Mengwei Si - Publications, H-index & Citations

Mengwei Si

shanghai jiao tong university

41H指数

232论文数

7.2K被引数

收录论文 58

发表时间

Boosting ALD In₂O₃ Transistor Performance Using Hybrid H₂O and O₃ Co-Reactant 采用水氧混合共反应物提升ALD氧化铟薄膜晶体管性能

IEEE Transactions on Electron Devices

IF3.2

2026-07-03

PREAI

Ziheng Wang; Kai Jiang; Chen Wang; Hequn Zhou; Liankai Zheng; Zhiyu Lin; Mengwei Si

The Ballistic Injection in IGZO GAA VFET With Scaled Source/Drain Extension and Its Impact on On-Current Enhancement IGZO GAA VFET中带缩放源/漏延伸的弹道注入及其对开态电流增强的影响

IEEE Electron Device Letters

IF4.5

2026-06-24

PREAI

Liankai Zheng; Ziheng Wang; Zhiyu Lin; Mengwei Si

Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gate-Hall Mobility Exceeding 100 cm²/V $\cdot $ s at Room Temperature 介质沉积增强原子层沉积氧化铟晶体管室温下实现超过100 cm²/V·s的高栅霍尔迁移率

IEEE Electron Device Letters

IF4.5

2026-06-09

PREAI

Chen Wang; Kai Jiang; Jinxiu Zhao; Ziheng Wang; Guilei Wang; Chao Zhao; Mengwei Si

Electrically Tunable WSe2/α-In2Se3 van der Waals Ferroelectric Heterostructure for Reconfigurable Photodetection and Neuromorphic Computing 电学调控的WSe2/α-In2Se3范德华铁电异质结构用于可重构光电探测和神经形态计算

ACS Applied Materials & Interfaces

IF0

2026-02-23

PREAI

Han Chen; Yufeng Ning; Yukang Chen; Jinjian Yan; Jiaxin Chen; Liang Liu; Yinfeng Long; Shiyu Zhang; Kai Liu; Mingfeng Chen; Jinxiu Zhao; Mengwei Si; Xinwei Zhang; Yishu Zhang; Du Xiang; Lin Wang

Ferroelectric Field Effect Transistor With Annealing-Free Ultralow Process Temperature (250 °C) of Hf_xZr_1-xO₂ for BEOL Application 铁电场效应晶体管，具有无需退火的超低工艺温度（250 °C）的Hf_xZr_1-xO₂，用于BEOL应用

IEEE Transactions on Electron Devices

IF3.2

2026-01-27

PREAI

Yulong Dong; Danyang Chen; Tianning Cui; Jingquan Liu; Mengwei Si; Xiuyan Li

Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices 异质集成超宽禁带半导体用于射频功率器件

Science Advances

IF12.5

2025-11-19

PREAI

Hong Zhou; Min Zhou; Mingjie Xiang; Hehe Gong; Guangjie Gao; Chenlu Wang; Yachao Zhang; Kui Dang; Zhihong Liu; Jinfeng Zhang; HangMing Zhang; Yifan Wang; Han Wang; Mengwei Si; Yuhao Zhang; Yue Hao; Jincheng Zhang

High-Stability Ultrathin Oxide Transistors via Defect Engineering for High-Performance Capacitorless DRAM 通过缺陷工程实现高稳定性超薄氧化物晶体管，用于高性能无电容DRAM

ADVANCED FUNCTIONAL MATERIALS

IF19

2025-11-01

OAAI

Li, Jiakang; Zheng, Liankai; Hong, Peiyan; Ye, Chenchen; Liu, Huibo; Si, Mengwei; Miao, Xiangshui; Li, Xuefei

Enhanced electrical performances with HZO/β-Ga2O3 3D FinFET toward highly perceptual synaptic device application 基于HZO/β-Ga2O3 3D FinFET的高感知度突触器件应用的增强型电学性能

Materials Science in Semiconductor Processing

IF4.6

2025-10-01

PREAI

Seohyeon Park; Jaewook Yoo; Seokjin Oh; Hongseung Lee; Minah Park; Seongbin Lim; Soyeon Kim; Sojin Jung; Bongjoong Kim; Keun Heo; Taehwan Moon; TaeWan Kim; Mengwei Si; Peide D. Ye; Hagyoul Bae

On the Accurate Evaluation of Intrinsic Electron Mobility on Oxide Semiconductor Transistors 氧化物半导体晶体管中本征电子迁移率的准确评估

IEEE Electron Device Letters

IF4.5

2025-09-02

PREAI

Chen Wang; Longzhong Liao; Kai Jiang; Ziheng Wang; Jinxiu Zhao; Guo Zhou; Mengwei Si

High-density, nonvolatile SRAM using monolithic 3D integration of InGaZnO thin-film transistors and Hf0.5Zr0.5O2-based ferroelectric capacitors 采用单片3D集成InGaZnO薄膜晶体管和Hf0.5Zr0.5O2基铁电电容的高密度非易失性SRAM

DEVICE

IF8

2025-09-01

OAAI

Liu, Qihan; Li, Yu; Liu, Liwei; Jiang, Hao; Zhu, Haozhe; Chen, Zexing; Yang, Yang; Si, Mengwei; Li, Can; Lin, Peng; Wei, Yingfen; Liu, Qi

Top-Gate Atomic-Layer-Deposited Oxide Semiconductor Transistors With Large Memory Window and Non-Ferroelectric HfO₂ Gate Stack 顶栅原子层沉积氧化物半导体晶体管，具有大存储窗口和非铁电HfO₂栅极堆叠

IEEE Electron Device Letters

IF4.5

2025-08-01

PREAI

Kai Jiang; Ziheng Wang; Zhiyu Lin; Zhenyu Chen; Jinxiu Zhao; Liankai Zheng; Chen Wang; Siying Li; Shan-Ting Zhang; Dongdong Li; Xiuyan Li; Xiaojun Guo; Mengwei Si

Model tests of a stiffness-similar jack-up, Part 1: Model design, fabrication and structural pre-tests 刚度相似型自升式平台模型试验，第1部分：模型设计、制造及结构预试验

Marine Structures

IF5.1

2025-05-31

PREAI

M. Cai; S. Zhang; C. Zhang; W.K. Chen; M. Yu; C.K. Yeo; H.J. Soo; J. Cao; Y.Z. Law; B.V.E. How; H. Santo; A.R. Magee; M. Si

Are There High-Density Deep States in an Atomic-Layer-Deposited Indium-Gallium-Zinc Oxide Thin Film?原子层沉积的铟镓锌氧化物薄膜中是否存在高密度深能级态？

NANO LETTERS

IF9.1

2025-03-31

PREAI

Zheng, Liankai; Xing, Lijuan; Lin, Zhiyu; Zhao, Wanpeng; Fan, Yuyan; Dong, Yulong; Wang, Ziheng; Li, Siying; Li, Xiuyan; Wu, Ying; Xu, Jeffrey; Si, Mengwei

Van der Waals Ferroelectric CuCrP2S6-Enabled Hysteresis-Free Negative Capacitance Field-Effect Transistors 范德瓦尔斯铁电材料CuCrP2S6实现的零滞后负电容场效应晶体管

ADVANCED MATERIALS

IF26.8

2025-03-23

PREAI

Chen, H; Long, YF; Zhang, SY; Liu, K; Chen, MF; Zhao, JX; Si, MW; Wang, L

A metastable temperature-strain phase diagram of HfxZr1-xO2 thin films based on synchrotron-based in situ 2D GIXRD investigation

APPLIED PHYSICS LETTERS

IF3.6

2024-12-16

PREAI

Cui, Tianning; Xue, Zhipeng; Chen, Danyang; Fan, Yuyan; Liu, Jingquan; Si, Mengwei; Li, Xiuyan

Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics 铌酸镁作为二维电子学的高 κ 栅极电介质

NATURE ELECTRONICS

IF40.9

2024-09-18

PREAI

Zhu, Cheng-Yi; Zhang, Meng-Ru; Chen, Qing; Yue, Lin-Qing; Song, Rong; Wang, Cong; Li, Hui-Zhen; Zhou, Feichi; Li, Yang; Zhao, Weiwei; Zhen, Liang; Si, Mengwei; Li, Jia; Wang, Jingli; Chai, Yang; Xu, Cheng-Yan; Qin, Jing-Kai

Strain and defect engineering of high-performance monolayer two-dimensional material/Ag nanoparticles optoelectronic FET sensor through multiple laser shock

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2024-08-01

PREAI

Huang, Zheng; Xu, Shuoheng; Zhang, Zequn; Wang, Zifeng; Si, Mengwei; Hu, Yaowu

Model tests of a stiffness-similar jack-up, Part 3: Transit condition and uncertainty analysis

MARINE STRUCTURES

IF5.1

2024-07-01

PREAI

Zhang, C.; Zhang, S.; Yeo, C. K.; Soo, H. J.; Law, Y. Z.; Yu, M.; Chen, W. K.; Cai, M.; How, B. V. E.; Santo, H.; Magee, A. R.; Si, M.