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High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pitsAPPLIED PHYSICS LETTERSIF3.62020-10-2712OAAI
633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stressAPPLIED PHYSICS LETTERSIF3.62020-04-20125OAAI
Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodesOPTICS EXPRESSIF3.32020-04-0929OA