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SaveFeGa (0/-) acceptor level as a reference energy level in dilute AlxGa1-xN
Kruszewski, P.; Plesiewicz, J.; Grzanka, Sz.; Grzanka, E.; Prystawko, P.; Markevich, V. P.; Peaker, A. R.; Sun, L.; Dawe, C. A.; Halsall, M. P.
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SaveHighly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
Schiliro, Emanuela; Giannazzo, Filippo; Di Franco, Salvatore; Greco, Giuseppe; Fiorenza, Patrick; Roccaforte, Fabrizio; Prystawko, Pawel; Kruszewski, Piotr; Leszczynski, Mike; Cora, Ildiko; Pecz, Bela; Fogarassy, Zsolt; Lo Nigro, Raffaella
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SaveStructural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
Schiliro, Emanuela; Giannazzo, Filippo; Bongiorno, Corrado; Di Franco, Salvatore; Greco, Giuseppe; Roccaforte, Fabrizio; Prystawko, Pawel; Kruszewski, Piotr; Leszczynski, Mike; Krysko, Marcin; Michon, Adrien; Cordier, Yvon; Cora, Ildiko; Pecz, Bela; Gargouri, Hassan; Lo Nigro, Raffaella
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SaveElectrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate
Kruszewski, P.; Prystawko, P.; Grabowski, M.; Sochacki, T.; Sidor, A.; Bockowski, M.; Jasinski, J.; Lukasiak, L.; Kisiel, R.; Leszczynski, M.
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SaveElectrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications
Cywinski, G.; Yahniuk, I.; Kruszewski, P.; Grabowski, M.; Nowakowski-Szkudlarek, K.; Prystawko, P.; Sai, P.; Knap, W.; Simin, G. S.; Rumyantsev, S. L.
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SaveHafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition
Krajewski, Tomasz A.; Luka, Grzegorz; Gieraltowska, Sylwia; Zakrzewski, Adam J.; Smertenko, Petro S.; Kruszewski, Piotr; Wachnicki, Lukasz; Witkowski, Bartlomiej S.; Lusakowska, Elzbieta; Jakiela, Rafal; Godlewski, Marek; Guziewicz, Elzbieta
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