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SaveShare Save Share Save Share Save 830 nm-Excitable Triplet-Triplet Annihilation Upconversion Achieved by a Selenium-Integrated Heptamethine Cyanine Sensitizer
Guo, Dong-Xue; Jiang, Lin-Han; Chu, Shaowen; Sha, Yulin; Li, Ying-Ze; Li, Ran; Li, Jia-Yao; Yang, Yu-Qian; Zhang, Ming-Yu; Feng, Hong-Juan; Zhang, Zi-Hui; Huang, Ling Share Save Share Save Share Save Optical Polarization Modulation for AlGaN-Based Far-UVC MQWs by Built-in Electric Field RegulationWang, Xianjun; Jiang, Ke; Liu, Kexi; Zhang, Zi-Hui; Wang, Bingxiang; Zhang, Shanli; Ben, Jianwei; Lu, Shunpeng; Sun, Xiaojuan; Li, Dabing Share Save Share Save Share Save Share Save Enhancing the light output power of deep ultraviolet light-emitting diodes with a ultra-thin p-type layer through etching non-ohmic contact p-GaN regionQiu, Hualiang; Wang, Linhao; Guo, Yanan; Guo, Kai; Zhang, Xiaona; Jia, Xiaolong; Shen, Congmin; Zhang, Tong; Sun, Xue-Jiao; Wei, Xuecheng; Wang, Shen; Wang, Junxi; Li, Jinmin; Zhang, Yonghui; Zhang, Zi-Hui; Liu, Naixin; Yan, Jianchang Share Save Share Save Share Save Share Save Share Save Share Save Physical Model Development for Fabricating MIS-Anode-Based 1100 V AlGaN/GaN-Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage CurrentHe, JT; Wang, ZZ; Huang, FP; Chu, CS; Tian, KK; Cai, ST; Zhang, YH; Sun, XJ; Li, DB; Sun, XW; Zhang, ZH Share Save Share Save Share Save 
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