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H
Hock Jin Quah
universiti sains malaysia
21
H-index
99
Paper Count
1.3K
Citation Count
0
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Published Papers
49
Publication Date
Publication Date
Impact Factor
Citations
Engineering Dielectric Constant and Breakdown Strength in Tm2O3 Thin Films through Nitrogen-Controlled Two-Step Annealing
Ceramics International
IF
5.6
2026-05-08
0
PRE
AI
Junchen Deng; Ashraf Mohamad Gaos; Hock Jin Quah
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Tailoring Ag nanoparticles via PLAL laser energy for high-performance GaN MSM UV photodetectors
Optical Materials
IF
4.2
2025-11-22
0
PRE
AI
Momin S.M. Abutawahina; S.S. Ng; T.K. Wang; H.J. Quah; Naser M. Ahmed
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Laser-driven synthesis of GaN nanoparticles for next-generation optoelectronics: from thin-film ablation to enhanced photodetector functionality
Optics & Laser Technology
IF
0
2025-10-16
0
PRE
AI
Momin S.M. Abutawahina; S.S. Ng; T.K. Wang; H.J. Quah; Naser M. Ahmed; M.F.I. Abdul Malik
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Comparative study of growth and properties of nitrogen-oxygen-nitrogen annealed gallium oxide; cerium gallium oxide; and gallium cerium oxide films
Physica Scripta
IF
2.6
2025-10-08
0
PRE
AI
Puteri Haslinda Megat Abdul Hedei; Zainuriah Hassan; Sha Shiong Ng; Hock Jin Quah
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Post-rapid thermal annealing time-dependent engineering of gallium oxide/gallium nitride heterostructures for enhanced optoelectronic performance
Optical Materials
IF
4.2
2025-09-03
0
PRE
AI
A. Muhammad; S.S. Ng; H.J. Quah; N.A. Hamzah; Momin S.M. Abutawahina; Ibrahim Garba Shitu
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Experimental and simulation analyses of bulk GaN-based metal-semiconductor-metal ultraviolet photodetectors
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF
4.6
2025-05-13
0
PRE
AI
Abutawahina, Momin S. M.; Abbas, A. M. Alghareeb; Hamzah, N. A.; Ng, S. S.; Quah, H. J.; Ahmed, Naser M.; Shaveisi, M.
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Controlled Growth Temperatures of High Dielectric Constant Gallium Cerium Oxide Layer on 4H-Silicon Carbide Substrate
INTERNATIONAL JOURNAL OF ENERGY RESEARCH
IF
4.2
2025-05-05
0
OA
AI
Musliyarakath, Abdul Shekkeer Kammutty; Cheong, Kuan Yew; Quah, Hock Jin
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Dual step growth of gallium cerium oxide passivation layer Co-sputtered on 4H-silicon carbide
Ceramics International
IF
5.6
2025-05-05
0
PRE
AI
Puteri Haslinda Megat Abdul Hedei; Zainuriah Hassan; Hock Jin Quah
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Synergistic Effects of Nitrogen-Oxygen-Nitrogen, Forming Gas-Oxygen-Forming Gas, and Argon-Oxygen-Argon Annealing Ambient on the Structural and Electrical Characteristics of Thulium Oxide Passivation Layers on Silicon Substrate
INTERNATIONAL JOURNAL OF ENERGY RESEARCH
IF
4.2
2025-02-02
1
OA
AI
Deng, Junchen; Quah, Hock Jin
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Photoresponse characteristics of bulk gallium nitride schottky barrier metal-semiconductor-metal ultraviolet photodetectors
SENSORS AND ACTUATORS A-PHYSICAL
IF
4.9
2024-12-01
0
PRE
AI
Abutawahina, Momin S. M.; Mohammed, Alghareeb Abbas Abdulhussein; Hamzah, N. A.; Ng, S. S.; Quah, H. J.; Ahmed, N. M.; Shaveisi, M.
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Surface passivation of silicon substrate by ternary GaxCeyOz layers grown via combination of forming gas and oxygen at different temperatures
CERAMICS INTERNATIONAL
IF
5.6
2024-07-01
0
PRE
AI
Musliyarakath, Abdul Shekkeer Kammutty; Cheong, Kuan Yew; Quah, Hock Jin
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Structural, chemical, and metal-oxide-semiconductor characteristics of RF magnetron sputtered thulium oxide passivation layer on 4H-silicon carbide substrate
APPLIED SURFACE SCIENCE
IF
6.9
2024-06-01
2
PRE
AI
Deng, Junchen; Wang, Yongkai; Quah, Hock Jin
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Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor
INTERNATIONAL JOURNAL OF ENERGY RESEARCH
IF
4.2
2024-02-16
4
OA
AI
Shekkeer, Kammutty Musliyarakath Abdul; Cheong, Kuan Yew; Quah, Hock Jin
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Growth of gallium cerium oxide passivation layer on 4H-Silicon carbide substrate and its metal-oxide-semiconductor characteristics
CERAMICS INTERNATIONAL
IF
5.6
2024-01-01
1
OA
AI
Musliyarakath, Abdul Shekkeer Kammutty; Cheong, Kuan Yew; Quah, Hock Jin
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Impact of varying wet oxidation temperature in the presence of nitrogen flow on hafnium tantalum oxide films
CERAMICS INTERNATIONAL
IF
5.6
2023-12-01
2
PRE
AI
Lim, Way Foong; Quah, Hock Jin
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Alteration in growth temperatures of metal-organic decomposed GaxCe1-xOyNz passivation layer in nitrogen/oxygen/nitrogen ambient
CERAMICS INTERNATIONAL
IF
5.6
2023-05-01
4
PRE
AI
Shekkeer, Kammutty Musliyarakath Abdul; Deng, Junchen; Cheong, Kuan Yew; Riyas, Kadiarakath Manathparambil; Quah, Hock Jin
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Effects of post-deposition annealing temperatures in argon ambient on structural, optical, and electrical characteristics of RF magnetron sputtered gallium oxide films
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
IF
6.6
2023-01-01
11
OA
AI
Hedei, Puteri Haslinda Megat Abdul; Hassan, Zainuriah; Quah, Hock Jin
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Effects of post-deposition annealing of cerium oxide passivation layer in nitrogen-oxygen-nitrogen ambient
INTERNATIONAL JOURNAL OF ENERGY RESEARCH
IF
4.2
2022-06-03
17
PRE
AI
Abdul Shekkeer, Kammutty Musliyarakath; Cheong, Kuan Yew; Quah, Hock Jin
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Growth of metal-organic decomposed ternary GaxCeyOz films by nitrogen-infused wet oxidation for metal-oxide-semiconductor capacitor
INTERNATIONAL JOURNAL OF ENERGY RESEARCH
IF
4.2
2021-11-28
3
OA
AI
Tan, Kar Yeow; Quah, Hock Jin
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Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal-oxide semiconductor application
INTERNATIONAL JOURNAL OF ENERGY RESEARCH
IF
4.2
2021-11-14
3
OA
AI
Lim, Way Foong; Quah, Hock Jin
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Research Directions
No research directions
Co-authors
Cooperation Journals
Z
Z. Hassan
H-index: 48 · Papers: 768
K
Khamirul Amin Matori
H-index: 46 · Papers: 311
N
Naser M. Ahmed
H-index: 41 · Papers: 396
K
Kuan Yew Cheong
H-index: 38 · Papers: 318
F
F.K. Yam
H-index: 34 · Papers: 304
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