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E

Elison Matioli

ecole polytechnique federale de lausanne

41H指数
170论文数
6.2K被引数
收录论文 53
发表时间
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Intrinsic polarization superjunctions in III-nitride heterostructures for efficient power electronicsIII族氮化物异质结构中的固有极化超结用于高效电力电子技术
errNature Electronics
IF40.9
err2026-08-28
err0
errOAAI
errLuca Mazzone; Yuan Zong; Hongkeng Zhu; Alessandro Mauro; Elison Matioli
err分享
err收藏
Geometric-Mean De-Embedding: A Heuristic Distributed Method for Precise Characterization of RF HEMTs几何平均去嵌：一种用于精确表征RF HEMT的启发式分布式方法
errIEEE Microwave and Wireless Technology Letters
IF3.4
err2026-05-01
err0
PREAI
errRezaei, Mohammad; Esteghamat, Amirhossein; Matioli, Elison
err分享
err收藏
Polarization Enhanced GaN SBDs With p-NiO/LiNiO Junction Termination Extensions Achieving 1 kV Breakdown Voltage极化增强型GaN肖特基势垒二极管，采用p-NiO/LiNiO结终端扩展结构实现1 kV击穿电压
errIEEE Electron Device Letters
IF4.5
err2026-04-01
err0
PREAI
errHao, Zheng; Floriduz, Alessandro; Zong, Yuan; Matioli, Elison
err分享
err收藏
High-Power Terahertz Emission from Picosecond Nano-Plasma Switching Driven by Secondary Electron Emission Avalanche皮秒纳米等离子体开关驱动二次电子发射雪崩产生的高功率太赫兹发射
errAdvanced Science
IF14.1
err2026-04-01
err0
errOAAI
errSun, Guangyu; Rezaei, Mohammad; Hu, Yuheng; Zhang, Guan-Jun; Matioli, Elison
err分享
err收藏
Ultra-High-Efficiency On-Chip CO2 Conversion by Nanosecond Self-Pulsing Micro-Plasma Devices超高效率片上CO2转化纳米秒自脉冲微等离子体器件
errCarbon Energy
IF24.2
err2026-03-06
err0
errOAAI
errGuangyu Sun; Bartu Karakurt; Hongkeng Zhu; Onder Soydal; Jeremy S. Luterbacher; Elison Matioli
err分享
err收藏
Regrowth-Free GaN RF HEMTs Achieving fmax of 403 GHz via Periodic Contact Structures通过周期性接触结构实现403 GHz fmax的无外延再生GaN RF HEMTs
errIEEE Electron Device Letters
IF4.5
err2025-11-14
err0
PREAI
errMohammad Rezaei; Hongkeng Zhu; Amirhossein Esteghamat; Elison Matioli
err分享
err收藏
Low-Power Tunable Micro-Plasma Device for Efficient and Scalable CO2 Valorization低功耗可调微等离子体器件用于高效且可扩展的CO2增值
errAdvanced Science
IF14.1
err2025-06-30
err0
errOAAI
errBartu Karakurt; Hongkeng Zhu; Onder Soydal; Guangyu Sun; Jeremy S. Luterbacher; Elison Matioli
err分享
err收藏
Soft-Switching CO Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2024-12-01
err0
PREAI
errZhu, Hongkeng; Zong, Yuan; AlNuaimee, Yassin; Codjia, Yoan; Matioli, Elison
err分享
err收藏
In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2024-08-01
err1
PREAI
errvan Erp, Remco; Perera, Nirmana; Nela, Luca; Elhagali, Ibrahim Osama; Zhu, Hongkeng; Matioli, Elison
err分享
err收藏
Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2023-07-01
err8
errOAAI
errZhu, Hongkeng; Matioli, Elison
err分享
err收藏
Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2023-03-01
err11
errOAAI
errBhadoria, Shubhangi; Dijkhuizen, Frans; Raj, Rishabh; Wang, Xiongfei; Xu, Qianwen; Matioli, Elison; Kostov, Konstantin; Nee, Hans-Peter
err分享
err收藏
Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing用于数据存储和处理的二氧化钒中玻璃状动力学的电气控制
errNATURE ELECTRONICS
IF40.9
err2022-08-22
err26
PREAI
errNikoo, Mohammad Samizadeh; Soleimanzadeh, Reza; Krammer, Anna; Marega, Guilherme Migliato; Park, Yunkyu; Son, Junwoo; Schueler, Andreas; Kis, Andras; Moll, Philip J. W.; Matioli, Elison
err分享
err收藏
Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-08-01
err0
errOAAI
errWang, Taifang; Zong, Yuan; Nela, Luca; Matioli, Elison
err分享
err收藏
Hard-Switching Losses in Power FETs: The Role of Output Capacitance
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2022-07-01
err12
errOAAI
errPerera, Nirmana; Jafari, Armin; Soleimanzadeh, Reza; Bollier, Nicolas; Abeyratne, Sunil Gamini; Matioli, Elison
err分享
err收藏
A perspective on multi-channel technology for the next-generation of GaN power devices
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-05-11
err25
errOAAI
errNela, Luca; Xiao, Ming; Zhang, Yuhao; Matioli, Elison
err分享
err收藏
A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters
errIEEE OPEN JOURNAL OF POWER ELECTRONICS
IF3.9
err2022-01-01
err5
errOAAI
errKampitsis, Georgios; Batzelis, Efstratios, I; Kolokasis, Antonis; Matioli, Elison; Pal, Bikash C.
err分享
err收藏
p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-12-29
err7
errOAAI
errNela, Luca; Erine, Catherine; Matioli, Elison
err分享
err收藏
Seed Dibbling Method for the Grow of High-Quality Diamond on GaN
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2021-08-31
err18
PREAI
errSoleimanzadeh, Reza; Naamoun, Mehdi; Floriduz, Alessandro; Khadar, Riyaz Abdul; van Erp, Remco; Matioli, Elison
err分享
err收藏
Optimized Kilowatt-Range Boost Converter Based on Impulse Rectification With 52 kW/l and 98.6% Efficiency
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2021-07-01
err8
errOAAI
errJafari, Armin; Nikoo, Mohammad Samizadeh; van Erp, Remco; Matioli, Elison
err分享
err收藏
Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K用于低至4.2 K的低温应用的GaN功率器件的性能
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2021-07-01
err47
errOAAI
errNela, Luca; Perera, Nirmana; Erine, Catherine; Matioli, Elison
err分享
err收藏

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