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Clint D. Frye

lawrence livermore national laboratory

12H-index
54Paper Count
392Citation Count
Published Papers 17
Publication Date
Bistable Optical Semiconductor Switching Based on C-Doped GaN
err2026-03-06
err0
PREAI
errSoroush Ghandiparsi; Qinghui Shao; Caitlin A. Chapin; Laura Leos; Joseph D. Schneider; Samuel M. Wagner; Steven F. Chapman; Clint D. Frye; Sara E. Harrison; Joel B. Varley; Lars F. Voss
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Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors
err2024-10-25
err0
errOAAI
errGhandiparsi, Soroush; Chatterjee, Bikram; Shen, Jimmy-Xuan; Gottlieb, Miranda S.; Frye, Clint D.; Schneider, Joseph D.; Muir, Ryan D.; Buckley, Brandon W.; Harrison, Sara E.; Shao, Qinghui; Varley, Joel B.; Voss, Lars F.
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Radiation hardness of polycrystalline ceramic scintillators for radioisotope batteries
err2022-10-04
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errOAAI
errJarrell, Joshua T.; Cherepy, Nerine; Seeley, Zachary; Swanberg, Erik; Voss, Lars; Frye, Clint; Stoyer, Mark; Henderson, Roger; Nikolic, Rebecca
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ICP etching of GaN microstructures in a Cl2-Ar plasma with subnanometer-scale sidewall surface roughness
err2022-06-01
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errOAAI
errFrye, Clint D.; Reinhardt, Catherine E.; Donald, Scott B.; Voss, Lars F.; Harrison, Sara E.
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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System
err2021-11-10
err3
PREAI
errShao, Qinghui; Jarrell, Joshua T.; Murphy, John M.; Frye, Clint D.; Henderson, Roger A.; Stoyer, Mark A.; Voss, Lars F.; Nikolic, Rebecca J.
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Demonstration of a Three-Dimensionally Structured Betavoltaic
err2021-01-05
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errOAAI
errMurphy, John W.; Frye, Clint D.; Henderson, Roger A.; Stoyer, Mark A.; Voss, Lars F.; Nikolic, Rebecca J.
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Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma
err2020-11-24
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errOAAI
errFrye, Clint D.; Donald, Scott B.; Reinhardt, Catherine E.; Nikolic, Rebecca J.; Voss, Lars F.; Harrison, Sara E.
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Selenium-iodide: A low melting point eutectic semiconductor
err2018-12-11
err7
errOAAI
errVoss, L. F.; Murphy, J. W.; Shao, Q.; Henderson, R. A.; Frye, C. D.; Stoyer, M. A.; Nikolic, R. J.
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Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC
err2017-12-22
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errOAAI
errFrye, C. D.; Saw, C. K.; Padavala, Balabalaji; Khan, Neelam; Nikolic, R. J.; Edgar, J. H.
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Hydride CVD Hetero-epitaxy of B12P2 on 4H-SiC
err2017-02-01
err6
errOAAI
errFrye, C. D.; Saw, C. K.; Padavala, Balabalaji; Nikolic, R. J.; Edgar, J. H.
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Detection of defect populations in superhard semiconductor boron subphosphide B12P2 through X-ray absorption spectroscopy
err2017-01-01
err9
errOAAI
errHuber, S. P.; Gullikson, E.; Meyer-Ilse, J.; Frye, C. D.; Edgar, J. H.; van de Kruijs, R. W. E.; Bijkerk, F.; Prendergast, D.
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Self-healing in B12P2 through Mediated Defect Recombination
err2016-11-09
err10
errOAAI
errHuber, S. P.; Gullikson, E.; Frye, C. D.; Edgar, J. H.; de Kruijs, R. W. E. van; Bijkerk, F.; Prendergast, D.
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Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide (vol 47, pg 55, 2015)
err2016-03-01
err0
PREAI
errPadavala, Balabalaji; Frye, C. D.; Ding, Zihao; Chen, Ruifen; Dudley, Michael; Raghothamachar, Balaji; Khan, Neelam; Edgar, J. H.
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Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate
err2015-12-31
err69
PREAI
errPadavala, Balabalaji; Frye, C. D.; Wang, Xuejing; Ding, Zihao; Chen, Ruifen; Dudley, Michael; Raghothamachar, Balaji; Lu, Peng; Flanders, B. N.; Edgar, J. H.
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Preparation, properties, and characterization of boron phosphide films on 4H-and 6H-silicon carbide
err2015-09-01
err23
errOAAI
errPadavala, Balabalaji; Frye, C. D.; Ding, Zihao; Chen, Ruifen; Dudley, Michael; Raghothamachar, Balaji; Khan, Neelam; Edgar, J. H.
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