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R

R. Quay

fraunhofer gesellschaft

35H-index
487Paper Count
5.8KCitation Count
Published Papers 29
Publication Date
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Back-Gated GaN-on-Si HEMTs in Multistage Cascodes
errIEEE Transactions on Electron Devices
IF3.2
err2026-06-17
err0
errOAAI
errRichard Reiner; Fouad Benkhelifa; Michael Basler; Stefan Moench; Daniel Fugmann; Patrick Waltereit; Stefan Müller; Rüdiger Quay
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A D-Band GaN Power Amplifier With 28-dBm Psat, a Power Density of 0.2 W/mm2, and Loss-Optimized Matching Networks
errIEEE Microwave and Wireless Technology Letters
IF3.4
err2026-04-01
err1
PREAI
errZieciak, Thomas; Neininger, Philipp; Friesicke, Christian; Bruckner, Peter; Quay, Rudiger
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Demonstration of E/D-Mode Logic Circuits in a Four-Pole 20-nm InGaAs HEMT-on-Silicon Technology Using Back-Gate Biasing
errIEEE Electron Device Letters
IF4.5
err2026-02-26
err0
PREAI
errAlen Sebastian; Konstantin Kuliabin; Maxime Moulin; Sébastien Chartier; Felix Heinz; Dirk Schwantuschke; Arnulf Leuther; Rüdiger Quay
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Continuous Current Sensing GaN Half-Bridge ICs
errIEEE Open Journal of Power Electronics
IF3.9
err2026-01-27
err0
errOAAI
errStefan Mönch; Michael Basler; Jörg Haarer; Richard Reiner; Rüdiger Quay
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On the Impact of the Barrier Design, Carrier Density, and Temperature on High-Field Transport Properties in GaN-Based Heterostructures
errIEEE Transactions on Electron Devices
IF3.2
err2026-01-13
err0
PREAI
errPhilipp Döring; Sebastian Krause; Rüdiger Quay
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AlScN/GaN Multichannel Heterostructures Grown by Metal–Organic Chemical Vapor Deposition
errAdvanced Materials Interfaces
IF4.4
err2025-10-20
err0
errOAAI
errTeresa Duarte; Isabel Streicher; Patrik Straňák; Lutz Kirste; Mario Prescher; Niklas Wolff; Susanne Beuer; Lorenz Kienle; Rüdiger Quay; Stefano Leone
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Self-Compatible Transistors in GaN-on-Si Technology for High-Voltage Cascodes
errIEEE Transactions on Electron Devices
IF3.2
err2025-10-03
err0
errOAAI
errRichard Reiner; Patrick Waltereit; Michael Basler; Daniel Grieshaber; Stefan Mönch; Rüdiger Quay
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Normally-Off, Quasi-Vertical GaN FinFETs on Sapphire Substrates With Fin Widths Structured by i-Line Lithography in the 100 nm Range
errIEEE Electron Device Letters
IF4.5
err2025-07-01
err0
PREAI
errMatthias Sinnwell; Michael Dammann; Rachid Driad; Michael Mikulla; Stefan Müller; Rüdiger Quay
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High-contrast absorption magnetometry in the visible to near-infrared range with nitrogen-vacancy ensembles
errOPTICS EXPRESS
IF3.3
err2025-01-23
err0
errOAAI
errSchall, Florian; Hahl, Felix a.; Lindner, Lukas; Vidal, Xavier; Luo, Tingpeng; Zaitsev, Alexander m.; Ohshima, Takeshi; Jeske, Jan; Quay, Ruediger
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Dual-media laser system: Nitrogen vacancy diamond and red semiconductor laser
errSCIENCE ADVANCES
IF12.5
err2024-09-27
err0
errOAAI
errLindner, Lukas; Hahl, Felix A.; Luo, Tingpeng; Antonio, Guillermo Nava; Vidal, Xavier; Rattunde, Marcel; Ohshima, Takeshi; Sacher, Joachim; Sun, Qiang; Capelli, Marco; Gibson, Brant C.; Greentree, Andrew D.; Quay, Ruediger; Jeske, Jan
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Impact of string connection and contact defects on electrical current distribution in solar cells and modules: A model validated by magnetic field imaging
errPROGRESS IN PHOTOVOLTAICS
IF7.6
err2024-05-28
err0
errOAAI
errTummalieh, Ammar; Mittag, Max; Weber, Julian; Yucebas, Damla; Schaefer, Levin; Quay, Ruediger; Reichel, Christian; Neuhaus, Holger
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A 100-300 GHz Attenuator-Based Ultrawideband Vector Modulator
errIEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
IF4
err2024-05-01
err0
PREAI
errKuliabin, Konstantin; Maurette-Blasini, Cristina; Lozar, Roger; Chartier, Sebastien; Leuther, Arnulf; Quay, Rudiger
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Efficient Talkative Power Conversion With Quasi-Square-Wave Zero-Voltage Switching Hysteretic Current Control
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2023-10-01
err2
errOAAI
errMonch, Stefan; Kuring, Carsten; Geng, Xiaomeng; Hoeher, Peter A.; Liserre, Marco; Quay, Rudiger; Dieckerhoff, Sibylle
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Three-Phase Motor Inverter and Current Sensing GaN Power IC
errSENSORS
IF3.5
err2023-07-19
err1
errOAAI
errMoench, Stefan; Reiner, Richard; Basler, Michael; Grieshaber, Daniel; Benkhelifa, Fouad; Waltereit, Patrick; Quay, Ruediger
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Voltage-margin limiting mechanisms of AlScN-based HEMTs
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-07-17
err6
PREAI
errDoering, P.; Krause, S.; Waltereit, P.; Brueckner, P.; Leone, S.; Streicher, I.; Mikulla, M.; Quay, R.
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errSave
Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Deposition
errCRYSTAL GROWTH & DESIGN
IF3.4
err2023-01-05
err13
PREAI
errStreicher, Isabel; Leone, Stefano; Manz, Christian; Kirste, Lutz; Prescher, Mario; Waltereit, Patrick; Mikulla, Michael; Quay, Rudiger; Ambacher, Oliver
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Monolithically Integrated GaN Gate Drivers-A Design Guide
errIEEE OPEN JOURNAL OF POWER ELECTRONICS
IF3.9
err2023-01-01
err10
errOAAI
errBasler, Michael; Deneke, Niklas; Moench, Stefan; Reiner, Richard; Wicht, Bernhard; Quay, Ruediger
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GaN Active Rectifier Diode
errIEEE OPEN JOURNAL OF POWER ELECTRONICS
IF3.9
err2022-01-01
err1
errOAAI
errBasler, Michael; Reiner, Richard; Moench, Stefan; Waltereit, Patrick; Quay, Rudiger
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Broadband 400-GHz InGaAs mHEMT Transmitter and Receiver S-MMICs
errIEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
IF4
err2021-11-01
err16
errOAAI
errGashi, Bersant; John, Laurenz; Meier, Dominik; Roesch, Markus; Wagner, Sandrine; Tessmann, Axel; Leuther, Arnulf; Ambacher, Oliver; Quay, Ruediger
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PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2021-01-01
err23
errOAAI
errMoench, Stefan; Reiner, Richard; Waltereit, Patrick; Benkhelifa, Fouad; Hueckelheim, Jan; Meder, Dirk; Zink, Martin; Kaden, Thomas; Noll, Stefan; Mansfeld, Sebastian; Mingirulli, Nicola; Quay, Ruediger; Kallfass, Ingmar
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Research Directions

No research directions
Co-authors
Cooperation Journals
M
Marco Liserre
H-index: 91 · Papers: 937
O
O. Ambacher
H-index: 73 · Papers: 964
T
Takeshi Ohshima
H-index: 61 · Papers: 1.0K
L
Lorenz Kienle
H-index: 59 · Papers: 578
A
Andrew D. Greentree
H-index: 54 · Papers: 409
View more