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Theresia Knobloch

Technische Universität Wien

22H指数
98论文数
3.8K被引数
收录论文 35
发表时间
Quantum tunnelling and leakage current across two-dimensional materials二维材料中的量子隧穿和漏电流
err2026-07-01
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PREAI
errYue Yuan; Francesco Maria Puglisi; Andrea Padovani; Christoph Reuter; Tingting Han; Daria Belotcerkovtceva; Iakov Reznikov; Alexey Berdyugin; Yaqing Shen; Mahdi Pourfath; Theresia Knobloch; Marco A. Villena; Lukas Völkel; Max C. Lemme; Tibor Grasser; Deji Akinwande; Mario Lanza
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Ferroelectric Polarization Effect on Charge Trapping in HfO2 FeFETs Examined via Random Telegraph Noise通过随机电报噪声检验HfO2 FeFETs中电荷俘获的铁电极化效应
err2026-05-01
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PREAI
errZilberman, Gilad; Dahan, Mor M.; Ber, Emanuel; Kurzweil, Joel; Knobloch, Theresia; Mulaosmanovic, Halid; Dunkel, Stefan; Muller, Johannes; Beyer, Sven; Grasser, Tibor; Yalon, Eilam
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Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability近零迟滞范德华MnAl₂S₄场效应晶体管,具有低最小阈值电压衰减和高热稳定性
err2026-01-09
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errOAAI
errSeyed Mehdi Sattari-Esfahlan; Yury Illarionov; Fang Xu; Alexandros Provias; Saeed Mirzaei; Jan Michalička; Theresia Knobloch; Ondřej Man; Yangbo Zhou; Tibor Grasser
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A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projection一种标准化的方法来表征基于2d材料的晶体管中的磁滞,以进行稳定性基准测试和性能预测
err2025-11-21
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errOAAI
errAlexander Karl; Axel Verdianu; Dominic Waldhoer; Theresia Knobloch; Joël Kurzweil; Mina Bahrami; Mohammad Rasool Davoudi; Pedram Khakbaz; Bernhard Stampfer; Seyed Mehdi Sattari-Esfahlan; Yury Illarionov; Aftab Nazir; Changze Liu; Yu Zheng; Lorenzo Pettorosso; Dmitry Polyushkin; Thomas Müller; Saptarshi Das; Xiao Renshaw Wang; Junchuan Tang; Yichi Zhang; Congwei Tan; Ye Li; Hailin Peng; Michael Waltl; Tibor Grasser
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Compact I–V Model for Double-Gated MoS2 FETs Including Short-Channel Effects考虑短沟道效应的双栅MoS2 FETs紧凑型I–V模型
err2025-11-14
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PREAI
errAhmed Mounir; François Lime; Alexander Kloes; Alexandros Provias; Theresia Knobloch; K. P. O'Brien; Tibor Grasser; Benjamin Iñiguez
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Two-dimensional Bi2SeO2 and Its Native Insulators for Next-Generation Nanoelectronics二维Bi2SeO2及其本征绝缘体用于下一代纳电子学
err2025-03-05
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PREAI
errKhakbaz, P; Waldhoer, D; Bahrami, M; Knobloch, T; Pourfath, M; Davoudi, MR; Zhang, YC; Gao, XY; Peng, HL; Waltl, M; Grasser, T
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Enormous Out-of-Plane Charge Rectification and Conductance through Two-Dimensional Monolayers巨面外电荷整流和通过二维单层的电导
err2025-01-15
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PREAI
errCabanillas, A; Shahi, S; Liu, MM; Jaiswal, HN; Wei, SC; Fu, Y; Chakravarty, A; Ahmed, A; Liu, XC; Sun, J; Yang, C; Yoo, WJ; Knobloch, T; Perebeinos, V; Di Bartolomeo, A; Grasser, T; Yao, F; Li, HM
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A stochastic encoder using point defects in two-dimensional materials
err2024-12-04
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errOAAI
errRavichandran, Harikrishnan; Knobloch, Theresia; Subbulakshmi Radhakrishnan, Shiva; Wilhelmer, Christoph; Stepanoff, Sergei P.; Stampfer, Bernhard; Ghosh, Subir; Oberoi, Aaryan; Waldhoer, Dominic; Chen, Chen; Redwing, Joan M.; Wolfe, Douglas E.; Grasser, Tibor; Das, Saptarshi
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Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy
err2024-08-26
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PREAI
errShen, Yaqing; Zhu, Kaichen; Xiao, Yiping; Waldhoer, Dominic; Basher, Abdulrahman H.; Knobloch, Theresia; Pazos, Sebastian; Liang, Xianhu; Zheng, Wenwen; Yuan, Yue; Roldan, Juan B.; Schwingenschloegl, Udo; Tian, He; Wu, Huaqiang; Schranghamer, Thomas F.; Trainor, Nicholas; Redwing, Joan M.; Das, Saptarshi; Grasser, Tibor; Lanza, Mario
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Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs
err2024-07-14
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errOAAI
errPanarella, Luca; Kaczer, Ben; Smets, Quentin; Tyaginov, Stanislav; Canflanca, Pablo Saraza; Vici, Andrea; Verreck, Devin; Schram, Tom; Lin, Dennis; Knobloch, Theresia; Grasser, Tibor; de la Rosa, Cesar Lockhart; Kar, Gouri S.; Afanas'ev, Valeri
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Fluoride dielectrics for 2D transistors
err2024-07-08
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PREAI
errGrasser, Tibor; Waltl, Michael; Knobloch, Theresia
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All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes具有低接触电阻石墨电极的所有范德华半导体PtSe2场效应晶体管
err2024-05-24
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errOAAI
errAslam, M. Awais; Leitner, Simon; Tyagi, Shubham; Provias, Alexandros; Tkachuk, Vadym; Pavlica, Egon; Dienstleder, Martina; Knez, Daniel; Watanabe, Kenji; Taniguchi, Takashi; Yan, Dayu; Shi, Youguo; Knobloch, Theresia; Waltl, Michael; Schwingenschlogl, Udo; Grasser, Tibor; Matkovic, Aleksandar
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Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators
err2024-03-19
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errOAAI
errIllarionov, Yu. Yu.; Knobloch, T.; Uzlu, B.; Banshchikov, A. G.; Ivanov, I. A.; Sverdlov, V.; Otto, M.; Stoll, S. L.; Vexler, M. I.; Waltl, M.; Wang, Z.; Manna, B.; Neumaier, D.; Lemme, M. C.; Sokolov, N. S.; Grasser, T.
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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors
err2024-02-02
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errOAAI
errIllarionov, Yu. Yu.; Karl, A.; Smets, Q.; Kaczer, B.; Knobloch, T.; Panarella, L.; Schram, T.; Brems, S.; Cott, D.; Asselberghs, I.; Grasser, T.
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Observation of Rich Defect Dynamics in Monolayer MoS2单层MoS2中富含缺陷动力学的观察
err2023-07-25
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PREAI
errRavichandran, Harikrishnan; Knobloch, Theresia; Pannone, Andrew; Karl, Alexander; Stampfer, Bernhard; Waldhoer, Dominic; Zheng, Yikai; Sakib, Najam U.; Sadaf, Muhtasim Ul Karim; Pendurthi, Rahul; Torsi, Riccardo; Robinson, Joshua A. A.; Grasser, Tibor; Das, Saptarshi
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FinFETs based on layered 2D semiconductors
err2023-07-18
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errOAAI
errKnobloch, Theresia; Grasser, Tibor
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An ab initio study on resistance switching in hexagonal boron nitride
err2022-09-05
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errOAAI
errDucry, Fabian; Waldhoer, Dominic; Knobloch, Theresia; Csontos, Miklos; Jimenez Olalla, Nadia; Leuthold, Juerg; Grasser, Tibor; Luisier, Mathieu
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Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning通过费米能级调谐提高具有非晶栅极氧化物的二维晶体管的稳定性
err2022-06-02
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errOAAI
errKnobloch, Theresia; Uzlu, Burkay; Illarionov, Yury Yu; Wang, Zhenxing; Otto, Martin; Filipovic, Lado; Waltl, Michael; Neumaier, Daniel; Lemme, Max C.; Grasser, Tibor
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