Zehao Lin - Publications, H-index & Citations | 科言猫

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Zehao Lin

purdue university

24H指数

91论文数

1.7K被引数

收录论文 26

发表时间

Experimental Investigation of Variations in Polycrystalline Hf_0.5Zr_0.5O₂ (HZO)-Based MFIM Hf_0.5Zr_0.5O₂ (HZO)基MFIM多晶材料的实验研究

IEEE Transactions on Electron Devices

IF3.2

2026-03-10

0

PREAI

Tae Ryong Kim; Revanth Koduru; Zehao Lin; Peide D. Ye; Sumeet Kumar Gupta

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Resonant states in the Schrödinger equation solved using the Green's function method*

Chinese Physics C

IF3.1

2026-01-31

0

PREAI

Wentao Zeng; Zehao Lin; Yiran Wang; Shuangquan Zhang; Jinniu Hu; Ying Zhang

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Contact Length Scaling in In₂O₃ and InGaZnO FETs: Critical Roles of Quantum Confinement and Indium Concentration Tuning

IEEE Transactions on Electron Devices

IF3.2

2026-01-12

0

PREAI

Jian-Yu Lin; Chang Niu; Zehao Lin; Sumi Lee; Chang Liu; Juanjuan Lu; Haiyan Wang; Peide D. Ye

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PbS Quantum Dots-Derived Gradient Interfaces Unify Doping and Strain for Enhanced Bi0.5Sb1.5Te3 Thermoelectrics PbS量子点衍生的梯度界面统一掺杂和应变以增强Bi₀.₅Sb₁.₅Te₃热电材料

Materials Today Physics

IF9.7

2025-12-06

0

PREAI

Min Ruan; Minwen Yang; Qing Cao; Wenjie Li; Yanqi Huang; Zehao Lin; Jingyi Lyu; Zeqing Hu; Jing Shuai

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Enhancing the thermoelectric performance of n-type polycrystalline SnSe with lead-free perovskite Cs2TiCl6 通过铅基钙钛矿Cs2TiCl6增强n型多晶SnSe的热电性能

J. Mater. Chem. A

IF9.5

2025-11-17

0

PREAI

Wenjie Li; Zeqing Hu; Ziwang Zhang; Zehao Lin; Min Ruan; Jiahao Jiang; Jing Shuai

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Distinguishing the Different Vth Shift Mechanisms in In2O3 TFTs Using Ultrafast On-the-Fly Reliability Measurements

IEEE ELECTRON DEVICE LETTERS

IF4.5

2025-11-01

0

PREAI

Yeh, Chien-Hung; Niu, Chang; Lin, Jian-Yu; Lin, Zehao; Liu, Chang; Lu, Juanjuan; Lee, Sumi; Wang, Haiyan; Chang, Ting-Chang; Ye, Peide D.

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Effects of Gallium on Electron Transport and Bias Stability in Ultrascaled Amorphous InGaO Transistors 镓对超缩放非晶InGaO晶体管中电子传输和偏压稳定性的影响

IEEE Transactions on Electron Devices

IF3.2

2025-08-01

0

PREAI

Jie Zhang; Changjie Zhou; Hongyi Dou; Zhuocheng Zhang; Zehao Lin; Ke Xu; Xinghang Zhang; Haiyan Wang; Huili Zhu; Weifeng Yang; Peide D. Ye

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Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium 通过自形成栅介质和金属接触实现p型和n型场效应晶体管在二维碲材料上的超低电压运行

ADVANCED MATERIALS

IF26.8

2025-04-08

0

OAAI

Niu, C; Long, LJ; Zhang, YZ; Lin, ZH; Tan, PK; Lin, JY; Wu, WZ; Wang, HY; Ye, PD

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Hypersensitive response of band gaps to strain in flexible two-dimensional Pmma SiC and GeC with high carrier mobility for simultaneous intelligent strain sensing and communication

MATERIALS TODAY COMMUNICATIONS

IF4.5

2025-03-01

0

PREAI

Lin, Zehao; Fan, Qingyang; Zhao, Ruida; Pang, Qing; Zhang, Jin Zhong; Gao, Dangli; Song, Yuling

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Efficient photoelectrocatalytic degradation of tetracycline coupled with hydrogen production by N-doped carbon layer-wrapped TiO2 nanorods 氮掺杂碳层包裹TiO2纳米棒高效光电催化降解四环素与产氢耦合研究

JOURNAL OF ENVIRONMENTAL CHEMICAL ENGINEERING

IF7.2

2025-02-01

0

PREAI

Li, Yan; Yu, Lili; Xie, Jiayang; Han, Zilong; Chen, Haotong; Zhang, Zhiyuan; Lin, Zehao; Li, Li

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The self-activated LiGa5O8 storage phosphor: insights into its photo/thermo/mechano-stimulated NIR luminescence

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2025-01-01

0

PREAI

Jia, Min; Zhang, Xiangyu; Yang, Xue; Lin, Zehao; Jia, Dingjun; Wang, Yuqiang; Yun, Sining; Gao, Dangli

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A dozen predicted SiGe alloys with low enthalpies and strong absorption of sunlight for photovoltaic applications 一打预测的SiGe合金，具有低焓和高太阳光吸收特性，适用于光伏应用

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

IF2.9

2025-01-01

0

PREAI

Lin, Zehao; Fan, Qingyang; Pang, Qing; Zhang, Jin Zhong; Song, Yuling

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Stable novel silicon allotropes in space group P2/m with various band gap structures by high-throughput screening

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2024-10-01

2

PREAI

Lin, Zehao; Fan, Qingyang; Pang, Qing; Gao, Dangli; Yun, Sining

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Wafer-Scale Atomic Layer-Deposited TeO x /Te Heterostructure P-Type Thin-Film Transistors 晶圆级原子层沉积TeO x /Te异质结构P型薄膜晶体管

IF9.1

2024-10-01

0

PREAI

Tan, Pukun; Niu, Chang; Lin, Zehao; Lin, Jian-Yu; Long, Linjia; Zhang, Yizhi; Wilk, Glen; Wang, Haiyan; Ye, Peide D.

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Review-Extremely Thin Amorphous Indium Oxide Transistors 评论-极薄非晶氧化铟晶体管

ADVANCED MATERIALS

IF26.8

2023-12-08

19

OAAI

Charnas, Adam; Zhang, Zhuocheng; Lin, Zehao; Zheng, Dongqi; Zhang, Jie; Si, Mengwei; Ye, Peide D.

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Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO2-Based Artificial Neurons 自组装Au纳米电极: 实现低阈值电压HfO2-Based的人工神经元

IF9.1

2023-10-24

3

OAAI

Dou, Hongyi; Lin, Zehao; Hu, Zedong; Tsai, Benson Kunhung; Zheng, Dongqi; Song, Jiawei; Lu, Juanjuan; Zhang, Xinghang; Jia, Quanxi; MacManus-Driscoll, Judith L.; Ye, Peide D.; Wang, Haiyan

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Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

IF16

2022-11-29

13

OAAI

Lin, Zehao; Si, Mengwei; Askarpour, Vahid; Niu, Chang; Charnas, Adam; Shang, Zhongxia; Zhang, Yizhi; Hu, Yaoqiao; Zhang, Zhuocheng; Liao, Pai-Ying; Cho, Kyeongjae; Wang, Haiyan; Lundstrom, Mark; Maassen, Jesse; Ye, Peide D.

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Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma 通过低温CF4/N2O等离子体提高电性能的氟钝化In2O3薄膜晶体管

APPLIED PHYSICS LETTERS

IF3.6

2022-10-24

17

OAAI

Zhang, Jie; Charnas, Adam; Lin, Zehao; Zheng, Dongqi; Zhang, Zhuocheng; Liao, Pai-Ying; Zemlyanov, Dmitry; Ye, Peide D.

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Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility

APPLIED PHYSICS LETTERS

IF3.6

2022-05-16

6

OAAI

Zhang, Zhuocheng; Lin, Zehao; Si, Mengwei; Zhang, Di; Dou, Hongyi; Chen, Zhizhong; Charnas, Adam; Wang, Haiyan; Ye, Peide D.

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Scaled indium oxide transistors fabricated using atomic layer deposition 使用原子层沉积制造的缩放氧化铟晶体管

NATURE ELECTRONICS

IF40.9

2022-02-21

142

OAAI

Si, Mengwei; Lin, Zehao; Chen, Zhizhong; Sun, Xing; Wang, Haiyan; Ye, Peide D.

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