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H

Hanggyo Jung

Department of Semiconductor Convergence Engineering

7H指数
19论文数
256被引数
收录论文 13
发表时间
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Novel vertical contact architecture for significantly reduced contact resistance in 2D nanosheet FETs新型垂直接触架构，用于显著降低二维纳米片FET的接触电阻
errnpj 2D Materials and Applications
IF8.8
err2025-11-26
err0
errOAAI
errHanggyo Jung; Junyeol Lee; Jongwook Jeon
err分享
err收藏
High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems高介电常数介质与二维半导体的范德华集成，用于三维互补逻辑系统
errNature Communications
IF15.7
err2025-11-26
err0
errOAAI
errTaeho Kang; Joonho Park; Seung Yong Lee; Hanggyo Jung; Jongwook Jeon; Yong-Hoon Kim; Sungjoo Lee
err分享
err收藏
Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes探索亚1nm节点下最优TMD多通道GAA-FET架构
errscience advanced materials and devices
IF0
err2025-06-20
err0
errOAAI
errJunyeol Lee; Hanggyo Jung; Donghyun Jin; Jongwook Jeon
err分享
err收藏
Impact of Interconnect on Ferroelectric FinFET-Based Logic-in-Memory Circuits at 3-nm Technology Node互连对基于铁电FinFET的存内逻辑电路在3 nm工艺节点的影响
errIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IF2.9
err2025-05-20
err0
PREAI
errJuhwan Park; Huijun Kim; Hanggyo Jung; Changho Ra; Jongwook Jeon
err分享
err收藏
Spiking Neural Network Integrated with Impact Ionization Field-Effect Transistor Neuron and a Ferroelectric Field-Effect Transistor Synapse与碰撞电离场效应晶体管神经元和铁电场效应晶体管突触集成的尖峰神经网络
errADVANCED MATERIALS
IF26.8
err2024-09-05
err0
PREAI
errChoi, Haeju; Baek, Sungpyo; Jung, Hanggyo; Kang, Taeho; Lee, Sangmin; Jeon, Jongwook; Jang, Byung Chul; Lee, Sungjoo
err分享
err收藏
Integrated 1D epitaxial mirror twin boundaries for ultrascaled 2D MoS2 field-effect transistors用于超大规模2D MoS2场效应晶体管的集成1D外延镜双晶界
errNATURE NANOTECHNOLOGY
IF34.9
err2024-07-03
err4
PREAI
errAhn, Heonsu; Moon, Gunho; Jung, Hang-gyo; Deng, Bingchen; Yang, Dong-Hwan; Yang, Sera; Han, Cheolhee; Cho, Hyunje; Yeo, Youngki; Kim, Cheol-Joo; Yang, Chan-Ho; Kim, Jonghwan; Choi, Si-Young; Park, Hongkun; Jeon, Jongwook; Park, Jin-Hong; Jo, Moon-Ho
err分享
err收藏
High-κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-Switching Computing Devices用于低功耗陡开关计算设备的高 κ 电介质 (HfO2)/2D半导体 (HfSe2) 栅极堆叠
errADVANCED MATERIALS
IF26.8
err2024-04-08
err3
errOAAI
errKang, Taeho; Park, Joonho; Jung, Hanggyo; Choi, Haeju; Lee, Sang-Min; Lee, Nayeong; Lee, Ryong-Gyu; Kim, Gahye; Kim, Seung-Hwan; Kim, Hyung-jun; Yang, Cheol-Woong; Jeon, Jongwook; Kim, Yong-Hoon; Lee, Sungjoo
err分享
err收藏
Logic-in-memory application of ferroelectric-based WS2-channel field-effect transistors for improved area and energy efficiency
errNPJ 2D MATERIALS AND APPLICATIONS
IF8.8
err2024-04-01
err1
errOAAI
errKim, Huijun; Park, Juhwan; Jung, Hanggyo; Ra, Changho; Jeon, Jongwook
err分享
err收藏
Oxide and 2D TMD semiconductors for 3D DRAM cell transistors
errNANOSCALE HORIZONS
IF6.6
err2024-01-01
err3
PREAI
errHur, Jae Seok; Lee, Sungsoo; Moon, Jiwon; Jung, Hang-Gyo; Jeon, Jongwook; Yoon, Seong Hun; Park, Jin-Hong; Jeong, Jae Kyeong
err分享
err收藏
Well-Balanced Ambipolar Charge Transport of Diketopyrrolepyrrole-Based Copolymers: Organic Field-Effect Transistors and High-Voltage Logic Applications
errMACROMOLECULAR RAPID COMMUNICATIONS
IF4.3
err2023-08-02
err3
PREAI
errXuyao, Song; Kim, Sang Beom; Jung, Hanggyo; Kim, Jaekyum; Mo, Jaewan; Jeong, Yong Jin; Jang, Jaeyoung; An, Tae Kyu; Kim, Yun-Hi; Jeon, Jongwook
err分享
err收藏
Modulation of Contact Resistance of Dual-Gated MoS2 FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal Contacts
errADVANCED SCIENCE
IF14.1
err2023-05-05
err8
errOAAI
errNgo, Tien Dat; Huynh, Tuyen; Jung, Hanggyo; Ali, Fida; Jeon, Jongwook; Choi, Min Sup; Yoo, Won Jong
err分享
err收藏
Investigation of Optimal Architecture of MoS2 Channel Field-Effect Transistors on a Sub-2 nm Process Node
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-04-03
err8
PREAI
errPark, Jihun; Jung, Hanggyo; Kwon, Wookyung; Choi, Gunhee; Chang, Jeesoo; Jeon, Jongwook
err分享
err收藏
Hyper-FET's Phase-Transition-Materials Design Guidelines for Ultra-Low Power Applications at 3 nm Technology NodeHyper-fet的相变材料设计指南，用于3 nm技术节点的超低功耗应用
errNANOMATERIALS
IF4.3
err2022-11-21
err4
errOAAI
errJung, Hanggyo; Chang, Jeesoo; Yoo, Changhyun; Oh, Jooyoung; Choi, Sumin; Song, Juyeong; Jeon, Jongwook
err分享
err收藏

研究方向

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