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H
Hyunsang Hwang
pohang university of science and technology
62
H-index
511
Paper Count
1.7W
Citation Count
0
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Published Papers
114
Publication Date
Publication Date
Impact Factor
Citations
Ionic Field-Effect Transistor Achieving Large Memory Window and Enhanced Retention via Ultrathin Ozone-Oxidized Barrier Layer
IEEE Electron Device Letters
IF
4.5
2026-06-12
0
PRE
AI
Jongseon Seo; Geonhui Han; Laeyong Jung; Junghoon Park; Jongho Park; Suhwan Lim; Wanki Kim; Daewon Ha; Hyunsang Hwang
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Oxygen-Stoichiometry-Controlled Linearity and Uniformity of W/WO<sub>x</sub>/W Fixed-Resistance Arrays for Edge-AI Inference
IEEE Electron Device Letters
IF
4.5
2026-05-11
0
PRE
AI
Hoesung Ha; Dongmin Kim; Ohhyuk Kwon; Yoori Seo; Hyunsang Hwang
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DFT-Informed Multiscale Modeling of Switching Mechanisms and Design Strategies for Selector-Only Memory Devices
IEEE Transactions on Electron Devices
IF
3.2
2026-04-09
0
OA
AI
Dongmin Kim; Yoori Seo; Ohhyuk Kwon; Yubin Park; Taehoon Lee; Hyunsang Hwang
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High-Performance and Scalable Ferroelectric Diodes Enabled via 2D-MoS2 Buffer Layer Under Low Thermal Budget
Small
IF
12.1
2025-10-07
0
PRE
AI
Seungkwon Hwang; Kyumin Lee; Laeyong Jung; Hojung Jang; Byeongjin Park; Seock-Jin Jeong; Jongwon Yoon; Jung-Dae Kwon; Yonghun Kim; Hyunsang Hwang
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Hybrid FeFET-ECRAM Device for Enhanced Memory Window and Retention via Ion-Ferroelectric Synergy
IEEE Electron Device Letters
IF
4.5
2025-08-01
0
PRE
AI
Jongseon Seo; Geonhui Han; Laeyong Jung; Ohhyuk Kwon; Hyunsang Hwang
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Highly Reliable Hf1-XZrXO2 with Ultra-Low Operation Voltage (< 1 V) Enabled by Stoichiometric Control of Tungsten Oxide Interfacial Layer
Advanced Materials Technologies
IF
6.2
2025-07-08
0
OA
AI
Mostafa Habibi; Alireza Kashir; Tony Schenk; Hojung Jang; Seungyeol Oh; Jaeseon Kim; Geonhui Han; Donghwa Lee; Foroozan Koushan; Hyunsang Hwang
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Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation
ADVANCED ELECTRONIC MATERIALS
IF
5.3
2025-05-01
0
OA
AI
Kim, D; Lee, J; Seo, Y; Kwon, O; Masouleh, PA; Lee, J; Kwon, J; Kim, CH; Hwang, H
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Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory
ACS APPLIED MATERIALS & INTERFACES
IF
8.2
2025-03-24
0
PRE
AI
Han, GH; Seo, J; Park, J; Hong, MJ; Kim, J; Lee, KL; Kim, W; Ha, D; Hwang, H
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Physical Reservoir Computing for Real-Time Electrocardiogram Arrhythmia Detection Through Controlled Ion Dynamics in Electrochemical Random-Access Memory
ADVANCED ELECTRONIC MATERIALS
IF
5.3
2025-03-04
0
OA
AI
Lee, K; Kim, D; Seo, J; Hwang, H
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Exploring the Morphotropic Phase Boundary in HfO2-Based Ferroelectrics for Advanced High-k Dielectrics
ADVANCED MATERIALS TECHNOLOGIES
IF
6.2
2024-12-23
0
PRE
AI
Oh, Seungyeol; Jang, Hojung; Habibi, Mostafa; Sung, Minchul; Choi, Hyejung; Kim, Seyeon; Hwang, Hyunsang
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Controllable multilevel quantized conduction states in vertical CBRAM using Cu-nanodot ion source
APPLIED PHYSICS LETTERS
IF
3.6
2024-10-31
0
OA
AI
Lee, Sunhyeong; Lee, Chuljun; Kwon, Ohhyuk; Heo, Seongjae; Hwang, Hyunsang
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Volatile threshold switching devices for hardware security primitives: Exploiting intrinsic variability as an entropy source
APPLIED PHYSICS REVIEWS
IF
11.6
2024-05-23
0
OA
AI
Choi, Wooseok; Kwon, Ohhyuk; Lee, Jangseop; Oh, Seungyeol; Heo, Seongjae; Ban, Sanghyun; Seo, Yoori; Kim, Dongmin; Hwang, Hyunsang
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Improving the selector characteristics of ovonic threshold switch via UV treatment process (vol 123, 242103, 2023)
APPLIED PHYSICS LETTERS
IF
3.6
2024-01-04
0
OA
AI
Seo, Yoori; Lee, Jangseop; Ban, Sanghyun; Kim, Dongmin; Han, Geonhui; Hwang, Hyunsang
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Improving the selector characteristics of ovonic threshold switch via UV treatment process
APPLIED PHYSICS LETTERS
IF
3.6
2023-12-13
3
PRE
AI
Seo, Yoori; Lee, Jangseop; Ban, Sanghyun; Kim, Dongmin; Han, Geonhui; Hwang, Hyunsang
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Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures
NANOMATERIALS
IF
4.3
2023-10-30
1
OA
AI
Lee, Ju-Ah; Yoon, Jongwon; Hwang, Seungkwon; Hwang, Hyunsang; Kwon, Jung-Dae; Lee, Seung-Ki; Kim, Yonghun
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Improved Switching Uniformity of SCLC-RRAM Using the Vertically Formed Nanoscale 2DEG Electrode and Control of Oxygen Vacancy Distribution
ACS APPLIED ELECTRONIC MATERIALS
IF
4.7
2023-10-26
2
PRE
AI
Kim, Jiho; Kwon, Ohhyuk; Lee, Kyumin; Hwang, Hyunsang
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Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device Engineering
SMALL
IF
12.1
2023-06-09
7
OA
AI
Nikam, Revannath Dnyandeo; Lee, Jongwon; Lee, Kyumin; Hwang, Hyunsang
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NbO2 selector device with Ge2Sb2Te5 thermal barrier for low off current (300 nA) and low power operation
APPLIED PHYSICS LETTERS
IF
3.6
2023-03-13
2
PRE
AI
Kwon, Ohhyuk; Lee, Jangseop; Lee, Kyumin; Choi, Wooseok; Hwang, Hyunsang
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Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors
APPLIED PHYSICS LETTERS
IF
3.6
2022-08-17
7
PRE
AI
Lee, Kyumin; Jung, Laeyong; Hwang, Hyunsang
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On-Chip Integrated Atomically Thin 2D Material Heater as a Training Accelerator for an Electrochemical Random-Access Memory Synapse for Neuromorphic Computing Application
ACS NANO
IF
16
2022-07-19
6
PRE
AI
Nikam, Revannath Dnyandeo; Lee, Jongwon; Choi, Wooseok; Kim, Dongmin; Hwang, Hyunsang
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Research Directions
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Co-authors
Cooperation Journals
R
R. Stanley Williams
H-index: 117 · Papers: 1.2K
S
Sang‐Woo Kim
H-index: 115 · Papers: 1.2K
Y
Young Tae Kim
H-index: 107 · Papers: 1.3K
Hyoung Seop Kim
(Hyoung Seop Kim)
H-index: 99 · Papers: 1.8K
T
Tae‐Woo Lee
H-index: 89 · Papers: 650
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