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S

S. J. Pearton

university of florida

115H-index
2.9KPaper Count
8.2WCitation Count
Published Papers 563
Publication Date
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Mitigating sidewall damage effects in GaN-based multi-quantum-well micro-LEDs prepared by top–down fabrication
errJournal of Physics D: Applied Physics
IF3.2
err2026-04-07
err0
errOAAI
errIn-Hwan Lee; Alexander Y Polyakov; Taehwan Kim; Yeong-Hoon Cho; Lee-Woon Jang; Eugene B Yakimov; Luiza A Alexanyan; Ivan V Shchemerov; Anton A Vasilev; Stephen J Pearton
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errSave
Effect of Schottky Metal Contacts on Barrier Heights of Vertical p-type Diamond Rectifiers, with an ITO/Diamond Heterojunction Benchmark
errECS Journal of Solid State Science and Technology
IF2.2
err2026-01-01
err0
PREAI
errWan, Hsiao-Hsuan; Ren, Fan; Pearton, Stephen J.
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errSave
Al composition dependence of band alignment in NiO/(AlxGa1-x)2O3 heterojunctions
errJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
IF2.1
err2025-12-01
err0
PREAI
errWan, Hsiao-Hsuan; Ren, Fan; Chou, Ta-Shun; Anooz, Saud Bin; Pearton, Stephen J.
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errSave
Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga2O3
errACS NANO
IF16
err2025-12-01
err0
PREAI
errLabed, Madani; Shin, Kanghee; Shaikh, Mohammad Tauquir A. S.; Park, Jang Hyeok; Cheon, Yu Jun; Park, Bo-In; Pearton, Stephen J.; Rim, You Seung
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errSave
Cl2/Ar and Cl2/O2 Inductively Coupled Plasma Etching of (-201) β-Ga2O3
errELECTRONIC MATERIALS LETTERS
IF2.6
err2025-11-01
err0
PREAI
errChoi, Byoung Su; Chae, Ki Hun; Hwang, Sungu; Kim, Jin Kon; Lee, Byeong Woo; Ryu, Jeong Ho; Pearton, Stephen J.; Cho, Hyun
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errSave
Deep Traps in Ga2O3 Schottky Diodes Induced by Soft Electric Breakdown
errMater. Adv.
IF0
err2025-10-17
err0
errOAAI
errAlexander Y Polyakov; Ivan Schemerov; Eugene Borisovich Yakimov; A. V. Chernykh; Sergey V. Chernykh; A. A. Vasilev; N Matros; Andrey A. Romanov; Luiza Alexanyan; Eugene E Yakimov; Stephen Pearton
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Fully Transparent Lateral AlN Schottky Barrier Diodes with ITO Contacts
errECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
IF2.2
err2025-10-01
err0
PREAI
errWan, Hsiao-Hsuan; Chiang, Chao-Ching; Ren, Fan; Pearton, Stephen J.
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errSave
Room Temperature Rejuvenation Technology for Irradiated Gallium Nitride Transistors
errAdvanced Materials Technologies
IF6.2
err2025-09-08
err0
errOAAI
errMd Hafijur Rahman; Nahid Sultan Al-Mamun; Sergei P. Stepanoff; Aman Haque; Fan Ren; Stephen J. Pearton; Douglas E. Wolfe
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errSave
Overcoming material limitations progresses of gallium oxide for power devices applications: A review
errmaterials today advances
IF22
err2025-08-16
err0
PREAI
errMadani Labed; Chowdam Venkata Prasad; Ho Jung Jeon; Kyong Jae Kim; Jang Hyeok Park; Stephen Pearton; You Seung Rim
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errSave
Comprehensive study of high stability AlN based solar blind MSM photodetectors with Ti/Au contacts
errj mater chem a
IF0
err2025-08-08
err0
PREAI
errMadani Labed; Hsiao-Hsuan Wan; Jang Hyeok Park; Ho Jung Jeon; Fan Ren; Stephen J. Pearton; You Seung Rim
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errSave
Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance
errMRS Bulletin
IF4.9
err2025-08-08
err0
errOAAI
errSergei Pavlovich Stepanoff; Ani Khachatrian; Nahid Sultan Al-Mamun; Fernando Camino; Jordan Meyet; Aman Haque; Fan Ren; Stephen J. Pearton; Douglas E. Wolfe
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errSave
Commensurate, Incommensurate, and Reconstructed Structures of Multilayer Transition Metal Dichalcogenide and Their Applications (Small 30/2025)
errSmall
IF12.1
err2025-07-29
err0
PREAI
errHyun-Geun Oh; Younghyun You; Seungyun Lee; Sangheon Lee; Fan Ren; Stephen J. Pearton; Jihyun Kim; Gwan-Hyoung Lee
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errSave
Band alignment of indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) on non-hydrogenated and H-terminated (100) diamond
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-05-23
err0
errOAAI
errWan, Hsiao-Hsuan; Chiang, Chao-Ching; Li, Jian-Sian; Ren, Fan; Pearton, Stephen J.
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errSave
Enhanced Leakage Current and On-Resistance of β Gallium Oxide Schottky Barrier Diodes Using Effective Surface Modification
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2025-04-21
err0
PREAI
errJeon, HJ; Labed, M; Park, JH; Prasad, CV; Pearton, SJ; Rim, YS
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errSave
Commensurate, Incommensurate, and Reconstructed Structures of Multilayer Transition Metal Dichalcogenide and Their Applications
errSMALL
IF12.1
err2025-03-19
err0
PREAI
errHyun-Geun Oh; Younghyun You; Seungyun Lee; Sangheon Lee; Fan Ren; Stephen J. Pearton; Jihyun Kim; Gwan-Hyoung Lee
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errSave
700 V breakdown vertical diamond Schottky rectifier with power figure of merit 30.5 MW⋅cm-2
errDIAMOND AND RELATED MATERIALS
IF5.1
err2025-02-01
err0
PREAI
errChiang, Chao-Ching; Li, Jian-Sian; Wan, Hsiao-Hsuan; Ren, Fan; Pearton, Stephen J.
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kV-class vertical p-n heterojunction rectifier based on ITO/diamond
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-27
err0
PREAI
errWan, Hsiao-Hsuan; Chiang, Chao-Ching; Li, Jian-Sian; Ren, Fan; Pearton, Stephen J.
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errSave
Van der Waals epitaxy and beyond for monolithic 3D integration
err2D MATERIALS
IF4.3
err2025-01-23
err0
PREAI
errKim, H; Bae, J; Pearton, SJ; Ren, F; Kim, J; Lee, GH
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errSave
Enhancing radiation hardness of microelectronics through stress-relief milling
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-21
err0
PREAI
errStepanoff, Sergei P.; Khachatrian, Ani; Haque, Aman; Ren, Fan; Pearton, Stephen; Wolfe, Douglas E.
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errSave
Rutile germanium dioxide: An emerging ultrawide bandgap semiconductor for power device applications - A review
errmaterials today advances
IF22
err2025-01-01
err1
PREAI
errLabed, Madani; Jeon, Ho Jung; Park, Jang Hyeok; Pearton, S. J.; Rim, You Seung
errShare
errSave

Research Directions

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Co-authors
Cooperation Journals
邹
邹进 (Jin Zou)
H-index: 114 · Papers: 1.3K
F
F. Ren
H-index: 94 · Papers: 2.0K
D
David J. Smith
H-index: 87 · Papers: 2.3K
M
Marius Grundmann
H-index: 86 · Papers: 999
K
Kuei‐Hsien Chen
H-index: 83 · Papers: 778
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