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A parallel computing-in-memory accelerator utilizing FeRAM array with retention loss correction Liu, Can; Shen, Zhihao; Mao, Wei; Li, Bo; Lv, Xiaomeng; Li, Fuyi; Xiao, Peng; Hong, Haiqiao; Zhao, Shirui; Zheng, Siying; Li, Xiaoxi; Yu, Xiao; Zhou, Jiuren; Chen, Bing; Liu, Yan; Han, Genquan Share Save
Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition Li, Yang; Yao, Danyang; Liu, Yan; Jiang, Zhi; Wang, Ruiqing; Ran, Xu; Zhou, Jiuren; Wang, Qikun; Wu, Guoqiang; Han, Genquan Share Save
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Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2 Zhang, Fan; Luo, Zheng-Dong; Yang, Qiyu; Zhou, Jiuren; Wang, Jin; Zhang, Zhaohao; Fan, Qikui; Peng, Yue; Wu, Zhenhua; Liu, Fei; Chen, Shiyou; He, Dongsheng; Yin, Huaxiang; Han, Genquan; Liu, Yan; Hao, Yue Share Save
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Review of Si-Based GeSn CVD Growth and Optoelectronic Applications Miao, Yuanhao; Wang, Guilei; Kong, Zhenzhen; Xu, Buqing; Zhao, Xuewei; Luo, Xue; Lin, Hongxiao; Dong, Yan; Lu, Bin; Dong, Linpeng; Zhou, Jiuren; Liu, Jinbiao; Radamson, Henry H. Share Save
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Low Voltage Operating 2D MoS2Ferroelectric Memory Transistor with Hf1-xZrxO2Gate Structure Zhang, Siqing; Liu, Yan; Zhou, Jiuren; Ma, Meng; Gao, Anyuan; Zheng, Binjie; Li, Lingfei; Su, Xin; Han, Genquan; Zhang, Jincheng; Shi, Yi; Wang, Xiaomu; Hao, Yue Share Save
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