David Esseni - Publications, H-index & Citations

David Esseni

university of udine

45H指数

402论文数

7.4K被引数

收录论文 20

发表时间

Readout Current in HZO-Based Bilayer FTJs: Physical Mechanisms and Design Insight HZO基双层FTJ中的读出电流：物理机制与设计见解

IEEE Transactions on Electron Devices

IF3.2

2026-03-16

OAAI

M. Segatto; F. M. Puglisi; F. Driussi; D. Lizzit; L. Carpentieri; S. Slesazeck; T. Mikolajick; D. Esseni

Operation and Design of Dirac-Source FETs Using Ab Initio Transport Simulations: Subthreshold Swing and Drive Current 基于第一性原理输运模拟的狄拉克源场效应晶体管（Dirac-Source FETs）的运行与设计：亚阈值摆幅与驱动电流

IEEE Transactions on Electron Devices

IF3.2

2025-11-24

OAAI

D. K. Nguyen; A. Pilotto; D. Lizzit; M. Pala; P. Dollfus; D. Esseni

Minimum Subthreshold Swing in DS-FETs Based on Graphene and 3D Dirac Metals 基于石墨烯和3D狄拉克金属的DS-FETs的亚阈值摆幅最小值

IEEE Electron Device Letters

IF4.5

2025-09-23

PREAI

Erica Baccichetti; Riccardo Marcon; David Esseni

Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer

IEEE ACCESS

IF3.6

2025-01-01

OAAI

Rossi, Chiara; Lizzit, Daniel; Esseni, David

Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement

NATURE ELECTRONICS

IF40.9

2024-11-04

PREAI

Shao, Yanjie; Pala, Marco; Tang, Hao; Wang, Baoming; Li, Ju; Esseni, David; del Alamo, Jesus A.

Reducing the spike rate of deep spiking neural networks based on time-encoding 基于时间编码降低深度尖峰神经网络的尖峰率

NEUROMORPHIC COMPUTING AND ENGINEERING

IF6.1

2024-07-29

OAAI

Fontanini, Riccardo; Pilotto, Alessandro; Esseni, David; Loghi, Mirko

Neuromorphic object localization using resistive memories and ultrasonic transducers

NATURE COMMUNICATIONS

IF15.7

2022-06-18

OAAI

Moro, Filippo; Hardy, Emmanuel; Fain, Bruno; Dalgaty, Thomas; Clemencon, Paul; De Pra, Alessio; Esmanhotto, Eduardo; Castellani, Niccolo; Blard, Francois; Gardien, Francois; Mesquida, Thomas; Rummens, Francois; Esseni, David; Casas, Jerome; Indiveri, Giacomo; Payvand, Melika; Vianello, Elisa

Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2-Based Ferroelectric/Dielectric Heterostructures 基于Hf0.5Zr0.5O2的多畴铁电/介电异质结构中负电容的固有性质

ADVANCED FUNCTIONAL MATERIALS

IF19

2021-10-05

OAAI

Hoffmann, Michael; Gui, Mengcheng; Slesazeck, Stefan; Fontanini, Riccardo; Segatto, Mattia; Esseni, David; Mikolajick, Thomas

Macroscopic and microscopic picture of negative capacitance operation in ferroelectric capacitors

NANOSCALE

IF5.1

2021-01-01

PREAI

Esseni, David; Fontanini, Riccardo

Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application

PHYSICAL REVIEW B

IF3.7

2020-07-08

OAAI

Pala, M. G.; Giannozzi, I. P.; Esseni, D.

Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors

APPLIED PHYSICS LETTERS

IF3.6

2020-05-19

OAAI

Khan, Asir Intisar; Khakbaz, Pedram; Brenner, Kevin A.; Smithe, Kirby K. H.; Mleczko, Michal J.; Esseni, David; Pop, Eric

Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer (vol 12, pg 6121, 2020)

NANOSCALE

IF5.1

2020-01-01

OAAI

Rollo, T.; Blanchini, F.; Giordano, G.; Specogna, R.; Esseni, D.

Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer

NANOSCALE

IF5.1

2020-01-01

OAAI

Rollo, T.; Blanchini, F.; Giordano, G.; Specogna, R.; Esseni, D.

Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

PHYSICAL REVIEW B

IF3.7

2018-03-28

PREAI

Pala, M. G.; Esseni, D.

Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors

ACS NANO

IF16

2016-11-07

125

OAAI

Smith, Anderson D.; Niklaus, Frank; Paussa, Alan; Schroeder, Stephan; Fischer, Andreas C.; Sterner, Mikael; Wagner, Stefan; Vaziri, Sam; Forsberg, Fredrik; Esseni, David; Ostling, Mikael; Lemme, Max C.

Very large strain gauges based on single layer MoSe2 and WSe2 for sensing applications

APPLIED PHYSICS LETTERS

IF3.6

2015-12-23

PREAI

Hosseini, Manouchehr; Elahi, Mohammad; Pourfath, Mahdi; Esseni, David

Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 悬浮石墨烯膜中的机电压阻传感

NANO LETTERS

IF9.1

2013-06-24

375

OAAI

Smith, A. D.; Niklaus, F.; Paussa, A.; Vaziri, S.; Fischer, A. C.; Sterner, M.; Forsberg, F.; Delin, A.; Esseni, D.; Palestri, P.; Ostling, M.; Lemme, M. C.

Design of Ultra-wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2009-05-01

PREAI

Ponton, Davide; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Tiebout, Marc; Parvais, Bertrand; Siprak, Domagoj; Knoblinger, Gerhard

Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices

PHYSICAL REVIEW B

IF3.7

2005-10-27

PREAI

Esseni, D; Palestri, P