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SaveShare Save Share Save Share Save Hardware implementation of memristor-based artificial neural networks
Aguirre, Fernando; Sebastian, Abu; Le Gallo, Manuel; Song, Wenhao; Wang, Tong; Yang, J. Joshua; Lu, Wei; Chang, Meng-Fan; Ielmini, Daniele; Yang, Yuchao; Mehonic, Adnan; Kenyon, Anthony; Villena, Marco A.; Roldan, Juan B.; Wu, Yuting; Hsu, Hung-Hsi; Raghavan, Nagarajan; Sune, Jordi; Miranda, Enrique; Eltawil, Ahmed; Setti, Gianluca; Smagulova, Kamilya; Salama, Khaled N.; Krestinskaya, Olga; Yan, Xiaobing; Ang, Kah-Wee; Jain, Samarth; Li, Sifan; Alharbi, Osamah; Pazos, Sebastian; Lanza, Mario Share Save Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devicesAguirre, F. L.; Piros, E.; Kaiser, N.; Vogel, T.; Petzold, S.; Gehrunger, J.; Hochberger, C.; Oster, T.; Hofmann, K.; Sune, J.; Miranda, E.; Alff, L. Share Save A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memoriesMaldonado, D.; Vinuesa, G.; Aldana, S.; Aguirre, F. L.; Cantudo, A.; Garcia, H.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, R.; Miranda, E.; Duenas, S.; Castan, H.; Roldan, J. B. Share Save Share Save Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devicesGarcia, H.; Vinuesa, G.; Garcia-Ochoa, E.; Aguirre, F. L.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.; Miranda, E.; Duenas, S.; Castan, H. Share Save Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontrollerPazos, Sebastian; Zheng, Wenwen; Zanotti, Tommaso; Aguirre, Fernando; Becker, Thales; Shen, Yaqing; Zhu, Kaichen; Yuan, Yue; Wirth, Gilson; Puglisi, Francesco Maria; Roldan, Juan Bautista; Palumbo, Felix; Lanza, Mario Share Save Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural NetworksAguirre, Fernando Leonel; Piros, Eszter; Kaiser, Nico; Vogel, Tobias; Petzold, Stephan; Gehrunger, Jonas; Oster, Timo; Hochberger, Christian; Sune, Jordi; Alff, Lambert; Miranda, Enrique Share Save Share Save Share Save Memristors with Initial Low-Resistive State for Efficient Neuromorphic SystemsZhu, Kaichen; Mahmoodi, Mohammad Reza; Fahimi, Zahra; Xiao, Yiping; Wang, Tao; Bukvisova, Kristyna; Kolibal, Miroslav; Roldan, Juan B.; Perez, David; Aguirre, Fernando; Lanza, Mario Share Save Share Save Standards for the Characterization of Endurance in Resistive Switching DevicesLanza, Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; Sune, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A.; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B.; Aguirre, Fernando; Palumbo, Felix; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang; Pey, Kin Leong; Raghavan, Nagarajan; Duenas, Salvador; Wang, Tao; Xia, Qiangfei; Pazos, Sebastian Share Save Share Save A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High-k, and Layered DielectricsPalumbo, Felix; Wen, Chao; Lombardo, Salvatore; Pazos, Sebastian; Aguirre, Fernando; Eizenberg, Moshe; Hui, Fei; Lanza, Mario Share Save Share Save 
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