Xiaoci Liang

sun yat -sen university

H指数:11

被引数:670

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Suppressing Mobility Overestimation in Electrolyte-Gated Transistors Using an AC Small-Signal Method

采用交流小信号方法抑制电解质栅极晶体管中的迁移率过估计

IEEE Electron Device Letters

IF4.5

2026-03-230

PRE

Three-Stage Defect-State Regulation in ITPO/ITO Bilayer TFTs for Simultaneously Enhanced Mobility and NBTIS Stability

IEEE Transactions on Electron Devices

IF3.2

2026-01-190

PRE

Regionally controlled ion-doping of organic electrochemical transistors for computing-memory co-integrated neuromorphic systems

区域控制的离子掺杂有机电化学晶体管，用于计算-存储集成的类脑系统

npj Flexible Electronics

IF15.5

2025-12-170

OAAI

Breaking the SS–Current Trade-Off in IGZO TFTs Using Pt Schottky Capping

IEEE Electron Device Letters

IF4.5

2025-12-090

PRE

Water-induced high-performance quantum-dot light-emitting diodes

水诱导的高性能量子点发光二极管

Nature Photonics

IF32.9

2025-09-100

PRE

Lab-on-device investigation of phase transition in MoOx semiconductors

芯片上器件对MoOx半导体相变的研究

NATURE COMMUNICATIONS

IF15.7

2025-05-230

Enhancing temperature stability of ALD-deposited IGZO thin-film transistor by optimizing composition ratio

通过优化组分比例提升原子层沉积法制备的IGZO薄膜晶体管的温度稳定性

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2025-04-010

PRE

Low Saturation Voltage and High Stability in Dual-Mode Schottky Barrier TFTs Using Bilayer IGZO

双模肖特基势垒TFTs中使用双层IGZO实现低饱和电压和高稳定性

ELECTRONICS

IF2.6

2025-03-290

Wet Etching-Based WO3 Patterning for High-Performance Neuromorphic Electrochemical Transistors

基于湿法刻蚀的WO3图案化制备高性能神经形态电化学晶体管

ELECTRONICS

IF2.6

2025-03-180

Revealing the Impact of Gel Electrolytes on the Performance of Organic Electrochemical Transistors

揭示凝胶电解质对有机电化学晶体管性能的影响

GELS

IF5.3

2025-03-140

Achieving high mobility and enhanced illumination stability in InPrO homojunction thin-film transistors

APPLIED PHYSICS LETTERS

IF3.6

2025-03-010

PRE

Quantum-Dot-Electrolyte Light-Emitting Diodes for Displays

量子点-电解质发光二极管用于显示

ADVANCED MATERIALS

IF0

2025-02-171

Understanding Quasi-Static and Dynamic Characteristics of Organic Ferroelectric Field Effect Transistors

理解有机铁电场效应晶体管的准静态和动态特性

MICROMACHINES

IF3

2024-03-290

OAAI

An Artificial Neural Network Based on Oxide Synaptic Transistor for Accurate and Robust Image Recognition

基于氧化物突触晶体管的人工神经网络，用于准确和鲁棒的图像识别

MICROMACHINES

IF3

2024-03-241

OAAI

Device Physics of Vertical Static Induction Transistors

PHYSICAL REVIEW APPLIED

IF4.4

2023-03-290

PRE

Multimode transistors and neural networks based on ion-dynamic capacitance

基于离子动态电容的多模晶体管和神经网络

NATURE ELECTRONICS

IF40.9

2022-12-0848

Temperature resistant amorphous polyimides with high intrinsic permittivity for electronic applications

CHEMICAL ENGINEERING JOURNAL

IF13.2

2022-05-0130

PRE

How Materials and Device Factors Determine the Performance: A Unified Solution for Transistors with Nontrivial Gates and Transistor-Diode Hybrid Integration

ADVANCED SCIENCE

IF14.1

2021-12-1612

OAAI

Vertical Transistors with Conductive-Network Electrodes: A Physical Image and What It Tells

PHYSICAL REVIEW APPLIED

IF4.4

2020-05-275

PREAI

Solution-processed ITO thin-film transistors with doping of gallium oxide show high on-off ratios and work at 1mV drain voltage (vol 116, 141604, 2020)

APPLIED PHYSICS LETTERS

IF3.6

2020-05-271

PREAI

Xiaoci Liang

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