logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
P

Peide D. Ye

Purdue University

59H指数
439论文数
2.5W被引数
收录论文 122
发表时间
logo
Monolithic 3D integration of atomic-layer-deposited oxide semiconductors on 200-mm silicon wafers在200毫米硅片上集成原子层沉积氧化物半导体的单片三维集成
errNature Nanotechnology
IF34.9
err2026-09-15
err0
PREAI
errChang Niu; Linjia Long; Luqi Zheng; Shuting Du; Jian-Yu Lin; Kisoo Nam; Zehao Lin; Chang Liu; Juanjuan Lu; Haiyan Wang; Haitong Li; Peide D. Ye
err分享
err收藏
Circular ratchet currents in two dimensional tellurene with an asymmetric grating二维碲烯中具有不对称光栅的循环棘轮电流
errCommunications Physics
IF5.8
err2026-08-06
err0
errOAAI
errM. D. Moldavskaya; L. E. Golub; Chang Niu; Peide D. Ye; S. D. Ganichev
err分享
err收藏
Gate-tunable giant negative magnetoresistance in tellurene driven by quantum geometry碲烯中受量子几何驱动的门控可调巨大负磁阻
errNature Communications
IF15.7
err2026-06-05
err0
errOAAI
errMarcello B. Silva Neto; Chang Niu; Marcus V. O. Moutinho; Pierpaolo Fontana; Claudio Iacovelli; Victor Velasco; Caio Lewenkopf; Peide D. Ye
err分享
err收藏
A Unified Mechanism for Strain- and Anneal-Induced Oxygen-Vacancy Behavior in Oxide Semiconductors氧化物半导体中应变和退火诱导的氧空位行为的统一机制
errChemistry of Materials
IF7
err2026-06-04
err0
errOAAI
errHyeongjun Jang; Yoonju Park; Beomjin Park; Taehyun Kim; Jungho Lee; Jian-Yu Lin; Chang Niu; Peide D. Ye; Ho-Hyun Nahm; Changwook Jeong
err分享
err收藏
In Situ Study of the Ferroelectric–Antiferroelectric Phase Transition in Hf1–xZrxO2 at Elevated Temperatures up to 600 °C在高温（最高600 °C）下原位研究Hf1–xZrxO2的 ferroelectric–antiferroelectric 相变
errNano Letters
IF9.1
err2026-05-06
err0
PREAI
errKisoo Nam; Zehao Lin; Tae Ryong Kim; Chang Niu; Sumi Lee; Shengyao Huang; Juanjuan Lu; Chang Liu; Sumeet K. Gupta; Haiyan Wang; Peide D. Ye
err分享
err收藏
Thickness Scaling and Roughness-Induced Mobility Cliff in Ultra-Thin-Body MOSFETs超薄体MOSFET中的厚度缩放和粗糙度诱导的迁移率悬崖
errIEEE Electron Device Letters
IF4.5
err2026-04-28
err0
PREAI
errMir Md Fahimul Islam; In Huh; Jian-Yu Lin; Seokyeon Shin; Youngjoon Lee; Changwook Jeong; Peide D. Ye; Muhammad Ashraful Alam
err分享
err收藏
Monolayer MoS2 Sensors for Probing the Self-Heating Effect in Indium Tin Oxide Nanoelectronics单层MoS2传感器用于探测氧化铟锡纳米电子学中的自加热效应
errNano Letters
IF9.1
err2026-04-08
err0
PREAI
errNeil Ghosh; Zehao Lin; Monoranjan Debnath Rony; Sahej Sharma; Jian-Yu Lin; Zheng Sun; Zhihong Chen; Joerg Appenzeller; Thomas E. Beechem; Peide D. Ye; Xianfan Xu
err分享
err收藏
Breakdown of Ohm’s Law by Disorders in Low-Dimensional Transistors低维晶体管中无序导致的欧姆定律失效分析
errNano Letters
IF9.1
err2026-04-02
err0
PREAI
errChang Niu; Adam Charnas; Jian-Yu Lin; Linjia Long; Zehao Lin; Zhuocheng Zhang; Peide D. Ye
err分享
err收藏
Experimental Investigation of Variations in Polycrystalline Hf0.5Zr0.5O2 (HZO)-Based MFIMHf0.5Zr0.5O2 (HZO)基MFIM多晶材料的实验研究
errIEEE Transactions on Electron Devices
IF3.2
err2026-03-10
err0
PREAI
errTae Ryong Kim; Revanth Koduru; Zehao Lin; Peide D. Ye; Sumeet Kumar Gupta
err分享
err收藏
Non-reciprocal magnetoresistances in chiral tellurium手性碲中的非互易磁阻
errJournal of Applied Physics
IF2.5
err2026-02-14
err0
PREAI
errLi, Shuchen; Niu, Chang; Ye, Peide D.; Hoffmann, Axel
err分享
err收藏
Characterization of Thermal Stability and Unexpected Mobility Enhancement in IGZO FETs Measured Up to 750 °CIGZO FETs在高达750 °C下的热稳定性表征及意外的迁移率提升
errIEEE Electron Device Letters
IF4.5
err2026-01-21
err0
PREAI
errKisoo Nam; Chang Niu; Hyeongjun Jang; Beomjin Park; Yoonju Park; Youngjoon Lee; Muhammad A. Alam; Changwook Jeong; Peide D. Ye
err分享
err收藏
Contact Length Scaling in In2O3 and InGaZnO FETs: Critical Roles of Quantum Confinement and Indium Concentration Tuning
errIEEE Transactions on Electron Devices
IF3.2
err2026-01-12
err0
PREAI
errJian-Yu Lin; Chang Niu; Zehao Lin; Sumi Lee; Chang Liu; Juanjuan Lu; Haiyan Wang; Peide D. Ye
err分享
err收藏
Engineering Amorphous IGZO Thin-Film Transistors: The Role of Composition and Channel Thickness in Mobility-Threshold Voltage Optimization工程非晶IGZO薄膜晶体管：组分和沟道厚度在迁移率-阈值电压优化中的作用
errACS OMEGA
IF4.3
err2025-12-01
err0
PREAI
errKim, Taehyun; Jang, Hyeongjun; Park, Beomjin; Shin, Seokyeon; Alam, Muhammad A.; Ye, Peide D.; Jeong, Changwook
err分享
err收藏
Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators量子反常霍尔绝缘子的普遍电导涨落
errADVANCED MATERIALS
IF26.8
err2025-12-01
err0
errOAAI
errDeng, Peng; Zhang, Peng; Qiu, Gang; Yang, Ting-Hsun; Niu, Chang; Li, Yaochen; Cui, Wenqiang; Feng, Yang; Ye, Peide D.; He, Ke; Chang, Kai; Wang, Kang L.
err分享
err收藏
Distinguishing the Different Vth Shift Mechanisms in In2O3 TFTs Using Ultrafast On-the-Fly Reliability Measurements
errIEEE ELECTRON DEVICE LETTERS
IF4.5
err2025-11-01
err0
PREAI
errYeh, Chien-Hung; Niu, Chang; Lin, Jian-Yu; Lin, Zehao; Liu, Chang; Lu, Juanjuan; Lee, Sumi; Wang, Haiyan; Chang, Ting-Chang; Ye, Peide D.
err分享
err收藏
Enhanced electrical performances with HZO/β-Ga2O3 3D FinFET toward highly perceptual synaptic device application基于HZO/β-Ga2O3 3D FinFET的高感知度突触器件应用的增强型电学性能
errMaterials Science in Semiconductor Processing
IF4.6
err2025-10-01
err0
PREAI
errSeohyeon Park; Jaewook Yoo; Seokjin Oh; Hongseung Lee; Minah Park; Seongbin Lim; Soyeon Kim; Sojin Jung; Bongjoong Kim; Keun Heo; Taehwan Moon; TaeWan Kim; Mengwei Si; Peide D. Ye; Hagyoul Bae
err分享
err收藏
Effects of Gallium on Electron Transport and Bias Stability in Ultrascaled Amorphous InGaO Transistors镓对超缩放非晶InGaO晶体管中电子传输和偏压稳定性的影响
errIEEE Transactions on Electron Devices
IF3.2
err2025-08-01
err0
PREAI
errJie Zhang; Changjie Zhou; Hongyi Dou; Zhuocheng Zhang; Zehao Lin; Ke Xu; Xinghang Zhang; Haiyan Wang; Huili Zhu; Weifeng Yang; Peide D. Ye
err分享
err收藏
Exploration of Interplay Between Charge Trapping Dynamics and Polarization Switching in α -In₂Se₃ Ferroelectric Semiconductor FETsα-In₂Se₃铁电半导体FET中电荷俘获动力学与极化翻转相互作用的探索
errIEEE Electron Device Letters
IF4.5
err2025-07-01
err0
PREAI
errMinah Park; Jaewook Yoo; Seohyeon Park; Hongseung Lee; Hyeonjun Song; Soyeon Kim; Seongbin Lim; Sojin Jung; Gang Qiu; Sungjune Park; TaeWan Kim; Peide D. Ye; Hagyoul Bae
err分享
err收藏
InGaZnO4 and In2O3 Mobility Trend: The Role of Structural Disorder from Amorphous to Crystalline StatesInGaZnO4和In2O3迁移率趋势：从非晶态到晶态结构无序的作用
errACS MATERIALS LETTERS
IF8.7
err2025-04-27
err0
PREAI
errJang, H; Kim, T; Lee, W; Cho, M; Ha, D; Alam, MA; Ye, PD; Jeong, C
err分享
err收藏
Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium通过自形成栅介质和金属接触实现p型和n型场效应晶体管在二维碲材料上的超低电压运行
errADVANCED MATERIALS
IF26.8
err2025-04-08
err0
errOAAI
errNiu, C; Long, LJ; Zhang, YZ; Lin, ZH; Tan, PK; Lin, JY; Wu, WZ; Wang, HY; Ye, PD
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
P
Pulickel M. Ajayan
H 指数: 201 · 论文数: 1.5K
T
Takashi Taniguchi
H 指数: 198 · 论文数: 5.5K
W
William A. Goddard
H 指数: 184 · 论文数: 2.4K
T
Tobin J. Marks
H 指数: 171 · 论文数: 2.0K
X
Xiangfeng Duan
H 指数: 157 · 论文数: 599
查看更多