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Andrew Armstrong

united states department of energy (doe)

38H-index
303Paper Count
5.7KCitation Count
Published Papers 42
Publication Date
Optical characterization of deep-level defects in n-type AlxInyGa1-x-yP for the development of solid-state photomultiplier analogs
err2025-11-30
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PREAI
errArmstrong, Andrew M.; Anderson, Evan M.; Caravello, Lisa N.; Garcia, Eduardo; Klesko, Joseph P.; Hawkins, Samuel D.; Shaner, Eric A.; Klem, John F.; Muhowski, Aaron J.
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Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10<sup>4</sup>
err2025-11-25
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PREAI
errJames Spencer Lundh; Brianna A. Klein; Andrew A. Allerman; Andrew J. Cantrell; Alfred Zhao; Daniel J. Pennachio; GlenAsia Gonzalez; Eric Cruz; Tolen M. Nelson; Geoffrey M. Foster; Alan G. Jacobs; Andrew D. Koehler; Marko J. Tadjer; Giovanni Esteves; Roy H. Olsson; Andrew M. Armstrong; Karl D. Hobart; Michael A. Mastro
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Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN
err2025-02-11
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PREAI
errZhu, Yinxuan; Allerman, Andrew A.; Joishi, Chandan; Pratt, Jonathan; Xavier, Agnes Maneesha Dominic Merwin; Ortiz, Gabriel Calderon; Klein, Brianna A.; Armstrong, Andrew; Hwang, Jinwoo; Rajan, Siddharth
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Delivering safe admission avoidance via comprehensive geriatric assessment under an emergency department frailty service
err2025-01-30
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PREAI
errGalbraith, M.; Irvine, L.; Stevenson, J.; Barugh, A.; Reynish, E.; Armstrong, C.; Armstrong, A.; Clancy, U.
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Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor
err2024-05-30
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errOAAI
errRahman, Sheikh Ifatur; Awwad, Mohammad; Joishi, Chandan; Jamal-Eddine, Zane; Gunning, Brendan; Armstrong, Andrew; Rajan, Siddharth
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Al-Rich AlGaN Transistors with Regrown p-AlGaN Gate Layers and Ohmic Contacts
err2024-03-29
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errOAAI
errKlein, Brianna; Allerman, Andrew; Armstrong, Andrew; Rosprim, Mary; Tyznik, Colin; Zhu, Yinxuan; Joishi, Chandan; Chae, Chris; Rajan, Siddharth
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Influence of trap-assisted and intrinsic Auger-Meitner recombination on efficiency droop in green InGaN/GaN LEDs
err2023-09-12
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errOAAI
errLi, Xuefeng; Dejong, Elizabeth; Armitage, Rob; Armstrong, Andrew M.; Feezell, Daniel
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Etched-And-Regrown GaN P-N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching
err2021-10-27
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PREAI
errLi, Bingjun; Wang, Sizhen; Nami, Mohsen; Armstrong, Andrew M.; Han, Jung
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High-resolution planar electron beam induced current in bulk diodes using high-energy electrons
err2021-07-07
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errOAAI
errWarecki, Zoey; Allerman, Andrew A.; Armstrong, Andrew M.; Talin, A. Alec; Cumings, John
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Low voltage drop tunnel junctions grown monolithically by MOCVD
err2021-02-02
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errOAAI
errJamal-Eddine, Zane; Hasan, Syed M. N.; Gunning, Brendan; Chandrasekar, Hareesh; Crawford, Mary; Armstrong, Andrew; Arafin, Shamsul; Rajan, Siddharth
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All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions
err2021-01-29
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errOAAI
errHasan, Syed M. N.; Gunning, Brendan P.; J-Eddine, Zane; Chandrasekar, Hareesh; Crawford, Mary H.; Armstrong, Andrew; Rajan, Siddharth; Arafin, Shamsul
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Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs
err2020-08-04
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errOAAI
errJamal-Eddine, Zane; Hasan, Syed M. N.; Gunning, Brendan; Chandrasekar, Hareesh; Crawford, Mary; Armstrong, Andrew; Arafin, Shamsul; Rajan, Siddharth
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Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
err2019-10-09
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errOAAI
errLundh, James Spencer; Chatterjee, Bikramjit; Song, Yiwen; Baca, Albert G.; Kaplar, Robert J.; Beechem, Thomas E.; Allerman, Andrew A.; Armstrong, Andrew M.; Klein, Brianna A.; Bansal, Anushka; Talreja, Disha; Pogrebnyakov, Alexej; Heller, Eric; Gopalan, Venkatraman; Redwing, Joan M.; Foley, Brian M.; Choi, Sukwon
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Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate
err2019-05-22
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errOAAI
errArmstrong, Andrew M.; Klein, Brianna A.; Allerman, Andrew A.; Baca, Albert G.; Crawford, Mary H.; Podkaminer, Jacob; Perez, Carlos R.; Siegal, Michael P.; Douglas, Erica A.; Abate, Vincent M.; Leonard, Francois
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Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment
err2019-03-19
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PREAI
errKlein, Brianna A.; Douglas, Erica A.; Armstrong, Andrew M.; Allerman, Andrew A.; Abate, Vincent M.; Fortune, Torben R.; Baca, Albert G.
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AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AIN
err2019-02-05
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PREAI
errArmstrong, Andrew M.; Klein, Brianna A.; Baca, Albert G.; Allerman, Andrew A.; Douglas, Erica A.; Colon, Albert; Abate, Vincent M.; Fortune, Torben R.
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Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
err2018-02-15
err75
PREAI
errZhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth
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Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
err2017-08-02
err58
errOAAI
errZhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Johnson, Jared M.; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth
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