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Sanghun Jeon

korea advanced institute of science & technology (kaist)

52H-index
270Paper Count
1.1WCitation Count
Published Papers 110
Publication Date
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Band Engineering of Gate Interlayer for Low-Voltage Operation and Enhanced Reliability in Gate-Injection Type FeFETs
errIEEE Electron Device Letters
IF4.5
err2026-04-01
err0
PREAI
errKim, Hoon; Kim, Giuk; Choi, Hyojun; Joh, Hongrae; Kang, Hyunjun; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon; Ahn, Jinho; Jeon, Sanghun
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A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention
errIEEE Transactions on Electron Devices
IF3.2
err2026-02-11
err0
PREAI
errHyunjun Kang; Hongrae Joh; Junhyeok Kwak; Giuk Kim; Hyojun Choi; Hoon Kim; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
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Deeply Implantable, Shape-Morphing, 3D MicroLEDs for Pancreatic Cancer Therapy (Adv. Mater. 49/2025)
errAdvanced Materials
IF26.8
err2025-12-10
err0
errOAAI
errJae Hee Lee; Chae Gyu Lee; Min Seo Kim; Seungyeob Kim; Myoung Song; Haohui Zhang; Eunbyeol Yang; Yoon Hee Kwon; Young Hoon Jung; Dong Yeol Hyeon; Yoon Ji Choi; Seyong Oh; Daniel J. Joe; Taek-Soo Kim; Sanghun Jeon; Yonggang Huang; Tae-Hyuk Kwon; Keon Jae Lee
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An ultra-thin InO interlayer as an oxygen reservoir for defect passivation and enhanced ferroelectricity in hafnia devices
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2025-11-01
err0
PREAI
errHwang, Junghyeon; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun
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Ferroelectricity in Sub-3 nm HZO via a Thin Mo Layer: Interface Engineering for Scalable Memory
errPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
IF1.9
err2025-11-01
err0
PREAI
errKim, Yongsu; Hwang, Junghyeon; Kim, Chaeheon; Kang, Geonhyeong; Jeon, Sanghun
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Interface engineering of oxidized Mo electrodes for imprint stability and enhanced endurance in hafnia-based ferroelectric devices
errJ. Mater. Chem. C
IF0
err2025-10-29
err0
PREAI
errJunghyeon Hwang †; Chaeheon Kim †; Geonhyeong Kang; Yongsu Kim; Jinho Ahn; Sanghun Jeon
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Stabilized Negative Capacitance for Near-Theoretical Efficiency and High Reliability in Charge Trap Flash Memory
errMaterials Today Physics
IF9.7
err2025-09-19
err0
PREAI
errSangho Lee; Giuk Kim; Yunseok Nam; Yangjin Jeong; Hyunjun Kang; Woongjin Kim; Hunbeom Shin; Mincheol Shin; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
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Near-Sensor Analog Computing via Monolithic 3D Piezoelectric Sensor–FeFET for Tactile Sensing System
errAdvanced Functional Materials
IF19
err2025-08-14
err0
PREAI
errWoongjin Kim; Seungyeob Kim; Jinwook Ha; Taeseung Jung; Yunjeong Kim; Jinho Ahn; Sanghun Jeon
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Enhancing Program Speed and Diminishing Read After Write Delay by Metal Work Function Engineering
errIEEE Electron Device Letters
IF4.5
err2025-08-01
err0
PREAI
errSeokjoong Shin; Giuk Kim; Hyojun Choi; Sanghyun Park; Kwangyou Seo; Kwangsoo Kim; Wanki Kim; Daewon Ha; Jinho Ahn; Sanghun Jeon
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Very high frequency (∼100 MHz) plasma enhanced atomic layer deposition high-κ hafnium zirconium oxide capacitors near morphotropic phase boundary with low current density & high-κ for DRAM technology
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2025-01-01
err0
errOAAI
errYang, Ketong; Shin, Hunbeom; Kim, Seungyeob; Jung, Taeseung; Jeon, Sanghun
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errSave
Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2025-01-01
err0
PREAI
errHwang, Junghyeon; Shin, Hunbeom; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun
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errSave
Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures
errNANO CONVERGENCE
IF11
err2024-12-16
err0
errOAAI
errHwang, Junghyeon; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun
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Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security
errIEEE INTERNET OF THINGS JOURNAL
IF8.9
err2024-08-15
err0
PREAI
errLim, Sehee; Hwang, Junghyeon; Ko, Dong Han; Kim, Se Keon; Oh, Tae Woo; Jeon, Sanghun; Jung, Seong-Ook
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Monolithic three-dimensional hafnia-based artificial nerve system
errNANO ENERGY
IF17.1
err2024-07-01
err2
PREAI
errJung, Minhyun; Kim, Seungyeob; Hwang, Junghyeon; Kim, Chaeheon; Kim, Hye Jin; Kim, Yun-Jeong; Jeon, Sanghun
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Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-03-22
err4
errOAAI
errYun, Seokjung; Kim, Hoon; Seo, Myungsoo; Kang, Min-Ho; Kim, Taeho; Cho, Seongwoo; Park, Min Hyuk; Jeon, Sanghun; Choi, Yang-Kyu; Hong, Seungbum
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Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural Network
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-01-04
err8
PREAI
errHwang, Junghyeon; Joh, Hongrae; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun
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Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2024-01-01
err0
PREAI
errJoh, Hongrae; Lee, Sangho; Ahn, Jinho; Jeon, Sanghun
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A six-level ferroelectric storage cell based on a bidirectional imprint field
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2024-01-01
err1
PREAI
errKim, Chaeheon; Hwang, Junghyeon; Shin, Hunbeom; Ahn, Jinho; Jeon, Sanghun
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Three-terminal vertical ferroelectric synaptic barristor enabled by HZO/graphene heterostructure with rebound depolarization
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2023-11-01
err2
PREAI
errJang, Seonghoon; Kim, Yongjun; Jeon, Jihoon; Ham, Seonggil; Choi, Sanghyeon; Yang, Jehyeon; Kim, Seong Keun; Jeon, Sanghun; Jang, Jingon; Wang, Gunuk
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Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-10-24
err3
PREAI
errJoh, Hongrae; Nam, Sooji; Jung, Minhyun; Shin, Hunbeom; Cho, Sung Haeng; Jeon, Sanghun
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Research Directions

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Co-authors
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J
Jeffrey B.‐H. Tok
H-index: 71 · Papers: 142
T
Takhee Lee
H-index: 69 · Papers: 376
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