Zhichao Yang - Publications, H-index & Citations

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Zhichao Yang

chinese academy of sciences

5H-index

18Paper Count

151Citation Count

Published Papers 6

Publication Date

Single-field-plate GaN HEMTs achieving >2400 V breakdown voltage and 106% dynamic on-resistance at 600 V stress

Japanese Journal of Applied Physics

IF1.8

2026-03-31

PREAI

Yang, Zhichao; Liao, Eason; Zhuang, Jungang; Dong, Hao; Zhang, Shuangshuang; Zhu, Lei; Yang, Zezheng; Zhang, Bingliang; Yu, Guohao; Zeng, Zhongming; Zhang, Baoshun

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GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure

APPLIED PHYSICS EXPRESS

IF2.2

2025-11-01

PREAI

Yang, Zhichao; Liao, Eason; Ding, Daniel; Zhuang, Jungang; Dong, Hao; Yang, Han; Zhu, Lei; Zhang, Bingliang; Yu, Guohao; Zeng, Zhongming; Zhang, Baoshun

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Efficiency improved by monolithic integration of HEMT with vertical-structure LEDs and Mg doping on dry etched GaN

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2019-01-01

PREAI

Chen, Dingbo; Liu, Zhikun; Lu, Xing; Wan, Lijun; Li, Runze; Yang, Zhichao; Li, Guoqiang

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Current gain above 10 in sub-10nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

APPLIED PHYSICS LETTERS

IF3.6

2016-05-11