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P. Kruszewski

Polish Academy of Sciences

13H-index
61Paper Count
612Citation Count
Published Papers 13
Publication Date
FeGa (0/-) acceptor level as a reference energy level in dilute AlxGa1-xN
err2024-06-03
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PREAI
errKruszewski, P.; Plesiewicz, J.; Grzanka, Sz.; Grzanka, E.; Prystawko, P.; Markevich, V. P.; Peaker, A. R.; Sun, L.; Dawe, C. A.; Halsall, M. P.
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Alloy splitting of the FeGa acceptor level in dilute AlxGa1-xN
err2023-11-29
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errOAAI
errKruszewski, P.; Markevich, V. P.; Peaker, A. R.; Plesiewicz, J.; Prystawko, P.; Halsall, M. P.; Sun, L.
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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
err2021-12-07
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errOAAI
errSchiliro, Emanuela; Giannazzo, Filippo; Di Franco, Salvatore; Greco, Giuseppe; Fiorenza, Patrick; Roccaforte, Fabrizio; Prystawko, Pawel; Kruszewski, Piotr; Leszczynski, Mike; Cora, Ildiko; Pecz, Bela; Fogarassy, Zsolt; Lo Nigro, Raffaella
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Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
err2019-07-01
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PREAI
errSchiliro, Emanuela; Giannazzo, Filippo; Bongiorno, Corrado; Di Franco, Salvatore; Greco, Giuseppe; Roccaforte, Fabrizio; Prystawko, Pawel; Kruszewski, Piotr; Leszczynski, Mike; Krysko, Marcin; Michon, Adrien; Cordier, Yvon; Cora, Ildiko; Pecz, Bela; Gargouri, Hassan; Lo Nigro, Raffaella
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Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate
err2019-06-01
err19
PREAI
errKruszewski, P.; Prystawko, P.; Grabowski, M.; Sochacki, T.; Sidor, A.; Bockowski, M.; Jasinski, J.; Lukasiak, L.; Kisiel, R.; Leszczynski, M.
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Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature
err2019-04-01
err10
PREAI
errGrigelionis, Ignas; Jorudas, Justinas; Jakstas, Vytautas; Janonis, Vytautas; Kasalynas, Irmantas; Prystawko, Pawel; Kruszewski, Piotr; Leszczynski, Michal
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Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications
err2018-03-27
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errOAAI
errCywinski, G.; Yahniuk, I.; Kruszewski, P.; Grabowski, M.; Nowakowski-Szkudlarek, K.; Prystawko, P.; Sai, P.; Knap, W.; Simin, G. S.; Rumyantsev, S. L.
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Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes
err2016-07-18
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PREAI
errCywinski, G.; Szkudlarek, K.; Kruszewski, P.; Yahniuk, I.; Yatsunenko, S.; Muziol, G.; Skierbiszewski, C.; Knap, W.; Rumyantsev, S. L.
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Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition
err2011-06-27
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PREAI
errKrajewski, Tomasz A.; Luka, Grzegorz; Gieraltowska, Sylwia; Zakrzewski, Adam J.; Smertenko, Petro S.; Kruszewski, Piotr; Wachnicki, Lukasz; Witkowski, Bartlomiej S.; Lusakowska, Elzbieta; Jakiela, Rafal; Godlewski, Marek; Guziewicz, Elzbieta
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Energy state distributions of the Pb centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy
err2008-06-17
err28
errOAAI
errDobaczewski, L.; Bernardini, S.; Kruszewski, P.; Hurley, P. K.; Markevich, V. P.; Hawkins, I. D.; Peaker, A. R.
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Alloy shift of no-germanium iron-related electronic levels in unstrained silicon-germanium alloys
err2007-12-21
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PREAI
errKruszewski, P.; Kolkovsky, Vl.; Mesli, A.; Dobaczewski, L.; Abrosimov, N. V.; Markevich, V. P.; Peaker, A. R.
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