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收藏Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors
Francois, T.; Grenouillet, L.; Coignus, J.; Vaxelaire, N.; Carabasse, C.; Aussenac, F.; Chevalliez, S.; Slesazeck, S.; Richter, C.; Chiquet, P.; Bocquet, M.; Schroeder, U.; Mikolajick, T.; Gaillard, F.; Nowak, E.
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收藏Illusion of large on-chip memory by networked computing chips for neural network inference
Radway, Robert M.; Bartolo, Andrew; Jolly, Paul C.; Khan, Zainab F.; Le, Binh Q.; Tandon, Pulkit; Wu, Tony F.; Xin, Yunfeng; Vianello, Elisa; Vivet, Pascal; Nowak, Etienne; Wong, H. -S. Philip; Aly, Mohamed M. Sabry; Beigne, Edith; Wootters, Mary; Mitra, Subhasish
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收藏Write Termination Circuits for RRAM: A Holistic Approach From Technology to Application Considerations
Levisse, Alexandre; Bocquet, Marc; Rios, Marco; Alayan, Mouhamad; Moreau, Mathieu; Nowak, Etienne; Molas, Gabriel; Vianello, Elisa; Atienza, David; Portal, Jean-Michel
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收藏Status and direction of communication technologies - SiGeBiCMOS and RFCMOS
Joseph, AJ; Harame, DL; Jagannathan, B; Coolbaugh, D; Ahlgren, D; Magerlein, J; Lanzerotti, L; Feilchenfeld, N; St Onge, S; Dunn, J; Nowak, E
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