Krestinskaya, Olga; Yan, Xiaobing; Ang, Kah-Wee; Jain, Samarth; Li, Sifan; Alharbi, Osamah; Pazos, Sebastian; Lanza, Mario
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Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors
err2024-02-15
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errOAAI
errRoldan, Juan B.; Cantudo, Antonio; Maldonado, David; Aguilera-Pedregosa, Cristina; Moreno, Enrique; Swoboda, Timm; Jimenez-Molinos, Francisco; Yuan, Yue; Zhu, Kaichen; Lanza, Mario; Munoz Rojo, Miguel
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Stochastic resonance in 2D materials based memristors
err2024-01-30
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errOAAI
errRoldan, J. B.; Cantudo, A.; Torres, J. J.; Maldonado, D.; Shen, Yaqing; Zheng, Wenwen; Yuan, Yue; Lanza, M.
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Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices
err2024-01-01
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errOAAI
errMaldonado, D.; Baroni, A.; Aldana, S.; Reddy, K. Dorai Swamy; Pechmann, S.; Wenger, C.; Roldan, J. B.; Perez, E.
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Variability in HfO2-based memristors described with a new bidimensional statistical technique
err2024-01-01
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errOAAI
errAcal, C.; Maldonado, D.; Cantudo, A.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.
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A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
err2024-01-01
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errOAAI
errMaldonado, D.; Vinuesa, G.; Aldana, S.; Aguirre, F. L.; Cantudo, A.; Garcia, H.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, R.; Miranda, E.; Duenas, S.; Castan, H.; Roldan, J. B.
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3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach
err2024-01-01
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errOAAI
errMaldonado, D.; Cantudo, A.; Gomez-Campos, F. M.; Yuan, Yue; Shen, Yaqing; Zheng, Wenwen; Lanza, M.; Roldan, J. B.
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TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance
err2023-09-19
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errOAAI
errMaldonado, David; Cantudo, Antonio; Perez, Eduardo; Romero-Zaliz, Rocio; Quesada, Emilio Perez-Bosch; Mahadevaiah, Mamathamba Kalishettyhalli; Jimenez-Molinos, Francisco; Wenger, Christian; Roldan, Juan Bautista
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Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
err2023-06-12
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PREAI
errGarcia, H.; Vinuesa, G.; Garcia-Ochoa, E.; Aguirre, F. L.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.; Miranda, E.; Duenas, S.; Castan, H.
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Conductance quantization in h-BN memristors
err2023-05-15
err7
PREAI
errRoldan, J. B.; Maldonado, D.; Cantudo, A.; Shen, Yaqing; Zheng, Wenwen; Lanza, M.
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Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient
err2023-04-07
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errOAAI
errAcal, Christian; Maldonado, David; Aguilera, Ana M.; Zhu, Kaichen; Lanza, Mario; Roldan, Juan Bautista
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