logo
CanyamAI summaries for academic research
language
MobileMobile
  • Phone FeatureWeChat Mini Program
EnglishEnglish
noticeNotice
BlogBlog
delete
arrow
Back
D

D. Nirmal

Sri Ramakrishna Engineering College

32H-index
199Paper Count
3.6KCitation Count
Published Papers 43
Publication Date
logo
Demonstration of Fe-Doped GaN Buffer HEMT to Achieve fMAX of 167 GHz
errPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
IF1.9
err2025-11-01
err0
PREAI
errFranklin, S. Angen; Jebalin, Binola K.; Chander, Subhash; Rawal, D. S.; Du John, H. Victor; Nirmal, D.
errShare
errSave
Optimisation of Ion/Ioff and transconductance of germanium based dual metal gate hetero-dielectric TFET
errMICRO AND NANOSTRUCTURES
IF3
err2025-06-01
err0
PREAI
errGracia, D.; Moni, D. Jackuline; Nirmal, D.
errShare
errSave
Nanosheet transistors: materials, devices, systems and applications
errJOURNAL OF MATERIALS SCIENCE
IF3.9
err2025-04-01
err0
PREAI
errDelighta, A. Angelin; Kumar, J. S. Raj; Jebalin, I. V.; Nirmal, D.
errShare
errSave
Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems
errRESULTS IN ENGINEERING
IF7.9
err2025-03-01
err0
errOAAI
errDeshpande, Gauri; Ajayan, J.; Bhattacharya, Sandip; Mounika, B.; Dwivedi, Amit Krishna; Nirmal, D.
errShare
errSave
Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers
errRESULTS IN ENGINEERING
IF7.9
err2025-03-01
err0
errOAAI
errAkshaykranth, A.; Ajayan, J.; Bhattacharya, Sandip; Nirmal, D.; Paramasivam, Santhosh; Gatto, Gianluca; Kumar, Amit
errShare
errSave
LG = 50 nm T-gated and Fe-doped double quantum well GaN-HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications
errJOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES
IF6.8
err2024-12-01
err0
errOAAI
errMounika, B.; Ajayan, J.; Bhattacharya, Sandip; Nirmal, D.; Dwivedi, Amit Krishna
errShare
errSave
A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2024-02-09
err0
errOAAI
errDhivyasri, G.; Manikandan, M.; Ajayan, J.; Sreejith, S.; Remya, R.; Nirmal, D.
errShare
errSave
A Novel LG=40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers
errIEEE ACCESS
IF3.6
err2024-01-01
err4
errOAAI
errMounika, B.; Panigrahy, Asisa Kumar; Ajayan, J.; Khadar Basha, N.; Bharath Sreenivasulu, Vakkalakula; Durga Prakash, M.; Bhattacharya, Sandip; Nirmal, D.
errShare
errSave
Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications
errMATERIALS TODAY COMMUNICATIONS
IF4.5
err2023-06-01
err22
PREAI
errAjayan, J.; Mohankumar, P.; Nirmal, D.; Joseph, L. M. I. Leo; Bhattacharya, Sandip; Sreejith, S.; Kollem, Sreedhar; Rebelli, Shashank; Tayal, Shubham; Mounika, B.
errShare
errSave
Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2022-11-01
err72
PREAI
errAjayan, J.; Nirmal, D.; Mohankumar, P.; Mounika, B.; Bhattacharya, Sandip; Tayal, Shubham; Fletcher, A. S. Augustine
errShare
errSave
Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2022-10-01
err13
PREAI
errHamza, K. Husna; Nirmal, D.; Fletcher, A. S. Augustine; Ajayan, J.; Natarajan, Ramkumar
errShare
errSave
InGaAs based gratings for UV-VIS spectrometer in prospective mRNA vaccine research
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2022-07-26
err1
errOAAI
errRavindran, Ajith; Nirmal, D.; Jebalin, Binola K. I., V; Pinkymol, K. P.; Prajoon, P.; Ajayan, J.
errShare
errSave
Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2022-02-16
err4
PREAI
errManikandan, M.; Nirmal, D.; Ajayan, J.; Arivazhagan, L.; Prajoon, P.; Dhivyasri, G.; Jagadeeswari, M.
errShare
errSave
Applicability of double Channel Technique in AlGaN/GaN HEMT for future biosensing applications
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2021-12-01
err13
PREAI
errArivazhagan, L.; Nirmal, D.; Jarndal, Anwar; Huq, Hasina F.; Chander, Subhash; Bhagyalakshmi, S.; Reddy, Pavan Kumar; Ajayan, J.; Varghese, Arathy
errShare
errSave
A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
errMEASUREMENT
IF5.6
err2021-12-01
err33
PREAI
errAjayan, J.; Nirmal, D.; Ramesh, R.; Bhattacharya, Sandip; Tayal, Shubham; Joseph, L. M. I. Leo; Thoutam, Laxman Raju; Ajitha, D.
errShare
errSave
Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2021-11-01
err7
errOAAI
errMurugapandiyan, P.; Nirmal, D.; Hasan, Md Tanvir; Varghese, Arathy; Ajayan, J.; Fletcher, A. S. Augustine; Ramkumar, N.
errShare
errSave
Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2021-07-01
err17
PREAI
errHamza, K. Husna; Nirmal, D.; Fletcher, A. S. Augustine; Arivazhagan, L.; Ajayan, J.; Natarajan, Ramkumar
errShare
errSave
A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2021-06-01
err29
PREAI
errAjayan, J.; Nirmal, D.; Mathew, Ribu; Kurian, Dheena; Mohankumar, P.; Arivazhagan, L.; Ajitha, D.
errShare
errSave
Optical Grating Techniques for MEMS-Based Spectrometer-A Review
errIEEE SENSORS JOURNAL
IF4.5
err2021-03-01
err9
PREAI
errRavindran, Ajith; Nirmal, D.; Prajoon, P.; Rani, D. Gracia Nirmala
errShare
errSave
Numerical investigation of traps and optical response in III-V nitride quantum LED
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2020-11-22
err8
PREAI
errManikandan, M.; Nirmal, D.; Ajayan, J.; Arivazhagan, L.; Prajoon, P.; Dhivyasri, G.
errShare
errSave

Research Directions

No research directions
Co-authors
Cooperation Journals
J
J. Ajayan
H-index: 32 · Papers: 234
S
Sandip Bhattacharya
H-index: 31 · Papers: 219
G
Gianluca Gatto
H-index: 24 · Papers: 180
A
Anwar Jarndal
H-index: 23 · Papers: 187
S
Shubham Tayal
H-index: 21 · Papers: 103
View more