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D

Daniel Gall

rensselaer polytechnic institute

61H-index
310Paper Count
1.2WCitation Count
Published Papers 96
Publication Date
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Phase formation kinetics of metastable fcc cobalt
errMATERIALS & DESIGN
IF7.9
err2026-03-18
err0
errOAAI
errAnshuman Thakral; Rui Shu; Justinas Palisaitis; Daniel Gall
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errSave
Sputter deposition of epitaxial manganese boride Mn2B(100) films
errJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
IF2.1
err2026-03-01
err0
PREAI
errRahman, Sanzida; Shu, Rui; Gall, Daniel
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errSave
Cr2AlC: A High-Temperature Transparent Conducting Ceramic
errAdvanced Materials Interfaces
IF4.4
err2026-02-15
err0
errOAAI
errBaiwei Wang; Atharv Jog; Peijiao Fang; Sushant Kumar; Rui Shu; Jian Shi; Ravishankar Sundararaman; Daniel Gall
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errSave
The Effect of Co/TiN Interfaces on Co Interconnect Resistivity
errSURFACES
IF2.9
err2025-12-13
err0
errOAAI
errShen, Poyen; Rahman, Sanzida; Syracuse, Daniel M.; Gall, Daniel
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errSave
PtCoO2 for Scaled Interconnects
errSMALL STRUCTURES
IF11.3
err2025-03-27
err0
errOAAI
errYansong Li; Guanyu Zhou; Michelle M. Kelley; Sadiq Shahriyar Nishat; Sara Bey; Muhsin Abdul Karim; Xinyu Liu; Badih A. Assaf; Daniel Gall
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Resistivity size effect in epitaxial face-centered cubic Co(001) layers
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-03-19
err2
errOAAI
errThakral, Anshuman; Jog, Atharv; Gall, Daniel
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Anisotropic Resistivity Size Effect in Epitaxial Mo(001) and Mo(011) Layers
errNANOMATERIALS
IF4.3
err2023-03-07
err15
errOAAI
errJog, Atharv; Zheng, Pengyuan; Zhou, Tianji; Gall, Daniel
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Mechanical and electronic properties of transition metal hexa-nitrides in hexagonal structure from density functional theory calculations
errCOMPUTATIONAL MATERIALS SCIENCE
IF3.3
err2023-03-01
err3
errOAAI
errKandel, S. R.; Dumre, B. B.; Gall, D.; Khare, S. V.
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Ultrathin Ruthenium Films on Graphene Buffered SiO2 via Quasi Van der Waals Epitaxy
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2022-12-07
err5
errOAAI
errLu, Zonghuan; Zhang, Lihua; Wen, Xixing; Jog, Atharv; Kisslinger, Kim; Gao, Lei; Shi, Jian; Gall, Daniel; Washington, Morris A.; Wang, Gwo-Ching; Lu, Toh-Ming
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Investigation of hardness in transition metal hexa-nitrides in cubic structure: A first-principles study
errJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
IF4.9
err2022-12-01
err4
errOAAI
errKandel, S. R.; Dumre, B. B.; Gall, D.; Khare, S. V.
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In Situ High-Temperature TEM Observation of Inconel Corrosion by Molten Chloride Salts with N2, O2, or H2O
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2022-09-09
err3
errOAAI
errPragnya, Prachi; Gall, Daniel; Hull, Robert
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errSave
Prediction of super hardness in transition metal hexa-nitrides from density functional theory computations
errMATERIALIA
IF2.9
err2022-09-01
err3
errOAAI
errKandel, S. R.; Dumre, B. B.; Gall, D.; Khare, S., V
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errSave
Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films
errADVANCED FUNCTIONAL MATERIALS
IF19
err2022-08-28
err7
errOAAI
errPerez, Christopher; Jog, Atharv; Kwon, Heungdong; Gall, Daniel; Asheghi, Mehdi; Kumar, Suhas; Park, Woosung; Goodson, Kenneth E.
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errSave
Ultralow electron-surface scattering in nanoscale metals leveraging Fermi-surface anisotropy
errPHYSICAL REVIEW MATERIALS
IF3.4
err2022-08-25
err22
errOAAI
errKumar, Sushant; Multunas, Christian; Defay, Benjamin; Gall, Daniel; Sundararaman, Ravishankar
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errSave
First-principles prediction of electron grain boundary scattering in fcc metals
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-06-13
err22
PREAI
errZhou, Tianji; Jog, Atharv; Gall, Daniel
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Epitaxial TiCx(001) layers: Phase formation and physical properties vs C-to-Ti ratio
errACTA MATERIALIA
IF9.3
err2022-03-01
err12
errOAAI
errFang, Peijiao; Mulligan, C. P.; Jia, Ru; Shi, Jian; Khare, S., V; Gall, Daniel
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errSave
Effect of electronegativity on electron surface scattering in thin metal layers
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-01-26
err16
PREAI
errJog, Atharv; Milosevic, Erik; Zheng, Pengyuan; Gall, Daniel
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Correlating structure and orbital occupation with the stability and mechanical properties of 3d transition metal carbides
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2022-01-01
err22
errOAAI
errKhatri, I.; Szymanski, N. J.; Dumre, B. B.; Amar, J. G.; Gall, D.; Khare, S. V.
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Materials for interconnects
errMRS BULLETIN
IF4.9
err2021-10-28
err72
PREAI
errGall, Daniel; Cha, Judy J.; Chen, Zhihong; Han, Hyeuk-Jin; Hinkle, Christopher; Robinson, Joshua A.; Sundararaman, Ravishankar; Torsi, Riccardo
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Epitaxial MoCx: Competition between cubic δ-MoCy (111) and hexagonal β-Mo2C(0001)
errSURFACE & COATINGS TECHNOLOGY
IF6.1
err2021-08-01
err10
errOAAI
errFang, Peijiao; Wang, Baiwei; Gall, Daniel
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Research Directions

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Co-authors
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Yang Ren
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王剑 (Jian Wang)
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H
Humberto Terrones
H-index: 100 · Papers: 496
D
David G. Cahill
H-index: 96 · Papers: 555
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