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SaveComparative Investigation on Robustness of 650-V p-GaN Gate HEMTs Under HTRB Beyond 150 °C and Device Failure Mechanisms
Zhou, Jinggui; Tang, Lei; Qiu, Binju; Gao, Huan; Huang, Shuting; Zhu, Jianggen; Yang, Ning; Chen, Kuangli; Zhang, Bo; Zhou, Qi
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