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Kazuhiro Ohkawa

Mie University

H指数:40

被引数:5,132

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GaN-Based Red Resonant Cavity Light-Emitting Diode up to 673 nm

GaN基红光共振腔发光二极管（波长达673 nm）

Electronics Letters

IF0.8

2026-01-170

OAAI

OFDM Four-Color Micro-LED Point-to-Point Data Link beyond 17 Gbit/s

超过17 gbit/s的OFDM四色micro-led点对点数据链路

Journal of Lightwave Technology

IF4.8

2025-12-050

PRE

Carrier Dynamics and Structural Analyses of Orange/Red In-Rich InGaN Double-Quantum Wells LED Hybridized by Blue InGaN Single-Quantum Well

载流子动力学与富铟橙/红光InGaN双量子阱LED与蓝光InGaN单量子阱的杂化结构分析

IF12.1

2025-08-030

PRE

Nanoscopic structural and optical investigations on blue InGaN single quantum wells serving as layers beneath efficient red active layers

纳米尺度结构及光学性能研究：针对作为高效红色有源层下方层的蓝色InGaN单量子阱

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-02-030

PRE

Optical properties of InGaN-based red quantum well and microcavity

IF3.3

2025-01-140

OA

Investigation of InGaN-based flexible RGB micro-light-emitting diodes and their monolithic integration

APPLIED PHYSICS LETTERS

IF3.6

2024-12-120

PRE

Local augmentation of phonon transport at GaInN/GaN heterointerface by introducing a graded variation of InN mole fraction

APPLIED PHYSICS LETTERS

IF3.6

2024-07-010

PRE

Innovative Stacked Yellow and Blue Mini-LED Chip for White Lamp Applications

IF3

2024-06-170

OAAI

Enhancing the efficiency of InGaN-based micro-LEDs using indium tin oxide p-electrodes

IF3.3

2024-06-114

OA

High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact

APPLIED PHYSICS LETTERS

IF3.6

2024-04-011

OA

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

SCIENTIFIC REPORTS

IF3.9

2024-03-254

OAAI

Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition

IF4.3

2023-12-011

OAAI

Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates

SCIENTIFIC REPORTS

IF3.9

2023-11-073

OAAI

Improvement of optical properties of InGaN-based red multiple quantum wells

IF3.3

2023-05-186

OA

Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2022-11-013

PRE

High-efficiency InGaN red micro-LEDs for visible light communication

PHOTONICS RESEARCH

IF7.2

2022-07-2851

PRE

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

JOURNAL OF LIGHTWAVE TECHNOLOGY

IF4.8

2022-07-014

PRE

Optical properties of InGaN-based red multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2022-06-2810

OA

Study on the effect of size on InGaN red micro-LEDs

SCIENTIFIC REPORTS

IF3.9

2022-01-2574

OAAI

Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN

PHOTONICS RESEARCH

IF7.2

2021-11-1524

PRE