Geonwook Yoo - Publications, H-index & Citations

Geonwook Yoo

Soongsil University

25H指数

112论文数

2.1K被引数

收录论文 43

发表时间

Effects of Dielectric Interlayer on Polarization Switching and Rectifying Characteristics in Al0.8Sc0.2N/HfO2 Ferroelectric Diodes 介电中间层对Al₀.₈Sc₀.₂N/HfO₂铁电二极管极化翻转和整流特性的影响

Micromachines

IF3

2026-07-27

OAAI

Jong Min Park; Hyeong Jun Joo; Yoojin Lim; Juno Bae; Brendan Hanrahan; Geonwook Yoo

Ferroelectric AlScN Field-Plated Vertical β-Ga₂O₃ SBD With Improved On-Resistance and Breakdown Voltage 铁电AlScN场板垂直β-Ga₂O₃肖特基势垒二极管，具有改进的导通电阻和击穿电压

IEEE Transactions on Electron Devices

IF3.2

2026-02-10

PREAI

Sisung Yoon; Hyojung Kim; Yoojin Lim; Seungyoon Oh; Jongmin Park; Geonwook Yoo

Rapid Thermal Annealing for Reduced Leakage and Enhanced Endurance of Reactive-Sputtered AlScN-Based Ferroelectric Memory Capacitors 快速热退火以降低反应磁控溅射AlScN基铁电存储电容器的漏电流并提高其耐久性

Electronics 2025, Vol. 14, Page 4353

IF2.6

2025-11-07

OAAI

Juno Bae; Yoojin Lim; Jong Min Park; Hyeong Jun Joo; Geonwook Yoo

Suppressed Negative DIBL of Ferroelectric HEMT With Gate-Align Patterned AlScN Stack 铁电HEMT器件中采用栅极对准图案化AlScN堆叠抑制负DIBL

IEEE Electron Device Letters

IF4.5

2025-07-01

PREAI

Gyuhyung Lee; Hyeong Jun Joo; Seung Yoon Oh; Geonwook Yoo

Scalable Van Der Waals Integration of III-N Devices Over 2D Materials for CMOS-Compatible Architectures 用于CMOS兼容架构的iii-n器件在2D材料上的可扩展范德华集成

ADVANCED MATERIALS

IF26.8

2025-03-11

PREAI

Lee, G; Oh, Y; Hwang, J; Hong, SW; Song, SH; Shin, KW; Lee, J; Yoon, S; Kim, DK; Kim-Lee, HJ; Kim, D; Kim, J; Shin, DC; Yu, MC; Lee, J; Park, JY; Lee, HM; Kim, SW; Na, B; Yun, S; Kim, Y; Jeong, J; Park, C; Hwang, K; Yoo, G

1.6-Inch Transparent Micro-Display with Pixel Circuit Integrated microLED Chip Array by Misalignment-Free Transfer 1.6英寸透明微显示器，带像素电路集成微发光二极管芯片阵列，无错位转移

ADVANCED MATERIALS

IF26.8

2025-01-02

PREAI

Hwang, K; Hwang, J; Kim, Y; Song, S; Kong, K; Oh, Y; Chung, D; Yu, MC; Kim, D; Park, JY; Moon, J; Kim, S; Kim, TG; Lee, G; Yeom, MJ; Kim, J; Shin, DC; Kim, DK; Hong, SW; Kim-Lee, HJ; Jeong, J; Lee, H; Yoo, G

Improved lateral figure-of-merit of heteroepitaxial α-Ga2O3 power MOSFET using ferroelectric AlScN gate stack

APPLIED PHYSICS LETTERS

IF3.6

2024-11-04

PREAI

Oh, Seungyoon; Yoon, Sisung; Lim, Yoojin; Lee, Gyuhyung; Yoo, Geonwook

Network of artificial olfactory receptors for spatiotemporal monitoring of toxic gas

SCIENCE ADVANCES

IF12.5

2024-10-18

OAAI

Baek, Yongmin; Bae, Byungjoon; Yang, Jeongyong; Cho, Wonjun; Sim, Inbo; Yoo, Geonwook; Chung, Seokhyun; Heo, Junseok; Lee, Kyusang

Manipulation of structural heterogeneity and deformation behavior in Ni-Nb-(Y, Gd) phase separating metallic glasses

MATERIALS & DESIGN

IF7.9

2024-09-01

OAAI

Ahn, H.; Kim, S. Y.; Park, T. G.; Ryu, W. H.; Yoo, G. H.; Kim, M. S.; Chang, H. J.; Park, E. S.

A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact 具有混合肖特基漏极接触的2.8 kV击穿电压 α-Ga2O3 MOSFET

MICROMACHINES

IF3

2024-01-14

OAAI

Oh, Seung Yoon; Jeong, Yeong Je; Kang, Inho; Park, Ji-Hyeon; Yeom, Min Jae; Jeon, Dae-Woo; Yoo, Geonwook

An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP2S6/GaN HEMT 基于铁电CuInP2S6/GaN HEMT的人工神经肌肉接头，用于增强反射和动眼动力学

SCIENCE ADVANCES

IF12.5

2023-09-22

OAAI

Park, Minseong; Yang, Jeong Yong; Yeom, Min Jae; Bae, Byungjoon; Baek, Yongmin; Yoo, Geonwook; Lee, Kyusang

Reconfigurable Physical Reservoir in GaN/?-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer 通过铁电2D层的平面外局部极化实现的GaN/？-In2Se3 hemt中的可重构物理储层

ACS NANO

IF16

2023-04-04

PREAI

Yang, Jeong Yong; Park, Minseong; Yeom, Min Jae; Baek, Yongmin; Yoon, Seok Chan; Jeong, Yeong Je; Oh, Seung Yoon; Lee, Kyusang; Yoo, Geonwook

Epitaxial ?-Ga2O3/GaN heterostructure for high electron-mobility transistors

MATERIALS TODAY PHYSICS

IF9.7

2023-02-01

PREAI

Kang, Ha Young; Yeom, Min Jae; Yang, Jeong Yong; Choi, Yoonho; Lee, Jaeyong; Park, Changkun; Yoo, Geonwook; Chung, Roy Byung Kyu

Wafer-scale alignment and integration of micro-light-emitting diodes using engineered van der Waals forces 使用工程范德华力对微发光二极管进行晶圆级对准和集成

NATURE ELECTRONICS

IF40.9

2023-01-30

PREAI

Hwang, Junsik; Kim-Lee, Hyun-Joon; Hong, Seog Woo; Park, Joon-Yong; Kim, Dong Kyun; Kim, Dongho; Song, Sanghoon; Jeong, Jonghyun; Kim, Yongchan; Yeom, Min Jae; Yu, Min-chul; Kim, Joosung; Park, Younghwan; Shin, Dong-Chul; Kang, Sungjin; Shin, Jai-Kwang; Kim, Yongsung; Yoon, Euijoon; Lee, Hojin; Yoo, Geonwook; Jeong, Jaewook; Hwang, Kyungwook

Vertically Stacked vdW Double Heterojunction Photodiode with Ultrawide Bandgap Gallium Oxide Electron Reservoir

ADVANCED OPTICAL MATERIALS

IF7.2

2022-07-12

PREAI

Lee, Chan Ho; Park, Youngseo; Kim, Sungkyu; Jeong, Yeong Je; Ahn, Yeong Hwan; Kim, Young Chul; Heo, Junseok; Yoo, Geonwook

Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption

SCIENTIFIC REPORTS

IF3.9

2022-03-11

OAAI

Xing, Zhang; Akter, Afroja; Kum, Hyun S.; Baek, Yongmin; Ra, Yong-Ho; Yoo, Geonwook; Lee, Kyusang; Mi, Zetian; Heo, Junseok

Supervised Multivariate Kernel Density Estimation for Enhanced Plasma Etching Endpoint Detection 用于增强等离子体蚀刻终点检测的监督多元核密度估计

IEEE ACCESS

IF3.6

2022-01-01

OAAI

Choi, Jungyu; Kim, Bobae; Im, Sungbin; Yoo, Geonwook

Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure

SCIENCE ADVANCES

IF12.5

2021-12-17

OAAI

Hwang, Aujin; Park, Minseong; Park, Youngseo; Shim, Yeongseok; Youn, Sukhyeong; Lee, Chan-Ho; Jeong, Han Beom; Jeong, Hu Young; Chang, Jiwon; Lee, Kyusang; Yoo, Geonwook; Heo, Junseok

Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric

MICROMACHINES

IF3

2021-11-25

OAAI

Yeom, Min Jae; Yang, Jeong Yong; Lee, Chan Ho; Heo, Junseok; Chung, Roy Byung Kyu; Yoo, Geonwook

Design of p-WSe2/n-Ge Heterojunctions for High-Speed Broadband Photodetectors 用于高速宽带光电探测器的p-WSe2/n-ge异质结设计

ADVANCED FUNCTIONAL MATERIALS

IF19

2021-10-07

PREAI

Lee, Chan Ho; Park, Youngseo; Youn, Sukhyeong; Yeom, Min Jae; Kum, Hyun S.; Chang, Jiwon; Heo, Junseok; Yoo, Geonwook

研究方向