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J

J. Ajayan

the icfai foundation for higher education (ifhe)

32H-index
234Paper Count
3.5KCitation Count
Published Papers 55
Publication Date
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Thermal Dynamics of 7 nm FinFET Process Cascode Cross Coupled Double Tail Dynamic Comparator for Future Analog to Digital Converters
errSemiconductors
IF0.6
err2025-11-01
err0
PREAI
errYedulapuram, Sharvani; Ajayan, J.; Panigrahy, Asisa Kumar; Joseph, L. M. I. Leo
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Improvement of radiation hardness for a novel InP-based HEMT with graded In1-xGaxAs channel layer and double Si-doped structure
errResults in Engineering
IF7.9
err2025-10-31
err0
errOAAI
errShuxiang Sun; Xintong Xie; Hongying Mei; Xiaorong Luo; J. Ajayan
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errSave
Inorganic Nanocatalysts for Energy Systems, Environmental/Industrial Processes and Healthcare Applications : A Comprehensive Review
errMaterials Today Sustainability
IF7.9
err2025-10-04
err0
errOAAI
errJ. Ajayan; S. Sreejith; B. Mounika; A.S. Augustine Fletcher; Ribu Mathew; M. Saravanan; Puneet Sharma
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errSave
Thermal dynamics of 7-nm FinFET process-based negative edge triggered (NET) TSPC D flip-flop for future AI and IoT applications
errJOURNAL OF THE KOREAN PHYSICAL SOCIETY
IF0.9
err2025-10-01
err0
PREAI
errJuveria, Syeda Hurmath; Shashank, R.; Panigrahy, Asisa Kumar; Ajayan, J.
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errSave
Thermal Reliability Analysis for 7-nm FinFET Based Positive Edge Triggered TSPC Flip-Flop for Future IoT and AI Applications
errCircuits Systems and Signal Processing
IF2
err2025-10-01
err0
PREAI
errJuveria, Syeda Hurmath; Ajayan, J.; Shashank, R.
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errSave
Enhancing the Performance of InGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors for Future Radio-Frequency Power Amplifiers
errSEMICONDUCTORS
IF5.3
err2025-10-01
err0
PREAI
errRepaka, Lavanya; Ajayan, J.; Bhattacharya, Sandip
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Evaluating Structural Parameter Variations in AlGaN/GaN HEMTs on Si with Step-Graded InGaN Layers for future Radar and RF Transmitters
errNATIONAL ACADEMY SCIENCE LETTERS-INDIA
IF1.3
err2025-10-01
err0
PREAI
errAkshaykranth, A.; Ajayan, J.; Bhattacharya, Sandip
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errSave
Recent progress in nanomaterial based acoustic wave sensors: a review
errMeasurement
IF5.6
err2025-09-24
err0
PREAI
errS. Sreejith; J. Ajayan; N.V. Uma Reddy; V.T. Vijumon; M. Manikandan
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Recent developments in AlGaN/GaN MOSHEMTs for future high power RF electronics: A review
errMicro and Nanostructures
IF3
err2025-09-11
err0
PREAI
errK. Ratna; J. Ajayan; B. Mounika
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A comprehensive review of green hydrogen technologies for clean energy futures
errJOURNAL OF THE KOREAN PHYSICAL SOCIETY
IF0.9
err2025-09-01
err0
PREAI
errSreejith, S.; Panigrahy, Asisa Kumar; Ajayan, J.; Uma Reddy, N. V.; Dev, R. S. Syam
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NC-ROLL-FIA: Negative capacitance FET based designs for robust logic locking against fault injection attacks enabling trustworthy hardware for edge AI devices
errResults in Engineering
IF7.9
err2025-08-26
err0
errOAAI
errKadiyam Tirumalarao; Ramesh Vaddi; M. Durga Prakash; Asisa Kumar Panigrahy; J. Ajayan; Amit Krishna Dwivedi
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errSave
Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer
errmicromachines
IF0
err2025-08-09
err0
errOAAI
errShuxiang Sun; Lulu Liu; Gangchuan Qu; Xintong Xie; J. Ajayan
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errSave
Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems
errRESULTS IN ENGINEERING
IF7.9
err2025-03-01
err0
errOAAI
errDeshpande, Gauri; Ajayan, J.; Bhattacharya, Sandip; Mounika, B.; Dwivedi, Amit Krishna; Nirmal, D.
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errSave
Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers
errRESULTS IN ENGINEERING
IF7.9
err2025-03-01
err0
errOAAI
errAkshaykranth, A.; Ajayan, J.; Bhattacharya, Sandip; Nirmal, D.; Paramasivam, Santhosh; Gatto, Gianluca; Kumar, Amit
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Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review
errIEEE ACCESS
IF3.6
err2025-01-01
err0
errOAAI
errAjayan, J.; Sreenivasulu, Vakkalakula Bharath; Kumari, N. Aruna; Sreejith, S.; Das, Subhajit
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LG = 50 nm T-gated and Fe-doped double quantum well GaN-HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications
errJOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES
IF6.8
err2024-12-01
err0
errOAAI
errMounika, B.; Ajayan, J.; Bhattacharya, Sandip; Nirmal, D.; Dwivedi, Amit Krishna
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errSave
Recent advances in nano biosensors: An overview
errMEASUREMENT
IF5.6
err2024-08-01
err4
PREAI
errSreejith, S.; Ajayan, J.; Radhika, J. M.; Reddy, N. V. Uma; Manikandan, M.
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Terahertz sensors for next generation biomedical and other industrial electronics applications: A critical review
errSENSORS AND ACTUATORS A-PHYSICAL
IF4.9
err2024-04-01
err14
PREAI
errAjayan, J.; Sreejith, S.; Manikandan, M.; Lai, Wen-Cheng; Saha, Sumit
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errSave
2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/ GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2024-03-01
err15
PREAI
errMounika, B.; Ajayan, J.; Bhattacharya, Sandip
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errSave
A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2024-02-09
err0
errOAAI
errDhivyasri, G.; Manikandan, M.; Ajayan, J.; Sreejith, S.; Remya, R.; Nirmal, D.
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errSave

Research Directions

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Co-authors
Cooperation Journals
刘露露 cover
刘露露 (Lulu Liu)
H-index: 37 · Papers: 234
W
Wen‐Cheng Lai
H-index: 32 · Papers: 420
D
D. Nirmal
H-index: 32 · Papers: 199
S
Sandip Bhattacharya
H-index: 31 · Papers: 219
G
Gianluca Gatto
H-index: 24 · Papers: 180
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