Namlab Ggmbh

学者数37

论文数14

被引数1

关联论文 (13)

发表时间

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor 铁电极化调控高电子迁移率晶体管阈值电压

Advanced Functional Materials

IF19

2026-09-07

OAAI

Wentian Gao; Andre Wachowiak; Thomas Mikolajick; Uwe Schroeder; Roberto Guido

How we discovered ferroelectricity in hafnium oxide thin films 如何发现氧化铪薄膜中的铁电性

Nature Electronics

IF40.9

2026-09-04

PREAI

Tim S. Böscke; Ulrich Böttger; Uwe Schroeder

Readout Current in HZO-Based Bilayer FTJs: Physical Mechanisms and Design Insight HZO基双层FTJ中的读出电流：物理机制与设计见解

IEEE Transactions on Electron Devices

IF3.2

2026-03-16

OAAI

M. Segatto; F. M. Puglisi; F. Driussi; D. Lizzit; L. Carpentieri; S. Slesazeck; T. Mikolajick; D. Esseni

Design and Evaluation of an RFET Standard Cell Library Compatible With 22-nm FDSOI 22-nm FDSOI兼容的RFET标准单元库的设计与评估

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IF2.9

2025-12-31

PREAI

Nima Kavand; Armin Darjani; Niladri Bhattacharjee; Jorge Navarro Quijada; Juan P. Martinez; Thomas Mikolajick; Jens Trommer; Akash Kumar

Controlling the Wake-Up Mechanism and Switching Kinetics of Ferroelectric HfxZr1 – xO2 through Hf Content Modulation 通过Hf含量调制控制铁电HfxZr1–xO2的唤醒机制和开关动力学

ACS Applied Materials & Interfaces

IF8.2

2025-10-29

OAAI

Athira Sunil; Ruben Alcala; Cláudia Silva; Thomas Mikolajick; Suzanne Lancaster

Does a Morphotropic Phase Boundary Exist in ZrxHf1-xO2-Based Thin Films?ZrxHf1-xO2基薄膜中是否存在形变畴相界？

Advanced Functional Materials

IF19

2025-10-26

OAAI

Pramoda Vishnumurthy; Richard Ganser; Dong-Gyu Kim; Intak Jeon; Chang Hwa Jung; Hanjin Lim; Thomas Mikolajick; Susan Trolier-McKinstry; Alfred Kersch; Uwe Schroeder

Emerging applications: Neuromorphic computing and reservoir computing 新兴应用：神经形态计算和储池计算

MRS Bulletin

IF4.9

2025-09-23

PREAI

Kasidit Toprasertpong; Thomas Mikolajick; Suman Datta; Qianqian Huang; Shinichi Takagi

Process Integration of U-Shape Ambipolar Schottky–Barrier Field-Effect Transistors U形双极肖特基势垒场效应晶体管的工艺集成

Advanced Electronic Materials

IF5.3

2025-09-23

OAAI

Cigdem Cakirlar; Bruno Neckel Wesling; Konstantinos Moustakas; Giulio Galderisi; Sylvain Pelloquin; Oskar Baumgartner; Mischa Thesberg; Thomas Mikolajick; Guilhem Larrieu; Jens Trommer

Offset Field Extraction With Multi-Bit Magnetic Tunnel Junction Structures 基于多比特磁隧道结结构的偏移场提取

IEEE Transactions on Electron Devices

IF3.2

2025-07-01

OAAI

Meike Hindenberg; Abhishek Talapatra; Benjamin Lilienthal-Uhlig; Johannes Müller; Raik Hoffmann; Thomas Mikolajick

ZrO2 Based Multilayered Stacks with Al2O3, Y2O3 or La2O3 Interlayers for SiC Power Devices 基于ZrO2的多层堆叠结构，采用Al2O3、Y2O3或La2O3中间层，用于SiC功率器件

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2025-05-02

OAAI

Krause, S; Mikhaylov, A; Schroeder, U; Mikolajick, T; Wachowiak, A

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin-Huxley Neuristor 混沌边缘理论揭示了迄今为止首次报道的最简单的Hodgkin-Huxley神经触发器。

ADVANCED ELECTRONIC MATERIALS

IF5.3

2025-03-06

OAAI

Ascoli, A; Demirkol, AS; Messaris, I; Ntinas, V; Prousalis, D; Slesazeck, S; Mikolajick, T; Corinto, F; Bonnin, M; Gilli, M; Civalleri, PP; Tetzlaff, R; Chua, L

Ferroelectric Al1-xScxN Opposite State Retention Model Based on Switching Dynamics 基于开关动力学的铁电Al₁₋ₓScₓN反态保持模型

ADVANCED FUNCTIONAL MATERIALS

IF19

2025-03-06

PREAI

Guido, R; Gremmel, M; Mikolajick, T; Fichtner, S; Schroeder, U

Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects 铁电氧化铪中由界面电荷效应介导的峰分裂与偏置场

ACS Applied Materials & Interfaces

IF8.2

PREAI

Moritz Engl; Wassim Hamouda; Ines Häusler; Suzanne Lancaster; Luca Carpentieri; Thomas Mikolajick; Catherine Dubourdieu; Stefan Slesazeck