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收藏Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication
Xu, Xiaorui; Chen, Desen; Lu, Yaoping; Li, Titao; Han, Xueli; Chen, Duanyang; Qi, Hongji; Yang, Dan; Zhu, Minmin; Zhang, Haizhong; Lu, Xiaoqiang
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收藏Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination
Xu, Xiaorui; Deng, Yicong; Li, Titao; Chen, Duanyang; Wang, Fangzhou; Yu, Cheng; Qi, Hongji; Wang, Yang; Zhang, Haizhong; Lu, Xiaoqiang
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收藏Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors
Wang, Fangzhou; Chen, Wanjun; Li, Xuan; Sun, Ruize; Xu, Xiaorui; Xin, Yajie; Wang, Zeheng; Shi, Yijun; Xia, Yun; Liu, Chao; Zhou, Jianjun; Zhou, Qi; Zhang, Bo
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