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E

Erfan Abbasian

babol noshirvani university of technology

20H-index
66Paper Count
1.0KCitation Count
Published Papers 32
Publication Date
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An efficient ternary full adder design using carry-free ternary half adder and threshold detectors
errScientific Reports
IF3.9
err2026-08-09
err0
errOAAI
errShams Ul Haq; Alireza Aminzadeh; Amir Mohammad Karimi Forood; Maryam Nayeri; Deepika Bansal; Erfan Abbasian
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Design of a noise-immune ternary full adder using shifting operators for image processing applications
errResults in Engineering
IF7.9
err2026-07-09
err0
errOAAI
errShams Ul Haq; Erfan Abbasian; Abdolreza Darabi; Shaik Javid Basha; Deepika Bansal
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errSave
A CNTFET based process variation resilient SRAM design for stable low power and half select free operation
errScientific Reports
IF3.9
err2026-04-22
err0
errOAAI
errShams Ul Haq; Alireza Aminzadeh; Abdolreza Darabi; Erfan Abbasian; Owais Ahmad Shah; Vakkalakula Bharath Sreenivasulu
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errSave
Low Complexity, High-Performance Ternary Full Adder Using CNTFET Technology
errArabian Journal for Science and Engineering
IF2.9
err2026-01-29
err0
PREAI
errKm Umaira Dilshad; Shams Ul Haq; Erfan Abbasian; Sajad A. Loan
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errSave
Exact and Inexact Ternary Multipliers for Energy-Efficient Image Processing Applications with 32-nm CNTFETs
errIranian Journal of Science and Technology-Transactions of Electrical Engineering
IF1.4
err2026-01-01
err1
PREAI
errRani, Nalubolu Geetha; Balaji, Morasa; Basha, Shaik Javid; Sachdeva, Ashish; Abbasian, Erfan
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errSave
Circuit-level analysis of a novel ternary adder in ternary-enabled graphene nanoribbon FETs technology
errEngineering Research Express
IF1.6
err2025-12-31
err1
PREAI
errForood, Amir Mohammad Karimi; Nayeri, Maryam; Atashgah, Melikasadat Jalalat; Abbasian, Erfan
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errSave
A low-power 9T SRAM with half-selection resilient in carbon nanotube field-effect transistor technology for battery-operated systems
errPhysica Scripta
IF2.6
err2025-12-16
err0
PREAI
errMarziyeh Narouei; Ahmed Elbarbary; Appikatla Phani Kumar; Erfan Abbasian; Ashish Sachdeva
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errSave
Overcoming Silicon MOSFET Limitations with Chirality-Engineered CNTFETs: A Ternary Half Adder Demonstration for Next-Generation Nanoelectronics
errSilicon
IF3.3
err2025-12-01
err0
PREAI
errShams Ul Haq; Erfan Abbasian; Tabassum Khurshid; Abdolreza Darabi; Pavan Kumar Mukku; Vijay Kumar Sharma
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errSave
Comparative evaluation of robust low-power SRAM architectures
errENGINEERING RESEARCH EXPRESS
IF1.6
err2025-09-30
err1
PREAI
errAbbasian, Erfan; Ul Haq, Shams; Pavan Kumar, Mukku; Birla, Shilpi
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errSave
A power/energy-efficient 8T SRAM with reduced minimum operation voltage
errPhysica Scripta
IF2.6
err2025-08-08
err0
PREAI
errShams Ul Haq; Erfan Abbasian; Tabassum Khurshid
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errSave
A stable, low-power SRAM cell with half-select immunity in CNTFET technology
erraeu international journal of electronics and communications
IF0
err2025-05-31
err0
PREAI
errShams Ul Haq; Erfan Abbasian; Alireza Asadi; Maedeh Orouji; Sobhan Sofimowloodi; Abdolreza Darabi
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errSave
Synthesis of a CNTFET-Based Ternary Full Adder Using a Carry-Less Ternary Half Adder
errIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IF2.9
err2025-05-13
err0
PREAI
errShams Ul Haq; Erfan Abbasian; Maedeh Orouji; Sajad A. Loan; Tabassum Khurshid
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errSave
Energy-Efficient Buffer-Based Ternary SRAM Cell With Application to Image Processing
errIEEE Access
IF3.6
err2025-01-01
err0
PREAI
errShams Ul Haq; Erfan Abbasian; Abdolreza Darabi; Imran Ahmed Khan; Owais Ahmad Shah; Vakkalakula Bharath Sreenivasulu
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errSave
A highly-efficient ternary-capable GNRFETs-based three-valued half adder circuit using unary operators
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2024-08-01
err1
PREAI
errAbbasian, Erfan; Elbarbary, Ahmed
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errSave
Tri-state GNRFET-based fast and energy-efficient ternary multiplier
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2024-04-01
err2
PREAI
errUl Haq, Shams; Abbasian, Erfan; Khurshid, Tabassum; Fathi, Hanaa; Sharma, Vijay Kumar
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An energy-efficient design of ternary SRAM using GNRFETs
errINTERNATIONAL JOURNAL OF ELECTRONICS
IF1.1
err2024-02-05
err5
PREAI
errOrouji, Maedeh; Abbasian, Erfan; Gholipour, Morteza
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errSave
Energy-Efficient High-Speed dynamic logic-based One-Trit multiplier in CNTFET technology
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2024-02-01
err8
PREAI
errUl Haq, Shams; Abbasian, Erfan; Sharma, Vijay Kumar; Khurshid, Tabassum; Fathi, Hanaa
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errSave
An efficient GNRFET-based circuit design of ternary half-adder
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2023-10-01
err11
PREAI
errAbbasian, Erfan; Orouji, Maedeh; Anvari, Sana Taghipour
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errSave
A low-power SRAM design with enhanced stability and ION/IOFF ratio in FinFET technology for wearable device applications
errINTERNATIONAL JOURNAL OF ELECTRONICS
IF1.1
err2023-07-25
err5
PREAI
errAbbasian, Erfan; Birla, Shilpi; Sachdeva, Ashish; Mani, Elangovan
errShare
errSave
GNRFET- and CNTFET-Based Designs of Highly Efficient 22 T Unbalanced Single-Trit Ternary Multiplier Cell
errinternational journal of engineering science
IF2.9
err2023-07-09
err12
PREAI
errAbbasian, Erfan; Aminzadeh, Alireza; Taghipour Anvari, Sana
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errSave

Research Directions

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Co-authors
Cooperation Journals
A
A. A. EL‐BARBARY
H-index: 23 · Papers: 154
S
Sajad A. Loan
H-index: 21 · Papers: 154
M
Morteza Gholipour
H-index: 20 · Papers: 64
A
Ashish Sachdeva
H-index: 18 · Papers: 61
A
Abdolreza Darabi
H-index: 14 · Papers: 38
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